TECHNICAL DATA
PNP SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/396
Devices Qualified Level
2N3762
2N3762L 2N3763
2N3763L 2N3764 2N3765
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N3762*
2N3764 2N3763*
2N3765 Unit
Collector-Emitter Voltage VCEO 40 60 Vdc
Collector-Base Voltage VCBO 40 60 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current IC 1.5 Adc
2N3762* 1
2N3763* 2N3764 2
2N3765
Total Power Dissipation @ TA = +250C PT 1.0 0.5 W
Operating & Storage Junction Temp. Range
Top, Tstg -55 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
2N3762*
2N3763* 2N3764
2N3765
Thermal Resistance Junction-to-Case RθJC 60 88 0C/W
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly at 5.71 mW/0C for TA > +250C
2) Derate linearly at 2.86 mW/0C for TA > +250C
TO-39* (TO-205AD)
2N3762, 2N3763
TO-5*
2N3762L, 2N3763L
TO-46* (TO-206AB)
2N3764, 2N3765
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc 2N3762, 2N3764
2N3763, 2N3765
V(BR)CEO
40
60
Vdc
Collector-Base Cutoff Current
VCB = 20 Vdc 2N3762, 2N3764
VCB = 30 Vdc 2N3763, 2N3765
VCB = 40 Vdc 2N3762, 2N3764
VCB = 60 Vdc 2N3763, 2N3765
ICBO
100
100
10
10
ηAdc
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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2N3762, L, 2N3763, L, 2N3764, 2N3765 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
Collector-Emitter Cutoff Current
VEB = 2.0 Vdc, VCE = 20 Vdc 2N3762, 2N3764
VEB = 2.0 Vdc, VCE = 30 Vdc 2N3763, 2N3765
ICEX
100
100
ηAdc
Emitter-Base Cutoff Current
VEB = 2.0 Vdc All Types
VEB = 5.0 Vdc 2N3762, 2N3764
2N3763, 2N3765
IEBO
200
10
10
ηAdc
µAdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 10 mAdc, VCE = 1.0 Vdc
IC = 150 mAdc, VCE = 1.0 Vdc
IC = 500 mAdc, VCE = 1.0 Vdc
IC = 1.0 Adc, VCE = 1.5 Vdc 2N3762, 2N3764
2N3763, 2N3765
IC = 1.5 Adc, VCE = 5.0 Vdc 2N3762, 2N3764
2N3763, 2N3765
hFE
35
40
40
30
20
30
20
140
120
80
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 150 m Adc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
IC = 1.0 Adc, IB = 100 mAdc
VCE(sat)
0.1
0.22
0.5
0.9
Vdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 150 m Adc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
IC = 1.0 Adc, IB = 100 mAdc
VBE(sat)
0.9
0.8
1.0
1.2
1.4
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz 2N3762, 2N3764
2N3763, 2N3765 hfe
1.8
1.5
6.0
6.0
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 25 pF
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 80 pF
SWITCHING CHARACTERISTICS
Delay Time VCC = 30 Vdc, VEB = 0,
td 8.0 ηs
Rise Time IC = 1.0 mAdc, IB1 = 100 mAdc tr 35 ηs
Storage Time VCC = 30 Vdc, VEB = 0,
ts 80 ηs
Fall Time IC = 1.0 mAdc, IB1 = 100 mAdc tf 35 ηs
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
