AP18N20GI RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D Simple Drive Requirement Fast Switching Characteristic BVDSS 200V RDS(ON) 170m ID G 18A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D TO-220CFM(I) S The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage 20 V ID@TC=25 Continuous Drain Current, VGS @ 10V 18 A ID@TC=100 Continuous Drain Current, VGS @ 10V 9.5 A 60 A 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation 34.7 W Linear Derating Factor 0.28 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Units 3.6 /W 65 /W 1 200805264 AP18N20GI Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage 2 Min. Typ. Max. Units VGS=0V, ID=1mA 200 - - V VGS=10V, ID=8A - - 170 m RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=10A - 9.5 - S IDSS Drain-Source Leakage Current VDS=200V, VGS=0V - - 10 uA Drain-Source Leakage Current (T j=150 C) VDS=160V, VGS=0V - - 100 uA Gate-Source Leakage VGS=20V - - 100 nA ID=10A - 19 30 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=160V - 5 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 6 - nC VDD=100V - 9 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=11A - 21 - ns td(off) Turn-off Delay Time RG=9.1,VGS=10V - 25 - ns tf Fall Time RD=9.1 - 19 - ns Ciss Input Capacitance VGS=0V - 1065 1700 pF Coss Output Capacitance VDS=25V - 185 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 3 - pF Rg Gate Resistance f=1.0MHz - 1.6 2.4 Min. Typ. - - Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions IS=10A, VGS=0V 2 Max. Units 1.3 V IS=10A, VGS=0V - 180 - ns dI/dt=100A/s - 1150 - nC Notes: 1.Pulse width limited by Max junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP18N20GI 40 30 o T C =25 C T C =150 C ID , Drain Current (A) ID , Drain Current (A) 30 16V 12 V 10 V 8.0V o 16V 12 V 10 V 8.0V V G = 6 . 0V 20 V G =6.0V 20 10 10 0 0 0.0 4.0 8.0 12.0 0.0 4.0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 12.0 16.0 20.0 Fig 2. Typical Output Characteristics 2.8 240 I D =5A T C =25 o C 220 I D =8A V G =10V 2.4 Normalized RDS(ON) 200 180 160 2.0 1.6 1.2 0.8 140 0.4 120 2 4 6 8 -50 10 V GS , Gate-to-Source Voltage (V) 0 50 100 150 T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 14 1.5 12 1.3 T j =150 o C 8 Normalized VGS(th) (V) 10 IS(A) RDS(ON) (m) 8.0 V DS , Drain-to-Source Voltage (V) T j =25 o C 6 4 1.1 0.9 0.7 2 0 0.5 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP18N20GI I D =10A 12 V DS = 100 V V DS = 130 V V DS = 160 V 1000 C iss 100 C oss C (pF) VGS , Gate to Source Voltage (V) f=1.0MHz 10000 16 8 4 10 0 1 C rss 0 4 8 12 16 20 1 24 21 Q G , Total Gate Charge (nC) 41 61 81 V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 10 Normalized Thermal Response (Rthjc) Duty factor = 0.5 ID (A) 100us 1ms 1 10ms 100ms 1s DC o T C =25 C Single Pulse 0.2 0.1 0.1 0.05 PDM t T 0.02 Duty Factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 Single Pulse 0.01 0 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) V DS ,Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 15 V DS =5V VG ID , Drain Current (A) 12 QG 10V 9 T j =150 o C T j =25 o C QGS QGD 6 3 Charge Q 0 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220CFM E A Millimeters SYMBOLS c2 L4 MIN NOM MAX A 4.30 4.70 4.90 A1 2.30 2.65 3.00 b b1 c c2 0.50 0.70 0.90 0.95 1.20 1.50 0.45 0.65 0.80 2.30 2.60 2.90 E 9.70 10.00 10.40 L 12.50 13.00 13.50 L3 2.91 3.41 3.91 L4 14.70 15.40 16.10 e ---- 3.20 ---- ---- 2.54 ---- L3 A1 b1 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. L b c e Part Marking Information & Packing : TO-220CFM LOGO 18N20GI YWWSSS Part Number Package Code meet Rohs requirement for low voltage MOSFET only Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5