Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS 30V
▼ Small Package Outline RDS(ON) 117mΩ
▼ Surface Mount Device ID2.5A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient390 ℃/W
Data and specifications subject to change without notice
200805211
1
AP2304AGN-HF
Halogen-Free Product
Parameter Rating
Drain-Source Voltage 30
Gate-Source Voltage ±20
Continuous Drain Current3, VGS @ 10V 2.5
Continuous Drain Current3, VGS @ 10V 2
Pulsed Drain Current110
Total Power Dissipation 1.38
-55 to 150
Operating Junction Temperature Range -55 to 150
Thermal Data
Parameter
Storage Temperature Range
G
D
S
D
G
S
SOT-23
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is widely used for all commercial-industrial
applications.
AP2304AGN-H
F
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=2.5A - - 117 mΩ
VGS=4.5V, ID=2A - - 190 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=2.5A - 2 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=24V ,VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=±20V - - nA
QgTotal Gate Charge2ID=2.5A - 3 5 nC
Qgs Gate-Source Charge VDS=24V - 0.8 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 1.8 - nC
td(on) Turn-on Delay Time2VDS=15V - 5 - ns
trRise Time ID=1A - 9 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 11 - ns
tfFall Time RD=15Ω-2-
ns
Ciss Input Capacitance VGS=0V - 120 190 pF
Coss Output Capacitance VDS=25V - 62 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 24 - pF
RgGate Resistance f=1.0MHz - 1.67 - Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=1.2A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2IS=2A, VGS=0V, - 24 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 23 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
±100
AP2304AGN-H
F
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
2
4
6
8
10
01234567
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC
10V
6.0V
5.0V
4.0V
VG=3.0V
0
2
4
6
8
10
01234567
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150 oC
10V
6.0V
5.0V
4.0V
VG=3.0V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 0 50 100 150
Tj , Junction Temperature (oC)
Normalized RDS(ON)
VG=10V
I
D=2.5A
0.01
0.10
1.00
10.00
0.1 0.5 0.9 1.3
VSD , Source-to-Drain Voltage (V)
IS (A)
Tj=25oCTj=150 oC
1.25
1.45
1.65
1.85
2.05
-50 0 50 100 150
Tj , Junction Temperature (oC)
VGS(th) (V)
70
80
90
100
110
120
130
140
357911
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=2A
TA=25oC
AP2304AGN-H
F
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS QGD
QG
Charge
10
100
1000
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0
2
4
6
8
10
12
0123456
QG , Total Gate Charge (nC)
VGS , Gate to Source Voltage (V)
ID=2.5A
VDS =24V
VDS =20V
VDS =15V
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Thermal Response (Rthja)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 270℃/W
tT
0.01
0.1
1
10
100
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
Single Pulse
1ms
10ms
100ms
1s
DC
