TECHNICAL DATA
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/348
Devices Qualified Level
2N3467
2N3467L 2N3468
2N3468L
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol
2N3467
2N3467L 2N3468
2N3468L Unit
Collector-Emitter Voltage VCEO 40 50 Vdc
Collector-Base Voltage VCBO 40 50 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current IC 1.0 Adc
Total Power Dissipation @ TA = +250C(1)
@ TC = +250C(2) PT 1.0
5.0 W
W
Operating & Storage Junction Temperature Range Top, Tstg -55 to +175 0C
1) Derate linearly 5.71 mW/0C for TA > +250C
2) Derate linearly 28.6 mW/0C for TC > +250C
TO-39* (TO-205AD)
2N3467, 2N3468
TO-5*
2N3467L, 2N3468L
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc 2N3467, L
2N3468, L V(BR)CBO
40
50
Vdc
Emitter-Base Breakdown Current
IE = 10 µAdc V(BR)EBO
5.0 Vdc
Collector-Emitter Breakdown Current
IC = 10 mAdc 2N3467, L
2N3468, L V(BR)CEO
40
50
Vdc
Collector-Base Cutoff Current
VCB = 30 Vdc ICBO
100 ηAdc
Collector-Emitter Cutoff Current
VEB = 3.0 Vdc, VCE = 30 ICEX 100 nAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N3467, L, 2N3468, L, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC =150 mAdc, VCE = 1.0 Vdc 2N3467, L
2N3468, L
IC = 500 mAdc, VCE = 1.0 Vdc 2N3467, L
2N3468, L
IC = 1.0 Adc, VCE = 5.0 Vdc 2N3467, L
2N3468, L
hFE
40
25
40
25
40
25
120
75
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
IC = 1.0 Adc, IB = 100 mAdc
VCE(sat)
0.35
0.6
1.2
Vdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
IC = 1.0 Adc, IB = 100 mAdc
VBE(sat)
0.8
1.0
1.2
1.6
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 25 pF
Extrapolated Unity Gain Frequency
IC = 50 mAdc, VCE = 10 Vdc, f = 100NHz
2N3467, L
2N3468, L
ft
175
150
500
500
MHz
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 100 pF
SWITCHING CHARACTERISTICS
Delay Time IC = 500 mAdc, IB1 = 50 mAdc, VEB = 2 td 10 ns
Rise Time IC = 500 mAdc, IB1 = 50 mAdc, VEB = 2 tr 30 ns
Storage Time IC = 500 mAdc, IB1 = IB2 = 50 mAdc ts 60 ns
Fall Time IC = 100 mAdc, IB1 = IB2 = 50 mAdc tf 30 ns
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
