1MBC05-060,1MBC05D-060, 1MBG05D-060 Molded IGBT 600V / 5A Molded Package Features * Small molded package * Low power loss * Soft switching with low switching surge and noise * High reliability, high ruggedness (RBSOA, SCSOA etc.) * Comprehensive line-up Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply Absolute maximum ratings (at Tc=25C unless otherwise specified) 1MBC05-060 / IGBT Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25C current Tc=100C 1ms Tc=25C Max. power dissipation(IGBT) Operating temperature Storage temperature Screw torque Symbol VCES VGES IC25 IC100 Icp PC Tj Tstg - Rating 600 20 13 5 52 50 +150 -40 to +150 40 t No de for Unit V V A A A W C C N*m nd e mm o c e r n sig w ne IGBT C:Collector G:Gate E:Emitter 1MBC05D-060, 1MBG05D-060 / IGBT+FWD Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25C current Tc=100C 1ms Tc=25C Max. power dissipation (IGBT) Max. power dissipation (FWD) Operating temperature Storage temperature Screw torque Symbol VCES VGES IC25 IC100 Icp PC PC Tj Tstg - Rating 600 20 13 5 52 50 25 +150 -40 to +150 40 . Equivalent Circuit Schematic Maximum ratings and characteristics Unit V V A A A W W C C N*m http://store.iiic.cc/ IGBT + FWD C:Collector G:Gate E:Emitter Molded IGBT 1MBC05-060, 1MBC05D-060, 1MBG05D-060 Electrical characteristics (at Tj=25C unless otherwise specified) 1MBC05-060 / IGBT Item Symbol Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Characteristics Min. Typ. ICES - - 5.5 - - - - - - - - IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf Turn-off time - - - - 400 85 15 - - - - Conditions Unit VGE=0V, VCE=600V VCE=0V, VGE=20V VCE=20V, IC=5mA VGE=15V, IC=5A VGE=0V VCE=10V f=1MHz VCC=300V IC=5A VGE=15V RG=330 ohm (Half Bridge) mA A V V pF Conditions Unit VGE=0V, VCE=600V VCE=0V, VGE=20V VCE=20V, IC=5mA VGE=15V, IC=5A VGE=0V V CE=10V f=1MHz VCC=300V, IC=5A VGE=15V RG=330 ohm (Half Bridge) IF=5A, VGE=0V IF=5A, VGE=-10V, di/dt=100A/s mA A V V pF Max. 1.0 20 8.5 3.0 - - - 1.2 0.6 1.0 0.35 s 1MBC05D-060, 1MBG05D-060 / IGBT+FWD Item Symbol Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Characteristics Min. Typ. ICES - - 5.5 - - - - - - - - - - IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr Turn-off time FWD forward on voltage Reverse recovery time 1.0 20 8.5 3.0 - - - 1.2 0.6 1.0 0.35 3.0 0.3 1MBC05-060 / IGBT Item o c e r Symbol t Rth(j-c) No Characteristics Min. Typ. - de n r o f nd e mm Thermal resistance characteristics Thermal resistance - - - - 400 85 15 - - - - - - Max. - ew Conditions . s n sig V s Unit Max. 2.50 IGBT C/W 1MBC05D-060, 1MBG05D-060 / IGBT+FWD Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Characteristics Min. Typ. - - - - Conditions Unit Max. 2.50 5.00 IGBT FWD Outline drawings, mm 1MBC05-060, 1MBC05D-060 1MBG05D-060 TO-220AB T pack-S (SMD type) http://store.iiic.cc/ C/W C/W 1MBC05-060, 1MBC05D-060, 1MBG05D-060 Molded IGBT Characteristics 1MBC05-060,1MBC05D-060,1MBG05D-060 Collector current vs. Collector-Emitter voltage Tj=125C 10 10 8 8 Collector current : Ic [A] Collector current : Ic [A] Collector current vs. Collector-Emitter voltage Tj=25C 6 4 6 4 2 2 0 0 0 1 2 3 4 5 0 Collector-Emitter voltage : VCE [V] 1 2 Collector-Emitter vs. Gate-Emitter voltage 5 Tj=125C 10 10 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] 4 Collector-Emitter vs. Gate-Emitter voltage Tj=25C 8 . de 8 n sig ew n for 6 6 nd e mm 4 2 0 0 5 ot 10 N o c e r 15 4 2 0 20 0 5 Gate-Emitter voltage : VGE [V] 10 15 20 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=300V, RG=330 ohm, VGE=15V, Tj=25C Switching time vs. Collector current Vcc=300V, RG=330 ohm, VGE=15V, Tj=125C 1000 1000 Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.] 3 Collector-Emitter voltage : VCE [V] 100 100 10 10 0 2 4 6 8 0 Collector current : Ic [A] http://store.iiic.cc/ 2 4 6 Collector current : Ic [A] 8 IGBT Module 1MBC05-060, 1MBC05D-060, 1MBG05D-060 Characteristics 1MBC05-060,1MBC05D-060,1MBG05D-060 Switching time vs. RG Vcc=300V, Ic=5A, VGE=15V, Tj=125C Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.] Switching time vs. RG Vcc=300V, Ic=5A, VGE=15V, Tj=25C 1000 100 1000 100 10 10 0 500 1000 1500 2000 2500 0 500 1000 Dynamic input characteristics 300 15 Capacitance : Cies, Coes, Cres [nF] 20 Gate-Emitter voltage : VGE [V] Collector-Emitter voltage : VCE [V] 400 10 n sig 0 10 nd e mm 5 t 5 o c e r 10 15 20 Gate charge : Qg [nC] No 0 25 . de 100 ew n for 200 0 2500 Tj=25C 1000 25 100 2000 Capacitance vs. Collector-Emitter voltage Tj=25C 500 1500 Gate resistance : RG [ohm] Gate resistance : RG [ohm] 1 0 30 5 10 15 20 25 Collector-Emitter voltage : VCE [V] 30 35 Typical short circuit capability Vcc=400V, RG=330 ohm, Tj=125C Reversed biased safe operating area < +VGE=15V, -VGE = 15V, Tj < = 125C, RG > = 330 ohm 12 80 80 60 60 40 40 20 20 8 6 4 2 0 0 100 200 300 400 500 600 700 0 5 Collector-Emitter voltage : VCE [V] 10 15 Gate voltage : VGE [V] http://store.iiic.cc/ 20 25 0 Short circuit time : tsc [s] Short circuit time current : Isc [A] Collector current : Ic [A] 10 1MBC05-060, 1MBC05D-060, 1MBG05D-060 IGBT Module Characteristics 1MBC05-060,1MBC05D-060,1MBG05D-060 Thermal resistance : Rth (j-c) [C/W] Transient thermal resistance 101 100 10-1 10-2 10-4 10-3 10-2 10-1 100 Pulse width : PW [sec.] 1MBC05D-060,1MBG05D-060 Reverse recovery current vs. Forward current -di/dt=15A / sec Reverse recovery time vs. Forward current -di/dt=15A / sec 500 1.2 300 0.8 n sig ew n for 200 0 0 2 0.6 nd e mm 100 t 4 No Forward current : IF [A] o c e r 6 . de 1.0 reverse recovery current : Irr [A] reverse recovery time : trr [nsec] 400 0.4 0.2 0 1 8 2 3 4 5 6 7 8 Forward current : IF [A] Reverse recovery time characteristics vs. -di/dt IF=5A, Tj=125C Forward current vs. Foeward voltage 500 2.5 400 2.0 300 1.5 200 1.0 100 0.5 10 Forward current : IF [A] 6 4 2 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0 Forward voltage : VF [V] 20 40 -di/dt http://store.iiic.cc/ 60 [ A / sec ] 80 100 reverse recovery current : Irr [A] reverse recovery time : trr [nsec] 8