USA/Canada:
Toll Free:
Europe:
(315) 432-89 09
(800) 544-24 14
+44 2392-232392
Model A150N50
X
4E
Features:
• RoHS Compliant
• 150 Watts
• DC – 3.0 GHz
• AlN Ceramic
• Non-Nichrome Resistive
Element
• Low VSWR
• 100% Tested
Description
The A150N50X4E is high performance Aluminum Nitride (AlN) chip
termination intended as a cost competitive alternative to Beryllium Oxide
(BeO). The termination is well suited to all cellular frequency bands such
as; AMPS, GSM, DCS, PCS, PHS and UMTS. The high power handling
makes the part ideal for terminating circulators and for use in power
combiners. The termination is also RoHS compliant!
General Specifications
Resistive Element Thick film
Substrate AlN Ceramic
Terminal Finish Matte Tin over Nickel Barrier
Operating Temperature -50 to +200°C (see de rating chart)
Tolerance is
±
0.010”, unless otherwise specified. Designed to meet of exceed
applicable portions of MIL-E-5400. All dimensions in inches.
Electrical Specifications
Resistance Value: 50 Ohms, ± 2%
Power: 150 Watts
Frequency Range: DC –3.0 GHz
Return Loss 25dB DC – 2.0 GHz
20dB DC – 3.0 GHz
Specification based on unit properly installed using suggested mounting instructions
and a 50 ohm nominal impedance. Specifications subject to change.
Outline Drawing
UNLESS OTHERWISE SPECIFIED DIMENSIONS ARE IN INCHES
1 of 2
Chip Termination
150 Watts, 50
Ω
USA/Canada:
Toll Free:
Europe:
(315) 432-8909
(800) 544-2414
+44 2392-232392
Model A150N50X4E
0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50
F
[
GHz
]
-50.00
-45.00
-40.00
-35.00
-30.00
-25.00
-20.00
-15.00
-10.00
-5.00
0.00
Return Loss (d B)
2.001.000.50
1.00
-1.00
0.50
-0.50
0.20
-0.20
0.00 0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
-170
-160
-150
-140
-130
-120 -110 -100 -90 -80 -70 -60
-50
-40
-30
-20
-10
Power De-rating: Mounting Footprint and Procedure:
*Actual performance could be limited by the solder properties of the
application
2 of 2
A150N50X4E
A
150N50X4E
Typical Performance:
