Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Schottky Barrier Diode
RB481Y-40
lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm)
Rectifying small power
lFeatures
1)Ultra small mold type. (EMD4)
2)Low VF
3)High reliability.
lConstruction lStructure
Silicon epitaxial planar
lAbsolute maximum ratings (Ta=25C)
Symbol Unit
VRM V
VRV
Io mA
IFSM A
Tj
C
Tstg
C
lElectrical characteristics (Ta=25C)
Symbol Min. Typ. Max. Unit Conditions
VF1 - - 0.3 V IF=10mA
VF2 - - 0.45 V IF=100mA
IR1 - - 20.0 μA VR=10V
IR2 - - 90.0 μA VR=40V
Storage temperature
-40 to +125
(*1) Rating of per diode:1/2 Io (*2) Rating of per diode
Parameter
Forward voltage
Reverse current
Average rectified forward current (*1)
200
Forward current surge peak (60Hz・1cyc) (*2)
1
Junction temperature
125
lTaping dimensions (Unit : mm)
Parameter
Limits
Reverse voltage (repetitive peak)
40
Reverse voltage (DC)
40
ROHM : EMD4
week code
0.13±0.05
0.5±0.05
0～0.1
(1)
(2)
(4)
(3)
0.5
0.5
1.0±0.1
0.22±0.05
1.6±0.1
1.2±0.1
1.6±0.1
1.6±0.1
1.6±0.05
EMD4
0.5
0.45
1.0
1.55
1Pin Mark
1/4
2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB481Y-40
　
1
10
100
1000
0100 200 300 400 500 600
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Ta=150°C
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
0.01
0.1
1
10
100
1000
10000
100000
010 20 30 40
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Ta=150°C
REVERSE CURRENT:IR(mA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1
10
100
010 20 30
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
f=1MHz
370
380
390
400
410
420
Ta=25
°C
I
F
=100mA
n=30pcs
AVE:397.1mV
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
0
10
20
30
40
50
60
70
80
90
100
Ta=25°C
VR=40V
n=30pcs
AVE:6.86mA
REVERSE CURRENT:VR(mA)
IR DISPERSION MAP
20
21
22
23
24
25
26
27
28
29
30
AVE:27.2pF
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
Ta=25°C
f=1MHz
VR=0V
n=10pcs
2/4 2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB481Y-40
　
0
5
10
15
20
AVE:5.60A
IFSM DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
8.3ms
IFSM
1cyc
0
5
10
15
20
AVE:6.5ns
Ta=25
°
C
IF=0.1A
IR=0.1A
Irr=0.1*IR
n=10pcs
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
0
5
10
110 100
8.3ms
IFSM
1cyc
8.3ms
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
0
5
10
110 100
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
time
IFSM
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
TIME:(s)
Rth-t CHARACTERISTICS
TRANSIENT
THERMAL IMPEDANCE:Rth (
°
C/W)
0
0.05
0.1
0.15
0.2
0.25
0.3
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4
D.C.
D=1/2
Sin(θ＝180)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pｆ CHARACTERISTICS
3/4 2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB481Y-40
　
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
010 20 30 40
D.C.
D=1/2
Sin(θ＝180)
REVERSE POWER
DISSIPATION:P
R
(w)
REVERSE VOLTAGE
：
VR(V)
VR-PR CHARACTERISTICS
0
0.1
0.2
0.3
0.4
0.5
025 50 75 100 125
D.C.
D=1/2
Sin(θ＝180)
AMBIENT TEMPERATURE：Ta(°C)
DERATING CURVE(Io-Ta)
AVERAGE RECTIFIED
FORWARD CURRENT Io(A)
T
Tj=125°C
D=t/T
t
VR
Io
VR=20V
0A
0V
0
0.1
0.2
0.3
0.4
0.5
025 50 75 100 125
D.C.
D=1/2
Sin(θ＝180)
AVERAGE RECTIFIED
FORWARD CURRENT Io(A)
CASE TEMPERATURE：Tc(°C)
DERATING CURVE(Io-Tc)
T
Tj=125°C
D=t/T
t
VR
Io
VR=20V
0A
0V
0
5
10
15
20
25
AVE:2.25kV
AVE:21.42kV
C=100pF
R=1.5kΩ
C=200pF
R=0Ω
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
4/4 2011.10 - Rev.A
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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Notes