MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES SR200AV HIGH POWER, HIGH FREQUENCY, STUD TYPE SR200AV OUTLINE DRAWING Dimensions in mm M24 x 1.5 7 ol 3| ANODE c @\F(Av) Average forward current ---+--+----+- 150A oe zk @VRAM Repetitive peak reverse voltage --- - 3500 ~ 4500V eQrR Reverse recovery charge +++--+*-400uC @ Stud type APPLICATION High-power inverters, Fly-wheel diodes in DC choppers, Power supplies as high frequency rectifiers MAXIMUM RATINGS Voltage class . Symbot Paramet Unit ymbo ameter 7 80 90 ini VARM Repetitive peak reverse voltage 3500 4000 4500 Vv VRSM Non-repetitive peak reverse voltage 3500 4000 4500 Vv VA(OC) DC reverse voltage { 2800 3200 3600 Vv Symbol Parameter Conditions Ratings Unit IF(RMS) RMS forward current 235 A IFIAV) Average forward current f = 60Hz, sine wave 9 = 180, Te = 74C 150 A \FSm Surge forward current One half cycle at 6OHz, non-repetitive 5 kA fa Current-squared, fime integration | One cycle at GOHz 1.0 x 109 Aes Tj Junction temperature 40 ~ +125 C Tstg Storage temperature ~40 ~ +150 C _ Terminal screw torque . 2.45 Nem _ Terminal mounting torque MB terminal, cathode part 13.7 Nem _ Mounting torque required M24 screw, anode part (Recommended value 49) 44.1 ~ 58.8 Nem _ Weight Standard value 535 g ELECTRICAL CHARACTERISTICS s Paramet Test conditi cits Unit ymbol arameter est conditions Min Typ Max iRRM Repetitive peak reverse current | Tj = 125C, VARM Applied _ 50 mA VEM Forward voltage Tj = 25C, IFM = 630A, Instantaneous measurement _ 7.25 v {FM = 350A, diF/dt = ~30A/us, VA = 150V, QAR Reverse recovery charge , ' SOA/HS ~ 400 uC Tj = 125C 1 Rthg-c} Thermal resistance Junction to case _ 0.09 C/W Rth(c-f) Contact thermal! resistance case to fin, greased _ _ 0.04 | Cw ae we ans ELECTRICPERFORMANCE CURVES THERMAL IMPEDANCE (C/W) FORWARD CURRENT (A) CASE TEMPERATURE (C) MAXIMUM FORWARD CHARACTERISTICS 104 4 10 0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 FORWARD VOLTAGE (V) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO CASE) 10 23 57101 0.10 0.08 0.06 0.04 0.02 0 103.23 5710823 5710-123 5710 TIME (S) ALLOWABLE CASE TEMPERATURE VS. AVERAGE FORWARD CURRENT 30 1 RESISTIVE, INDUCTIVE LOAD 120 ttt Tot SS SINGLE-PHASE SANT HALF WAVE, FULL WAVE 110 RECTIFICATION CIRCUIT K 1 100 F~; Lobe ciRculT 99 | THREE-PHASE HALF WAVE, _\ go | FULL WAVE RECTIFICATION 70 [ciRcuIT _ N 60 | 505 50. 100 150 200 250 AVERAGE FORWARD CURRENT {A) MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES POWER DISSIPATION (W) SURGE FORWARD CURRENT (kA) REVERSE RECOVERY CHARGE (yC), REVERSE RECOVERY TIME (uS) SR200AV HIGH POWER, HIGH FREQUENCY, STUD TYPE RATED SURGE FORWARD CURRENT 8 7 6 5 4 1 23 5 7 10 2030 5070100 CONDUCTION TIME {CYCLES AT 60Hz) MAXIMUM POWER DISSIPATION CHARACTERISTICS P RESISTIVE, INDUCTIVE LOAD SINGLE-PHASE HALF WAVE, FULL WAVE RECTIFICATION CIRCUIT 7 i | THREE-PHASE Li 7 HALF WAVE, yy 400 | FULL WAVE Lf RECTIFICATION 300 oncur | # 200 Je 100 800 700 600 500 DC CIRCUIT i 9 50 4100 150 200 250 AVERAGE FORWARD CURRENT (A) REVERSE RECOVERY CHARGE, REVERSE RECOVERY TIME VS. JUNCTION TEMPERATURE 1FM = 350A = ~30A/us VRM = 150V AV. = MAX. 2 5 Bi] 1EM diF/dt + A | ~ Obed rr t SYRM Irmo Orns nw an wo av ww on 3 AV. 10 10 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) oe esREVERSE RECOVERY CHARGE (uC), REVERSE RECOVERY TIME (uS) REVERSE RECOVERY CHARGE, REVERSE RECOVERY TIME VS. FORWARD CURRENT 10 5 MAX: 3 AV 2 [EM dirvdt 10 Tt 5 . aM RM = 150) trexirm . 20, QRR = 40! T= 126C 7 5 3 2 MAX. 100 O07 23 5710? 23 571083 23 57104 FORWARD CURRENT (A) MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES SR200AV HIGH POWER, HIGH FREQUENCY, STUD TYPE REVERSE RECOVERY CHARGE, REVERSE RECOVERY TIME VS. RATE OF DECREASE OF REVERSE CURRENT 103 7 bIFM = 350A 5 VAM = 150V 3 Tj = 125C MAX. no avB wo IPM die/ct fr = t VRM ~ frm Nf Qrr = terrier ar) no aw? AV. REVERSE RECOVERY CHARGE (uC), REVERSE RECOVERY TIME (uS) 400 10 23 5710' 23 57102 23 57103 RATE OF DECREASE OF REVERSE CURRENT (A/uS)