AUTOMOTIVE GRADE Features Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Dual P Channel MOSFET Dynamic dv/dt Rating 150C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified * AUIRF7342Q VDSS S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 -55V RDS(on) max. ID Top View 0.105 -3.4A SO-8 AUIRF7342Q Description Specifically designed for Automotive applications, this cellular design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base part number Package Type AUIRF7342Q SO-8 G Gate Standard Pack Form Quantity Tape and Reel 4000 D Drain S Source Orderable Part Number AUIRF7342QTR Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Max. Units VDS Symbol Drain-Source Voltage -55 V ID @ TA = 25C Continuous Drain Current, VGS @ -10V -3.4 ID @ TA = 70C IDM PD @TA = 25C Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipation -2.7 -27 2.0 PD @TA = 70C Maximum Power Dissipation Linear Dearating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp < 10s Single Pulse Avalanche Energy (Thermally Limited) Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range VGS VGSM EAS dv/dt TJ TSTG Parameter Thermal Resistance Symbol RJA Parameter Junction-to-Ambient A 1.3 0.016 20 30 114 5.0 -55 to + 150 W mW/C V mJ V/ns C Typ. Max. Units --- 62.5 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-9-30 AUIRF7342Q Static @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions -55 --- --- V VGS = 0V, ID = -250A --- -0.054 --- V/C Reference to 25C, ID = -1mA --- 0.095 0.105 VGS = -10V, ID = -3.4A --- 0.150 0.170 VGS = -4.5V, ID = -2.7A -1.0 --- -3.0 V VDS = VGS, ID = -250A 3.3 --- --- S VDS = -10V, ID = -3.1A --- --- -2.0 VDS = -55V, VGS = 0V A --- --- -25 VDS = -55V,VGS = 0V,TJ =55C --- --- -100 VGS = -20V nA --- --- 100 VGS = 20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Total Gate Charge Qg Qgs Gate-to-Source Charge Qgd Gate-to-Drain Charge td(on) Turn-On Delay Time Rise Time tr td(off) Turn-Off Delay Time Fall Time tf Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge --- --- --- --- --- --- --- --- --- --- 26 3.0 8.4 14 10 43 22 690 210 86 38 4.5 13 22 15 64 32 --- --- --- Min. Typ. Max. Units --- --- -2.0 --- --- -27 --- --- --- --- 54 85 -1.2 80 130 ID = -3.1A nC VDS = -44V VGS = -10V, See Fig.10 VDD = -28V ID = -1.0A ns RG = 6.0 RD = 16 VGS = 0V pF VDS = -25V = 1.0MHz, See Fig.9 Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = -2.0A,VGS = 0V ns TJ = 25C ,IF = -2.0A, nC di/dt = 100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) Starting TJ = 25C, L = 20mH, RG = 25, IAS = -3.4A. (See Fig. 8) ISD -3.4A, di/dt 150A/s, VDD V(BR)DSS, TJ 150C. Pulse width 300s; duty cycle 2%. When mounted on 1" square copper board , t 10sec. 2 2015-9-30 AUIRF7342Q 100 100 10 BOTTOM -3.0V 1 TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) TOP VGS -15V -12V -10V -8.0V -4.5V -4.0V -3.5V -3.0V 10 BOTTOM -3.0V 1 60s PULSE WIDTH 60s PULSE WIDTH Tj = 25C Tj = -40C 0.1 0.1 0.1 1 10 100 0.1 1000 10 100 1000 Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics 100 TOP 10 BOTTOM VGS -15V -12V -10V -8.0V -4.5V -4.0V -3.5V -3.0V -3.0V 1 60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 1000 -V DS, Drain-to-Source Voltage (V) Fig. 3 Typical Output Characteristics -I D, Drain-to-Source Current (A) 100 -ID, Drain-to-Source Current (A) 1 -V DS, Drain-to-Source Voltage (V) -V DS, Drain-to-Source Voltage (V) 3 VGS -15V -12V -10V -8.0V -4.5V -4.0V -3.5V -3.0V T J = -40C T J = 25C T J = 150C 10 1 VDS = -25V 60s PULSE WIDTH 0.1 1 2 3 4 5 6 7 -VGS, Gate-to-Source Voltage (V) Fig. 4 Typical Transfer Characteristics 2015-9-30 AUIRF7342Q RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 ID = -3.4 A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( C) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current EAS , Single Pulse Avalanche Energy (mJ) 300 ID -1.5A -2.7A BOTTOM -3.4A TOP 250 200 150 100 50 0 25 50 75 100 125 Starting T J, Junction Temperature Fig. 7 Typical On-Resistance Vs. Gate Voltage 4 150 ( C) Fig 8. Maximum Avalanche Energy Vs. Drain Current 2015-9-30 AUIRF7342Q 20 VGS Ciss Crss Coss C, Capacitance (pF) 960 = = = = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd -VGS , Gate-to-Source Voltage (V) 1200 Ciss 720 480 Coss 240 1 12 8 4 0 10 0 Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage 20 30 40 Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 -I D, Drain-to-Source Current (A) 100 -I SD, Reverse Drain Current (A) 10 Q G , Total Gate Charge (nC) 100 -VDS , Drain-to-Source Voltage (V) T J = -40C T J = 25C T J = 150C 10 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 100sec 1msec 1 10msec Tc = 25C Tj = 150C Single Pulse VGS = 0V 1.0 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -VSD , Source-to-Drain Voltage (V) Fig. 11 Typical Source-Drain Diode Forward Voltage 5 V DS = -48V V DS = -30V V DS = -12V 16 Crss 0 ID = -3.1A 1 10 100 -VDS , Drain-toSource Voltage (V) Fig. 12 Maximum Safe Operating Area 2015-9-30 AUIRF7342Q 3.5 -I D, Drain Current (A) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 T A , Ambient Temperature (C) Fig 13. Maximum Drain Current vs. Ambient Temperature Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x ZthJA + TA 0.001 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 6 2015-9-30 AUIRF7342Q SO-8 Package Outline (Dimensions are shown in millimeters (inches) D D IM B 8 6 7 6 M IN A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 B ASIC 1.27 B ASIC e1 5 H E 1 6X 2 3 0.25 [ .010] 4 A e e1 0.25 [ .010] A1 C A M AX .025 B ASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 A C 8X b M ILLIM ETERS M AX 5 A IN C H ES M IN y 0.10 [ .004] B 8X L F O O T P R IN T N O TE S : 1. D IM E N S IO N IN G & T O L E R A N C IN G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 . 2. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R 3. D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ] . 4. O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .1 5 [ . 0 0 6 ] . 6 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 [ . 0 1 0 ] . 7 D IM E N S IO N IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S TR A TE . 8X c 7 8 X 0 .7 2 [ .0 2 8 ] 6 .4 6 [ .2 5 5 ] 3 X 1 .2 7 [ .0 5 0 ] 8 X 1 .7 8 [ .0 7 0 ] SO-8 Part Marking Information 7 2015-9-30 AUIRF7342Q SO-8 Tape and Reel (Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 8 2015-9-30 AUIRF7342Q Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. SO-8 MSL1 Class M2 (+/- 200V) AEC-Q101-002 Class H1A (+/- 500V) AEC-Q101-001 Class C5 (+/- 1125V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 3/27/2014 9/30/2015 Comments Added "Logic Level Gate Drive" bullet in the features section on page 1 Updated data sheet with new IR corporate template Updated datasheet with corporate template Corrected ordering table on page 1. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. 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It is the responsibility of customer's technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 9 2015-9-30 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: International Rectifier: AUIRF7342QTR