DATE NAME
DRAWN
CHECKED
APPROVED
DWG.NO.
SPECIFICATION
Device Name :
Type Name :
Spec. No. :
Date :
H04-004-05
2SK4005-01MR
MS5F5984
MS5F5984
1 / 18
Power MOSFET
Jan.-31-2005
Fuji Electric Device Technology Co.,Ltd.
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
Jan.-31-'05
Jan.-31-'05
Jan.-31-'05
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This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
Revised Records
Date Classification
Index
Content Drawn
Checked Checked Approved
enactment
Jan.-31
2005
DWG.NO.
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
1.Scope This specifies Fuji Power MOSFET 2SK4005-01MR
2.Construction N-Channel enhancement mode power MOSFET
3.Applications for Switching
4.Outview TO-220F Outview See to 8/18 page
5.Absolute Maximum Ratings at Tc=25
C (unless otherwise specified)
Description Symbol Characteristics Unit Remarks
VDS 900 V
VDSX 900 V VGS=-30V
Continuous Drain Current IDA
Pulsed Drain Current IDP ± 24.0 A
Gate-Source Voltage VGS ± 30 V
IAR 6.0 A
EAS mJ
EAR mJ
Maximum Drain-Source dV/dt dVDS/dt kV/μs
Peak Diode Recovery dV/dt dV/dt kV/μs
Tc=25°C
2.16 Ta=25°C
Operating and Storage Tch 150
C
Temperature range Tstg -55 to +150 C
Isolation Voltage VISO kVrms
6.Electrical Characteristics at Tc=25
C (unless otherwise specified)
Static Ratings
Description Symbol Conditions min. typ. max. Unit
Drain-Source ID=250μA
Breakdown Voltage BVDSS VGS=0V 900 - - V
Gate Threshold ID=250μA
Voltage VGS(th) VDS=VGS 2.5 - 3.5 V
Zero Gate Voltage VDS=900V
VGS=0V Tch=25°C - - 25
Drain Current IDSS VDS=720V
VGS=0V Tch=125°C - - 250
Gate-Source VGS= ± 30V
Leakage Current IGSS VDS=0V - - 100 nA
Drain-Source ID=3A
On-State Resistance RDS(on) VGS=10V - 1.92 2.50 Ω
μA
Note *1
Non-Repetitive
Maximum Avalanche Energy
Note *4
40 VDS≦900V
2t=60sec
f=60Hz
WMaximum Power Dissipation PD70
Repetitive and Non-repetitive
Maximum Avalanche Current
487
Repetitive
Maximum Avalanche Energy 7.0
6.0
5
Drain-Source Voltage
Note *2
Note *3
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
Dynamic Ratings
Description Symbol Conditions min. typ. max. Unit
Forward ID=3A
Transconductance gfs VDS=25V 4.5 9.0 - S
Input Capacitance Ciss VDS=25V - 900 1350
Output Capacitance Coss VGS=0V - 100 150
Reverse Transfer f=1MHz 5.5 8.5 pF
Capacitance Crss -
td(on) Vcc=600V - 12 18
Turn-On Time tr VGS=10V - 5.6 8.4
td(off) ID=3A - 38 57 ns
Turn-Off Time tf RGS=10Ω - 11.0 17
Total Gate Charge QGVcc=450V - 25 38
Gate-Source Charge QGS ID=6A - 6.5 9.8 nC
Gate-Drain Charge QGD VGS=10V - 7.0 10.5
Reverse Diode
Description Symbol Conditions min. typ. max. Unit
Diode Forward IF=6.0A
On-Voltage VSD VGS=0V Tch=25°C - 0.86 1.30 V
Reverse Recovery IF=6.0A
Time trr VGS=0V - 1.3 - μs
Reverse Recovery -di/dt=100A/μs
Charge Qrr Tch=25°C - 8.0 - μC
7.Thermal Resistance
Description Symbol min. typ. max. Unit
Channel to Case Rth(ch-c) 1.786
C/W
Channel to Ambient Rth(ch-a) 58
C/W
Note *1 : Tch≦150°C, See Fig.1 and Fig.2
Note *2 : Starting Tch=25℃,IAS=3.0A,L=99mH,Vcc=50V,RG=50Ω,See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current.
See to the 'Maximum Avalanche Energy' graph of page 17/18.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Maximum Transient Thermal impedance' graph of page 18/18.
Note *4 : IF≦-ID,-di/dt=50A/μs,Vcc≦BVDSS,Tch≦150°C
DWG.NO.
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
Fig.1 Test circuit
Fig.2 Operating waveforms
50ΩD.U.T
L
Vcc
-15V
0
BVDSS
IDP
VGS
ID
VDS
+10V
Vcc=90V
Single Pulse Test
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
8.Reliabilitytest items
All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs).
/
10
0 method104
standards.
Test items required without fail
Humidification treatment (85±2°C,65±5%RH,168±24hr)
Heat treatment of soldering (
Solder Dipping
,
260
±
5
°
C(265
°
Cmax.),10
±
1sec,2 times)
Test Test Testing methods and Conditions Reference Sampling Acceptance
No. Items Standard number number
1 Terminal Pull force
Strength TO-220,TO-220F : 10N EIAJ
(Tensile) TO-3P,TO-3PF,TO-247 : 25N ED4701/400 15
TO-3PL : 45N method 401
T-Pack,K-Pack : 10N
Force maintaining duration :30±5sec
2 Terminal Load force
Strength TO-220,TO-220F : 5N EIAJ
(Bending) TO-3P,TO-3PF,TO-247 : 10N ED4701/400 15
TO-3PL : 15N method 401
T-Pack,K-Pack : 5N
Number of times :2times(90deg./time)
3 Mounting Screwing torque value: (M3) EIAJ (0:1)
Strength TO-220,TO-220F : 40±10N・cm ED4701/400 15
TO-3P,TO-3PF,TO-247 : 50±10N・cm method 402
TO-3PL : 70±10N・cm
4 Vibration frequency : 100Hz to 2kHz EIAJ
Acceleration : 200m/s2ED4701/400 15
Sweeping time : 4min. method 403
48min. for each X,Y&Z directions.
5 Shock Peak amplitude: 15km/s2EIAJ
Duration time : 0.5ms ED4701/400 15
3times for each X,Y&Z directions. method 404
6 Solderability Solder temp. : 2455C
Immersion time : 5
0.5sec
Each terminal shall be immersed in ----- 15
the solder bath within 1 to 1.5mm from
the body.
7 Resistance to Solder temp. : 2605CEIAJ
Soldering Heat Immersion time : 101sec ED4701/300 15
Number of times : 1times method 302
Mechanical test methodsMechanical test methods
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or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
Failure Criteria Symbols Unit
Lower Limit Upper Limit
Breakdown Voltage BVDSS LSL ----- V
Zero gate Voltage Drain-Source Current IDSS ----- USL A
Gate-Source Leakage Current IGSS ----- USL A
Gate Threshold Voltage VGS(th) LSL USL V
Drain-Source on-state Resistance RDS(on) ----- USL
Forward Transconductance gfs LSL ----- S
Diode forward on-Voltage VSD ----- USL V
Marking
Soldering ----- With eyes or Microscope -----
and other damages
* LSL : Lower Specification Limit * USL : Upper Specification Limit
* Before any of electrical characteristics measure, all testing related to the humidity
have conducted after drying the package surface for more than an hour at 150°C.
Item Failure Criteria
Electrical
Characteristics
Outview
Test Test Testing methods and Conditions Reference Sampling Acceptance
No. Items Standard number number
1 High Temp. Temperature : 150+0/-5°C EIAJ 22
Storage Test duration : 1000hr ED4701/200
method 201
2 Low Temp. Temperature : -55+5/-0°C EIAJ 22
Storage Test duration : 1000hr ED4701/200
method 202
3 Temperature Temperature : 85±2°C EIAJ
Humidity Relative humidity : 85±5% ED4701/100 22
Storage Test duration : 1000hr method 103
4 Temperature Temperature : 85±2°C EIAJ
Humidity Relative humidity : 85±5% ED4701/100 22
BIAS Bias Voltage : VDS(max) * 0.8 method 103
Test duration : 1000hr
5 Unsaturated Temperature : 130±2°C EIAJ (0:1)
Pressurized Relative humidity : 85±5% ED4701/100 22
Vapor Vapor pressure : 230kPa method 103
Test duration : 48hr
6 Temperature High temp.side : 150±5°C/30min. EIAJ
Cycle Low temp.side : -55±5°C/30min. ED4701/100 22
RT : 5°C 〜35°C/5min. method 105
Number of cycles : 100cycles
7 Thermal Shock Fluid : pure water(running water)
High temp.side : 100+0/-5°C EIAJ 22
Low temp.side : 0+5/-0°C ED4701/300
Duration time : HT 5min,LT 5min method 307
Number of cycles : 100cycles
8 Intermittent ΔTc=90degree EIAJ
Operating Tch≦Tch(max.) ED4701/100 22
Life Test duration : 3000 cycle method 106
9 HTRB Temperature : Tch=150+0/-5°C EIAJ
(Gate-source) Bias Voltage : +VGS(max) ED4701/100 22 (0:1)
Test duration : 1000hr method 101
10 HTRB Temperature : Tch=150+0/-5°C EIAJ
(Drain-Source) Bias Voltage : VDS(max)*0.8 ED4701/100 22
Test duration : 1000hr method 101
Climatic test methodsEndurance test methods
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This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
DWG.NO.
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Fuji Electric Device Technology Co.,Ltd. MS5F5984
9 / 18
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
9.Cautions
･AlthoughFujiElectric iscontinually improvingproduct qualityandreliability,asmall percentage of
semiconductorproductsmaybecomefaulty.WhenusingFujiElectricsemiconductorproductsinyour
equipment, you arerequested to take adequate safety measuresto preventthe equipmentfrom causing
physicalinjury,fire,orotherproblemin caseanyof theproductsfail. Itisrecommendedtomakeyour
design fail-safe,flameretardant,andfreeofmalfunction.
･The products describedin thisSpecificationare intendedforuseinthe followingelectronic andelectrical
equipmentwhichhasnormalreliabilityrequirements.
･Computers ･OAequipment ･Communicationsequipment(Terminaldevices)
･Machinetools ･AVequipment ･Measurementequipment
･Personalequipment ･Industrialrobots ･Electricalhomeappliances etc.
･The products describedin thisSpecificationare notdesignedormanufacturedtobeusedinequipmentor
systemsusedunderlife-threateningsituations.Ifyouareconsi
deringusing theseproductsinthe equipment
listedbelow,firstcheckthesystem constructionand requiredreliability, and take adequatesafetymeasures
suchasa backupsystem to prevent theequipmentfrom malfunctioning.
･Backbonenetworkequipment ･Transportation equipment(automobiles,trains,ships,etc.)
･Traffic-signalcontrolequipment ･Gasalarms,leakagegas auto breakers
･Submarine repeaterequipment ･Burglaralarms, fire alarms,emergency equipment
･Medicalequipment ･Nuclearcontrolequipment etc.
･DonotusetheproductsinthisSpecificationforequipment requiringstrictreliabilitysuchas(butnotlimited
to):
･Aerospaceequipment ･Aeronauticalequipment
10.Warnings
･The MOSFETs shouldbeusedinproductswithintheirabsolutemaximum rating(voltage,current,
temperature,etc.).
･The MOSFETsmaybedestroyed if used beyondthe rating.
･Weonlyguaranteethenon-repetitive andrepetitiveAvalanchecapability and notforthecontinuous
Avalanchecapability whichcan beassumedas abnormalcondition .Please notethedevicemaybe
destructedfromtheAvalancheoverthe specifiedmaximumrating.
･The equipmentcontaining MOSFETs shouldhave adequatefuses orcircuitbreakerstoprevent the
equipmentfromcausing secondarydestruction(ex. fire, explosionetc…).
･UsetheMOSFETswithintheirreliabilityandlifetimeundercertainenvironments or conditions. The
MOSFETsmay fail beforethetargetlifetimeofyourproducts ifusedundercertain reliabilityconditions.
･Becareful when handlingMOSFETsforESDdamage. (Itisanimportant consideration.)
･ When handling MOSFETs, hold them by the case (package) and don’t touch the leads and terminals.
･It isrecommended thatany handling ofMOSFETs isdoneongrounded electricallyconductivefloorand
tablemats.
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
･BeforetouchingaMOSFETterminal,Discharge anystaticelectricity from yourbodyandclothesby
groundingoutthroughahigh impedanceresistor (about1M
)
･Whensoldering,in orderto protect theMOSFETsfrom staticelectricity, groundthesolderingironor
soldering baththrough alowimpedance resistor.
･Youmust design theMOSFETstobeoperated withinthe specifiedmaximum ratings(voltage,current,
temperature,etc.) topreventpossiblefailureordestructionof devices.
･Considerthepossibletemperaturerise notonly forthechannel andcase,butalso for theouterleads.
･Do not directly touch theleadsorpackageoftheMOSFETswhilepoweris suppliedor duringoperationin
ordertoavoid electricshock and burns.
･TheMOSFETsaremadeofincombustiblematerial.However,ifaMOSFETfails,itmayemitsmoke or
flame.Also,operatingtheMOSFETsnearanyflammableplaceormaterialmaycausetheMOSFETsto
emitsmokeorflameincasethe MOSFETs becomeeven hotter duringoperation.Designthe arrangement
topreventthe spread offire.
･TheMOSFETsshouldnotused in anenvironmentinthepresenceof acid,organic matter,orcorrosive
gas(hydrogen sulfide, sulfurousacidgas etc.)
･TheMOSFETsshould not used in anirradiatedenvironmentsincetheyarenotradiation-proof.
Installation
･Solderinginvolvestemperatureswhichexceedthedevicestorage temperature rating.Toavoid device
damageand toensurereliability,observethe followingguidelinesfromthequalityassurancestandard.
Soldertemperatureand duration (through-holepackage)
Soldertemperature Duration
2605C 101 seconds
350
10
C 3.5
0.5seconds
･Theimmersiondepthof the leadshouldbasicallybeupto thelead stopper andthe distanceshouldbea
maximum of1.5mmfrom the device.
･Whenflow-soldering,be careful toavoidimmersingthepackage inthesolderbath.
･Refertothefollowingtorquereferencewhen mountingthedeviceon a heatsink.Excesstorqueapplied to
themountingscrewcauses damagetothe deviceand weak torquewill increasethethermalresistance,
bothofwhichconditionsmaydestroythedevice.
Table1:Recommendedtightening torques.
Packagestyle Screw Tighteningtorques Note
TO-220
TO-220F M3 30 –50Ncm
TO-3P
TO-3PF
TO-247 M3 40 –60Ncm
TO-3PL M3 60–80Ncm
flatness:<=±30
m
roughness:<=10m
Plane off theedges :
C<=1.0mm
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This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
･The heat sink should have a flatness within±30μm and roughness within 10μm. Also, keep the tightening
torquewithinthelimitsofthisspecification.
･Improperhandlingmaycauseisolationbreakdownleadingto acritical accident.
ex.) Over planeofftheedgesof screwhole. (Recommendedplaneoff theedgeisC<1.0mm)
･Werecommendthe useof thermal compoundtooptimize theefficiencyofheatradiation.Itisimportantto
evenlyapplythecompoundand toeliminate anyair voids.
Storage
･TheMOSFETsmustbestoredat astandardtemperatureof 5to35ｰC andrelativehumidity of 45to75%.
･Ifthestorage areaisverydry, ahumidifiermayberequired. Insuchacase,use onlydeionized wateror boiled
water,sincethechlorineintapwatermaycorrodetheleads.
･TheMOSFETs should notbesubjectedtorapidchanges intemperaturetoavoidcondensation onthesurface
of theMOSFETs.ThereforestoretheMOSFETsinaplacewherethetemperatureissteady.
･TheMOSFETs should notbestoredontopof eachother,sincethismaycauseexcessiveexternalforceonthe
case.
･TheMOSFETs shouldbestoredwiththeleadterminalsremaining unprocessed.Rustmaycausepresoldered
connectionstofailduringlaterprocessing.
･TheMOSFETs shouldbestoredin antistaticcontainersor shipping bags.
11.Appendix
･This products doesnotcontainPBBs(PolybrominatedBiphenyl)or PBDEs(Polybrominated Diphenyl Ether ),
substances.
･This products doesnotcontainClass-IODSandClass-II ODSsubstancesset forceby ‘Clean Air Act of US’
law.
･If you haveanyquestions aboutanypartof this Specification,pleasecontact Fuji
Electricoritssales agentbeforeusing theproduct.
･Neither Fujinorits agentsshallbeheldliableforanyinjurycausedby usingtheproducts
notin accordancewiththe instructions.
･Theapplicationexamplesdescribedinthisspecificationaremerelytypicaluses of Fuji
Electricproducts.
･This specificationdoes notconferany industrial propertyrights or other rights, nor
constitute alicenseforsuchrights.
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
0 25 50 75 100 125 150
0
20
40
60
80
100
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [C]
0 5 10 15 20 25 30
0
2
4
6
8
10 20V
5.5V
10V
6.0V
5.0V
4.5V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80 s pulse test,Tch=25C
VGS=4.0V
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
0.01 0.1 1 10
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C
01234567
0.01
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
0 2 4 6 8 10 12
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.5V
5.0V
RDS(on) [ ]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 s pulse test,Tch=25C
10V
20V
6.0V
4.5VVGS=4.0V
-50 -25 0 25 50 75 100 125 150
0
1
2
3
4
5
6
7
RDS(on) [ ]
Tch [C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=3A,VGS=10V
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250A
VGS(th) [V]
Tch [C]
0 5 10 15 20 25 30 35 40
0
2
4
6
8
10
12
14
16
18
20
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=6A,Tch=25C
VGS [V]
720V
450V
Vcc= 180V
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
0.00 0.25 0.50 0.75 1.00 1.25 1.50
0.1
1
10
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 s pulse test,Tch=25C
10-1 100101102103
1p
10p
100p
1n
10n
C [F]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
10-1 100101102
100
101
102
103
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t [ns]
ID [A]
0 25 50 75 100 125 150
0
100
200
300
400
500
600
IAS=3A
IAS=6A
IAS=4A
EAS [mJ]
starting Tch [C]
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=90V
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Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of Fuji
Electric Device Technology Co.,Ltd.
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25C,Vcc=90V
Avalanche Current I AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [C/W]
t [sec]