R07DS0309EJ0600 Rev.6.00 Page 1 of 7
Jan 10, 2014
Preliminary Datasheet
RQK0605JGDQA
Silicon N Channel MOS FET
Power Switching
Features
• Low on-resistance
RDS(on) = 82 mΩ typ (VGS = 10 V, ID = 1.5 A)
• Low drive current
• High speed switching
• 4.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
1. Source
2. Gate
3. Drain
S
D
G
2
1
3
1
2
3
Note: Marking is “JG”.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID 3.1 A
Drain peak current ID(Pulse) Note1 4.5 A
Body - drain diode reverse dr ain current IDR 3.1 A
Channel dissipation PchNote2 0.8 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. W hen using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
R07DS0309EJ0600
Rev.6.00
Jan 10, 2014
RQK0605JGDQA Preliminary
R07DS0309EJ0600 Rev.6.00 Page 2 of 7
Jan 10, 2014
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 μA, VDS = 0
Gate to source leak current IGSS — — ±10 μA VGS = ±16 V, VDS = 0
Drain to source leak current IDSS — — 1 μA VDS = 60 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V VDS = 10 V, ID = 1 mA
Drain to source on state resistance RDS(on) — 82 103 mΩ I
D = 1.5 A, VGS = 10 VNote3
RDS(on) — 93 131 mΩ I
D = 1.5 A, VGS = 4.5 VNote3
Forward transfer admittance |yfs| 3.6 6 — S ID = 1.5 A, VDS = 10 VNote3
Input capacitance Ciss — 405 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Output capacitance Coss — 58 — pF
Reverse transfer capacitance Crss — 23 — pF
Turn - on delay time td(on) — 14 — ns
ID = 1 A, VGS = 10 V,
RL = 10 Ω, Rg = 4.7 Ω
Rise time tr — 43 — ns
Turn - off delay time td(off) — 43 — ns
Fall time tf — 3.7 — ns
Total gate charge Qg — 6.9 — nC VDD = 10 V, VGS = 10 V,
ID = 3.1A
Gate to source charge Qgs — 0.9 — nC
Gate to drain charge Qgd — 0.8 — nC
Body - drain diode for ward voltage VDF — 0.8 — V IF = 1.5 A, VGS = 0 Note3
Notes: 3. Pulse test
RQK0605JGDQA Preliminary
R07DS0309EJ0600 Rev.6.00 Page 3 of 7
Jan 10, 2014
Main Characteristics
Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
Channel Dissipation Pch (W)
Maximum Channel Power
Dissipation Curve Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Drain Current ID (A)
Typical Output Characteristics
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics (1)
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Typical Transfer Characteristics (2)
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Gate to Source Cutoff Voltage vs.
Case Temperature
Case Temperature Tc (°C)
Gate to Source Cutoff Voltage V
GS(off) (V)
0
0.4
0.2
0.6
1.0
0.8
1.2
0 25 50 75 100 125 150
0.01
0.1
1
10
0.1 1 10 1000.01
100
2.2V
2.4 V
2.0 V
VGS = 0 V
5
10
4
8
3
6
2
4
1
2
00
0
1
2
3
4
5
012
0.0001
0.001
0.01
0.1
1 1.50 0.5 2 2.5 3
1.0
1.5
0.5
2.0
2.5
–25 0 25 50 75 100 125 150
VDS = 10 V
Pulse Test
5,7,9,10 V
–25°C
ID = 10 mA
1 mA
3 V
3
2.1 V
2.3 V
2.6V
Pulse Test
Tc = 25°C
Tc = 75°C
25°C
2.5 V VDS = 10 V
Pulse Test
1
10
Tc = 75°C
25°C
–25°C
VDS = 10 V
Pulse Test
0.1 mA
DC Operation
PW = 10 ms
1 ms
Tc = 25°C
100 μs
Operation in this area
is limited by RDS(on)
RQK0605JGDQA Preliminary
R07DS0309EJ0600 Rev.6.00 Page 4 of 7
Jan 10, 2014
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage V
DS(on)
(mV)
Static Drain to Source on State Resistance
vs. Drain Current
Drain Current I
D
(A)
Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Case Temperature
Case Temperature Tc (°C)
Drain to Source on State Resistance
R
DS(on)
(mΩ)
Static Drain to Source on State Resistance
vs. Case Temperature
Case Temperature Tc (°C)
Drain to Source on State Resistance
R
DS(on)
(mΩ)
Forward Transfer Admittance vs.
Drain Current
Drain Current I
D
(A)
Forward Transfer Admittance |yfs| (S)
Zero Gate Voltage Drain current vs.
Case Temperature
Case Temperature Tc (°C)
Zero Gate Voltage Drain current I
DSS
(nA)
0
100
200
300
400
0246810
0.5 A
1.0 A
0.1 A
Pulse Test
Tc = 25°C
0.1
0.3
1.0
0.01
0.03
0.1 10.3 3 10
–25 0 25 50 75 100 125 150
0.2 A
–25 0 25 50 75 100 125 150
0.2 A
0.1
1
10
0.1
1
10
10000
1
10
100
1000
–25 0 25 50 75 100 125 150
50
100
150
200
0.5 A
I
D
= 1.5 A
1 A
Pulse Test
V
GS
= 4.5 V
50
100
150
200
I
D
= 1.5 A
Pulse Test
V
GS
= 10 V
0.5 A
I
D
= 1.5 A
1 A
0.2 A
10 V
V
GS
= 4.5 V
100
Pulse Test
V
GS
= 0 V
V
DS
= 60 V
Pulse Test
Tc = 25°C
–25°C
25°C
Tc = 75°C
Pulse Test
V
DS
= 10 V
RQK0605JGDQA Preliminary
R07DS0309EJ0600 Rev.6.00 Page 5 of 7
Jan 10, 2014
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Gate Charge Qg (nC)
Gate to Source Voltage V
GS
(V)
Switching Characteristics
Switching Time t (ns)
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
Ciss, Coss, Crss (pF)
Input Capacitance vs.
Gate to Source Voltage
Gate to Source Voltage VGS (V)
Ciss (pF)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
Source to Drain Voltage V
SD
(V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
Case Temperature Tc (°C)
Body-Drain Diode Forward Voltage V
SDF
(V)
Drain Current I
D
(A)
02 46810
100
80
60
20
40
20
16
12
8
4
0102030405060
1
10
100
1000
10000
400
450
500
550
600
650
–10 –5 0 5 10
V
DS
= 0 V
f = 1 MHz
0 0.80.4 1.2 1.6 2.0
3
5
4
2
1
0
0.2
0.4
1.0
0.6
0.8
–25 0 25 50 75 100 125 150
I
D
= 1.5 A
Tc = 25°C
V
DD
= 10 V
V
DS
V
GS
50 V
V
DD
= 50 V
25 V
10 V
25 V
–5 V, –10 V
Pulse Test
Tc = 25°C
VGS = 5 V
10 V
1 mA
I
D
= 10 mA
V
GS
= 0
V
GS
= 0 V
f = 1 MHz
Coss
Crss
Ciss
0
0 V
001
10
100
1000
0.01 0.1 110
td(off)
td(on)
tr
tf
V
DD
= 10 V
V
GS
= 10 V
Rg = 4.7 Ω
P
W
= 5 μs
Tc = 25°C
RQK0605JGDQA Preliminary
R07DS0309EJ0600 Rev.6.00 Page 6 of 7
Jan 10, 2014
Package Dimensions
MASS (Typ) [g]
0.011
Previous CodeRENESAS Code
PLSP0003ZB-A MPAK(T) / MPAK(T)V
JEITA Package Code
SC-59A
© 2013 Renesas Electronics Corporation. All rights reserved.
D
eA
AA
b
xSA
M
EH
E
A
A
2
A
1
S
b
A-A Section
c
Qc
LL
1
L
P
A
3
A
A
1
A
2
A
3
b
c
D
E
e
H
E
L
L
1
L
P
x
Q
1.0
0
1.0
⎯
0.35
0.1
2.7
1.35
⎯
2.2
0.35
0.15
0.25
⎯
⎯
Min Nom
Dimensions in millimeters
Reference
Symbol
Max
⎯
⎯
1.1
0.25
0.4
0.16
⎯
1.5
0.95
2.8
⎯
⎯
⎯
⎯
0.3
1.3
0.1
1.2
⎯
0.5
0.26
3.1
1.65
⎯
3.0
0.75
0.55
0.65
0.05
⎯
RQK0605JGDQA Preliminary
R07DS0309EJ0600 Rev.6.00 Page 7 of 7
Jan 10, 2014
Ordering Information
Orderable Part Number Quantity Shipping Container
RQK0605JGDQATL-H 3000 pcs. φ178 mm reel, 8 mm Emboss taping
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