Preliminary Datasheet RQK0605JGDQA R07DS0309EJ0600 Rev.6.00 Jan 10, 2014 Silicon N Channel MOS FET Power Switching Features * Low on-resistance RDS(on) = 82 m typ (VGS = 10 V, ID = 1.5 A) * Low drive current * High speed switching * 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1. Source 2. Gate 3. Drain 2 1 2 S 1 Note: Marking is "JG". Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(Pulse) Note1 IDR Ratings 60 20 3.1 4.5 3.1 Unit V V A A A Pch Note2 Tch Tstg 0.8 150 -55 to +150 W C C Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) R07DS0309EJ0600 Rev.6.00 Jan 10, 2014 Page 1 of 7 RQK0605JGDQA Preliminary Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Drain to source leak current Gate to source cutoff voltage Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) Min 60 20 -- -- 1.0 Typ -- -- -- -- -- Max -- -- 10 1 2.0 Unit V V A A V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, ID = 1 mA Drain to source on state resistance RDS(on) -- 82 103 m ID = 1.5 A, VGS = 10 VNote3 RDS(on) -- 93 131 m ID = 1.5 A, VGS = 4.5 VNote3 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg 3.6 -- -- -- -- -- -- -- -- 6 405 58 23 14 43 43 3.7 6.9 -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns nC ID = 1.5 A, VDS = 10 VNote3 Gate to source charge Gate to drain charge Body - drain diode forward voltage Qgs Qgd VDF -- -- -- 0.9 0.8 0.8 -- -- -- nC nC V VDS = 10 V, VGS = 0, f = 1 MHz ID = 1 A, VGS = 10 V, RL = 10 , Rg = 4.7 VDD = 10 V, VGS = 10 V, ID = 3.1A IF = 1.5 A, VGS = 0 Note3 Notes: 3. Pulse test R07DS0309EJ0600 Rev.6.00 Jan 10, 2014 Page 2 of 7 RQK0605JGDQA Preliminary Main Characteristics Maximum Channel Power Dissipation Curve Maximum Safe Operation Area 100 0.8 10 s n 0 25 50 75 100 125 0.01 0.01 150 Ambient Temperature Ta (C) 10 100 VDS = 10 V Pulse Test 2.5 V Drain Current ID (A) 2.4 V 4 2.6V 2.3 V 3 Pulse Test Tc = 25C 2.2V 2 2.1 V 1 2.0 V 4 6 8 4 3 2 Tc = 75C 25C 1 -25C VGS = 0 V 2 1 5 5,7,9,10 V 3V 0 0.1 Typical Transfer Characteristics (1) Typical Output Characteristics 5 Tc = 25C Drain to Source Voltage VDS (V) *When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) 0 m tio ra pe 0.1 0.2 0 Drain Current ID (A) = s m PW 1 O 0.4 100 s 10 1 0.6 Operation in this area is limited by RDS(on) C Drain Current ID (A) 1.0 D Channel Dissipation Pch (W) 1.2 0 10 0 Drain to Source Voltage VDS (V) 1 2 3 Gate to Source Voltage VGS (V) 10 Drain Current ID (A) VDS = 10 V Pulse Test 1 Tc = 75C 0.1 25C 0.01 -25C 0.001 0.0001 0 0.5 1 1.5 2 2.5 Gate to Source Voltage VGS (V) R07DS0309EJ0600 Rev.6.00 Jan 10, 2014 3 Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Typical Transfer Characteristics (2) Case Temperature 2.5 VDS = 10 V Pulse Test 2.0 1.5 ID = 10 mA 1 mA 1.0 0.1 mA 0.5 -25 0 25 50 75 100 125 150 Case Temperature Tc (C) Page 3 of 7 Preliminary Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test Tc = 25C 300 ID = 1.5 A 200 1.0 A 0.5 A 100 0.2 A 0.1 A 0 0 2 4 6 8 10 1.0 Drain to Source on State Resistance RDS(on) () 400 Static Drain to Source on State Resistance vs. Drain Current Pulse Test Tc = 25C 0.3 VGS = 4.5 V 0.1 10 V 0.03 0.01 0.1 0.3 1 3 10 Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature Static Drain to Source on State Resistance vs. Case Temperature Drain to Source on State Resistance RDS(on) (m) Gate to Source Voltage VGS (V) 200 Pulse Test VGS = 4.5 V ID = 1.5 A 1A 150 0.5 A 0.2 A 100 50 -25 0 25 50 75 100 125 150 200 Pulse Test VGS = 10 V 150 ID = 1.5 A 1A 100 0.5 A 0.2 A 50 -25 0 25 50 75 100 125 150 Case Temperature Tc (C) Case Temperature Tc (C) Forward Transfer Admittance vs. Drain Current Zero Gate Voltage Drain current vs. Case Temperature 100 Pulse Test VDS = 10 V -25C 10 25C Tc = 75C 1 0.1 0.1 1 Drain Current ID (A) R07DS0309EJ0600 Rev.6.00 Jan 10, 2014 10 Zero Gate Voltage Drain current IDSS (nA) Forward Transfer Admittance |yfs| (S) Drain to Source on State Resistance RDS(on) (m) Drain to Source Saturation Voltage VDS(on) (mV) RQK0605JGDQA 10000 Pulse Test VGS = 0 V VDS = 60 V 1000 100 10 1 -25 0 25 50 75 100 125 150 Case Temperature Tc (C) Page 4 of 7 RQK0605JGDQA Preliminary Switching Characteristics 20 ID = 1.5 A Tc = 25C 80 16 VDD = 10 V 25 V 60 50 V VDS 12 VGS VDD = 50 V 40 8 25 V 20 4 10 V 0 0 2 4 6 0 10 8 1000 Switching Time t (ns) 100 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Dynamic Input Characteristics tf 100 td(on) 10 tr 1 0.01 10 1 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Input Capacitance vs. Gate to Source Voltage 650 VDS = 0 V f = 1 MHz VGS = 0 V f = 1 MHz 600 1000 Ciss (pF) Ciss 100 Coss 10 Crss 1 0 10 20 30 40 50 500 400 -10 60 -5 0 5 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Reverse Drain Current vs. Source to Drain Voltage Body-Drain Diode Forward Voltage vs. Case Temperature 5 Pulse Test Tc = 25C 4 VGS = 5 V 3 10 V 2 0V 1 -5 V, -10 V 0 550 450 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) R07DS0309EJ0600 Rev.6.00 Jan 10, 2014 Body-Drain Diode Forward Voltage VSDF (V) Ciss, Coss, Crss (pF) 0.1 Gate Charge Qg (nC) 10000 Reverse Drain Current IDR (A) VDD = 10 V VGS = 10 V Rg = 4.7 PW = 5 s Tc = 25C td(off) 1.0 VGS = 0 0.8 0.6 ID = 10 mA 0.4 1 mA 0.2 0 -25 0 25 50 75 100 125 150 Case Temperature Tc (C) Page 5 of 7 RQK0605JGDQA Preliminary Package Dimensions JEITA Package Code RENESAS Code Previous Code MASS (Typ) [g] SC-59A PLSP0003ZB-A MPAK(T) / MPAK(T)V 0.011 D A Q e E HE L A c LP L1 A3 A x M S A b A2 A A1 S b Reference Dimensions in millimeters Symbol Min Nom Max c A-A Section A A1 A2 A3 b c D E e HE L L1 LP x Q 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 1.1 0.25 0.4 0.16 1.5 0.95 2.8 0.3 1.3 0.1 1.2 0.5 0.26 3.1 1.65 3.0 0.75 0.55 0.65 0.05 (c) 2013 Renesas Electronics Corporation. All rights reserved. R07DS0309EJ0600 Rev.6.00 Jan 10, 2014 Page 6 of 7 RQK0605JGDQA Preliminary Ordering Information Orderable Part Number Quantity RQK0605JGDQATL-H 3000 pcs. R07DS0309EJ0600 Rev.6.00 Jan 10, 2014 Shipping Container 178 mm reel, 8 mm Emboss taping Page 7 of 7 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. 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