TSM1N80
800V N-Channel MOSFET
1/9
Version: A10
TO
-
92
SOT
-
223
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω) I
D
(A)
800 21.6 @ V
GS
=10V 0.15
General Description
The TSM1N80 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a
fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters
and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage
transients.
Features
● R
DS(ON)
=18Ω(Typ.) @ V
GS
=10V, I
D
=0.15A
● Low gate charge @ 5nC (Typ.)
● Low Crss @ 2.7pF (Typ.)
● Fast switching
Ordering Information
Part No. Package
Packing
TSM1N80SCT B0 TO-92 1Kpcs / Bulk
TSM1N80SCT A3
TO-92 2Kpcs / Ammo
TSM1N80CW RP SOT-223
2.5kpcs / 13” Reel
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
800 V
Gate-Source Voltage V
GS
±30 V
Continuous Drain Current I
D
0.3 A
Pulsed Drain Current (Note 1) I
DM
1 A
Single Pulse Avalanche Energy (Note 2) E
AS
90 mJ
Avalanche Current, Repetitive or Not-Repetitive (Note 1) I
AR
1 A
Total Power Dissipation @T
C
= 25
o
C TO-92 P
DTOT
3 W
SOT-223 2.1
Operating Junction and Storage Temperature Range T
J
, T
STG
-55 to +150
o
C
Lead Temperature (1/8” from case) T
L
10 S
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance - Junction to Ambient TO-92 RӨ
JA
130
o
C/W
SOT-223 60
Notes: Surface mounted on FR4 board t ≤ 10sec
Block Diagram
N-Channel MOSFET
Pin
Definition
:
1. Gate
2. Drain
3. Source
TSM1N80
800V N-Channel MOSFET
2/9
Version: A10
Electrical Specifications
(Ta=25
o
C, unless otherwise noted)
Parameter Conditions Symbol
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 1mA BV
DSS
800 -- -- V
Drain-Source On-State Resistance V
GS
= 10V, I
D
= 0.15A R
DS(ON)
-- 18 21.6 Ω
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250uA V
GS(TH)
3 -- 5 V
Zero Gate Voltage Drain Current V
DS
= 800V, V
GS
= 0V I
DSS
-- -- 25 uA
Gate Body Leakage V
GS
= ±30V, V
DS
= 0V I
GSS
-- -- ±10 uA
Forward Transconductance V
DS
=40V, I
D
= 0.1A g
fs
-- 0.36 -- S
Diode Forward Voltage I
S
= 0.2A, V
GS
= 0V V
SD
-- -- 1.4 V
Dynamic
b
Total Gate Charge V
DS
= 640V, I
D
= 0.3A,
V
GS
= 10V
Q
g
-- 5 6
nC
Gate-Source Charge Q
gs
-- 1 --
Gate-Drain Charge Q
gd
-- 2 --
Input Capacitance V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 155 200
pF
Output Capacitance C
oss
-- 20 26
Reverse Transfer Capacitance C
rss
-- 2.7 4
Switching
c
Turn-On Delay Time V
GS
= 10V, I
D
= 0.3A,
V
DS
= 400V, R
G
= 25Ω
t
d(on)
-- 10 30
nS
Turn-On Rise Time t
r
-- 20 50
Turn-Off Delay Time t
d(off)
-- 16 45
Turn-Off Fall Time t
f
-- 25 60
Note 1: Pulse test: pulse width <=300uS, duty cycle <=2%
Note 2: (V
DD
= 50V, I
AS
=0.8A, L=170mH, R
G
=25Ω)
Note 3: For design reference only, not subject to production testing.
Note 4: Switching time is essentially independent of operating temperature.
TSM1N80
800V N-Channel MOSFET
3/9
Version: A10
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
TSM1N80
800V N-Channel MOSFET
4/9
Version: A10
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Maximum Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
TSM1N80
800V N-Channel MOSFET
5/9
Version: A10
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
E
AS
Test Circuit & Waveform
TSM1N80
800V N-Channel MOSFET
6/9
Version: A10
Diode Reverse Recovery Time Test Circuit & Waveform
TSM1N80
800V N-Channel MOSFET
7/9
Version: A10
TO-92 Mechanical Drawing
Marking Diagram
Y
= Year Code
M
= Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L
= Lot Code
TO-92 DIMENSION
DIM
MILLIMETERS INCHES
MIN MAX MIN MAX
A 4.30 4.70 0.169 0.185
B 4.30 4.70 0.169 0.185
C 13.53 (typ) 0.532 (typ)
D 0.39 0.49 0.015 0.019
E 1.18 1.28 0.046 0.050
F 3.30 3.70 0.130 0.146
G 1.27 1.31 0.050 0.051
H 0.33 0.43 0.013 0.017
TSM1N80
800V N-Channel MOSFET
8/9
Version: A10
SOT-223 Mechanical Drawing
Marking Diagram
Y
= Year Code
M
= Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L
= Lot Code
SOT-223 DIMENSION
DIM
MILLIMETERS INCHES
MIN MAX MIN MAX
A 6.350 6.850 0.250 0.270
B 2.900 3.100 0.114 0.122
C 3.450 3.750 0.136 0.148
D 0.595 0.635 0.023 0.025
E 4.550 4.650 0.179 0.183
F 2.250 2.350 0.088 0.093
G 0.835 1.035 0.032 0.041
H 6.700 7.300 0.263 0.287
I 0.250 0.355 0.010 0.014
J 10° 16° 10° 16°
K 1.550 1.800 0.061 0.071
TSM1N80
800V N-Channel MOSFET
9/9
Version: A10
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
