1
GaAs Flip Chip Schottky Barrier Diodes
M/A-COM Products
Rev. V7
MA4E1317, MA4E1318, MA4E1319-1,
MA4E1319-2, MA4E2160
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
Features
• Low Series Resistance
• Low Capacitance
• High Cutoff Frequency
• Silicon Nitride Passivation
• Polyimide Scratch Protection
• Designed for Easy Circuit Insertion
Description and Applications
M/A-COM's MA4E1317 single, MA4E1318 anti-
parallel pair, MA4E1319-1 reverse tee,
MA4E1319-2 series tee and MA4E2160 uncon-
nected anti-parallel pair are gallium arsenide flip
chip Schottky barrier diodes. These devices are
fabricated on OMCVD epitaxial wafers using a
process designed for high device uniformity and
extremely low parasitics. The diodes are fully
passivated with silicon nitride and have an addi-
tional layer of polyimide for scratch protection.
The protective coatings prevent damage to the
junction during automated or manual handling.
The flip chip configuration is suitable for pick
and place insertion. The high cutoff frequency
of these diodes allows use through millimeter
wave frequencies. Typical applications include
single and double balanced mixers in PCN
transceivers and radios, police radar detectors,
and automotive radar detectors. The devices
can be used through 80 GHz.
The MA4E1318 anti-parallel pair is designed for
use in sub harmonically pumped mixers. Close
matching of the diode characteristics results in
high LO suppression at the RF input.
MA4E1317
MA4E1318
MA4E1319-1
MA4E1319-2
MA4E2160
2
GaAs Flip Chip Schottky Barrier Diodes
M/A-COM Products
Rev. V7
MA4E1317, MA4E1318, MA4E1319-1,
MA4E1319-2, MA4E2160
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
Electrical Specifications @ + 25 °C
Parameters and Test Conditions Symbol Units MA4E1317 MA4E1318
Min. Typ. Max. Min. Typ. Max.
Junction Capacitance at 0V at 1 MHz Cj pF .020 .0203
Total Capacitance at 0V at 1 MHz1 Ct pF .030 .045 .060 .0303 .0453 .0603
Junction Capacitance Difference DCj pF .005 .010
Series Resistance at +10mA2 Rs Ohms 4 7 4 7
Forward Voltage at +1mA Vf1 Volts .60 .70 .80 .60 .70 .80
Forward Voltage Difference at 1mA DVf Volts .005 .010
Reverse Breakdown Voltage at -10uA Vbr Volts 4.5 7
SSB Noise Figure NF dB 6.54 6.54
Parameters and Test Conditions Symbol Units MA4E1319-1 or -2 MA4E2160
Min. Typ. Max. Min. Typ. Max.
Junction Capacitance at 0V at 1 MHz Cj pF .0203 .0203
Total Capacitance at 0V at 1 MHz1 Ct pF .0303 .0453 .0603 .0303 .0453 .0603
Junction Capacitance Difference DCj pF .005 .010 .005 .010
Series Resistance at +10mA2 Rs Ohms 4 7 4 7
Forward Voltage at +1mA Vf1 Volts .60 .70 .80 .60 .70 .80
Forward Voltage Difference at 1mA DVf Volts .005 .010 .005 .010
Reverse Breakdown Voltage at -10uA Vbr Volts 4.5 7 4.5 7
SSB Noise Figure NF dB 6.54 6.54
Notes:
1. Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp.
2. Series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 ohms.
3. Capacitance for the MA4E1318, MA4E2160, MA4E1319-1 or -2 is per Schottky diode.
4. Measured at an LO frequency of 9.375 GHz, with an IF frequency of 300 MHz. LO drive level is +6 dBM for a single Schottk y junc-
tion. The IF noise figure contribution (1.5 dB) is included.
3
GaAs Flip Chip Schottky Barrier Diodes
M/A-COM Products
Rev. V7
MA4E1317, MA4E1318, MA4E1319-1,
MA4E1319-2, MA4E2160
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
Absolute Maximum Ratings 1
Parameter Absolute Maximum
Operating Temperature -65 °C to +125 °C
Storage Temperature -65 °C to +150 °C
Incident LO Power +20 dBm
Incident RF Power +20 dBm .
Mounting Temperature +235°C for 10 seconds
Electrostatic Discharge ( ESD ) Classification 2 Class 0
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Human Body Model
Forward Current vs Temperature
0.00
0.01
0.10
1.00
10.00
100.00
0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00
Forward V oltage (V)
Forward Current (mA)
- 50°C
+125°C 25°C
4
GaAs Flip Chip Schottky Barrier Diodes
M/A-COM Products
Rev. V7
MA4E1317, MA4E1318, MA4E1319-1,
MA4E1319-2, MA4E2160
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
Mounting Techniques
These chips were designed to be inserted onto hard or soft substrates with the junction side down. They can be
mounted with conductive epoxy or with a low temperature solder preform. The die can also be assembled with
the junction side up, and wi re or ribbon bonds made to the pads.
Solder Die Attach:
Solder which does not scavenge gold, such as Indalloy # 2, is recommended. Sn-Pb based solders are not rec-
ommended due to solder embrittlement. Do not expose die to a temperature greater than 235°C, or greater than
200°C for longer than 10 second s. No more than three seconds of scrubbing should be required for attach ment.
Epoxy Die Attach:
Assembly can be preheated to 125 - 150°C. Use a minimum amount of epoxy. Cure epoxy as per manufac-
turer’s schedule. For extended cure time s, temperatures should be kept below 200°C.
Handling Procedures
The following precautions sho uld be observed to avoid damaging these chips:
Cleanliness: The chips should b e han dled in a clean environment.
Do not attempt to clean die after installation.
Static Sensitivity: Schottky barrier diodes are ESD sensitive and can be damaged by static
electricity. Proper ESD te chniques should be used whe n handling these devices.
General Handling: The protective polymer coating on the active areas of these die pro v ides scratch
protection, particularly for the metal air bridge which conta cts the anode. Die can
be handled with tweezers or vacuum pickups and are suitable for use with
automatic pick-and-place equipment.
GaAs Flip Chip Ordering Information
Part Number Package Standard Quantity per Carrier
MA4E1317 Die in Carrier 100
MADS-001317-1278HP Pocket Tape on Reel 3000
MA4E1318 Wafer on Frame 100
MADS-001318-1197HP Pocket Tape on Reel 3000
MA4E1319-1 Die in Carrier 100
MA4E1319-2 Die in Carrier 100
MA4E2160 Die in Carrier 100
5
GaAs Flip Chip Schottky Barrier Diodes
M/A-COM Products
Rev. V7
MA4E1317, MA4E1318, MA4E1319-1,
MA4E1319-2, MA4E2160
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
Flip Chip Outline Drawings
F
G
E
D
C
B
A
MAX.
MIN.
MAX.MIN. MILLIMETERS
INCHES
DIM.
0.013
0.026
0.008
0.007
0.016
0.004
0.006
0.014
0.027
0.009
0.008
0.017
0.006
0.007
0.335
0.685
0.228
0.203
0.430
0.152
0.177
0.330
0.660
0.203
0.101
0.152
H0.0075 0.0085 0.190 0.216
H
MA4E1317
Case Style 1278
E
B
A
D
F
G
C
0.177
0.406
ALIGNMENT INDICATOR (2 PLCS)
TYP
TYP
SQ
TYP
F
G
E
D
C
B
A
MAX.
MIN.
MAX.MIN. MILLIMETERS
INCHES
DIM.
.025
.012
.006
.018
.0075
.003
.004
.027
.015
.008
.020
.0085
.005
.006
.69
.37
.20
.50
.216
.13
.15
.64
.32
.15
.45
.190
.08
.10
TYP
D
G
A
B
C
MA4E1318
Case Style 1197
E
F
6
GaAs Flip Chip Schottky Barrier Diodes
M/A-COM Products
Rev. V7
MA4E1317, MA4E1318, MA4E1319-1,
MA4E1319-2, MA4E2160
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
Flip Chip Outline Drawings
TYP
SQ.
TYP
TYP
.10
.08
.08
.33
.190
.45
.68
.15
.13
.13
.38
.216
.50
.73
.006
.005
.005
.015
.0085
.020
.029
.004
.003
.003
.013
.0075
.018
.027
DIM. INCHES MILLIMETERS
MIN. MAX. MIN. MAX.
A
B
C
D
E
G
F
ALIGNMENT INDICATOR (3 PLCS)
C
A
B
GMA4E1319-1
Case Style 1199
F
E
D
7
GaAs Flip Chip Schottky Barrier Diodes
M/A-COM Products
Rev. V7
MA4E1317, MA4E1318, MA4E1319-1,
MA4E1319-2, MA4E2160
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
Flip Chip Outline Drawings
