SMD Fast Reco ver y Rect ifiers
Reverse Voltage: 50 to 1000 Volts
Forward Current: 1.0 Amp
RoHS Device
Page 1
REV:A
Features
-Ideal for surface mount applications.
-Easy pick and place.
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
-Fast recovery time: 150~500nS.
-Low leakage current.
Mechanical data
-Case: JEDEC DO-214AC, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.063 grams
CFRA101-G Thru. CFRA107-G
Maximum Ratings and Electrical Characteristics
Dimensions in inches and (millimeter)
DO-214AC (SMA)
QW-BF001
CFRA
101-G
2 2
Notes: 1. Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 0.2×0.2 inch (5.0×5.0 mm )copper pad area.
SMD Diodes Specialist
COMCHIP
Comchip Technology CO., LTD.
0.110(2.79)
0.086(2.18)
0.067(1.70)
0.051(1.29)
0.209(5.31)
0.185(4.70) 0.012(0.31)
0.006(0.15)
0.008(0.20)
0.004(0.10)
0.059(1.50)
0.035(0.89)
0.091(2.31)
0.067(1.70)
0.180(4.57)
0.160(4.06)
Max. repetitive peak reverse voltage
Max. DC blocking voltage
Max. RMS voltage
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
Max. average forward current
Max. instantaneous forward voltage at
1.0A
Reverse recovery time
O
Max. DC reverse current at TA=25 C
O
rated DC blocking voltage TA=125 C
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
CFRA
102-G
CFRA
103-G
CFRA
104-G
CFRA
105-G UnitsSymbolParameter
VRRM
VDC
VRMS
IFSM
IO
VF
Trr
IR
RθJA
TJ
TSTG
50
50
35
100
100
70
200
200
140
400
400
280
30
1.0
1.3
5.0
200
42
150
-55 to +150
600
600
420
250
V
V
V
A
A
V
nS
μA
OC/W
OC
OC
CFRA
106-G
CFRA
107-G
800
800
560
1000
1000
700
150 500
QW-BF001
RATING AND CHARACTERISTIC CURVES (CFRA101-G thru CFRA107-G)
Percent of Rated Peak Reverse Voltage (%)
1401208060200
Fig.1 Reverse Characteristics
0.1
1
10
100
1000
Rever e urr n(μ )
s C e t A
Forward Voltage (V)
0.4
Fig.2 Forward Characteristics
0.01
o w rd C rren (A)
F r a ut
0.1
1
10
100
1.2
Reverse Voltage (V)
0.01
Fig.3 Junction Capacitance
0
Jn ti n apaci ance (p )
u c o C t F
5
15
30
35
0.1 1 10 100
Number of Cycles at 60Hz
Fig.4 Non-repetitive Forward Surge Current
0
Peak Forward Surge Current A)
(
20
30
50
Reverse Voltage (V)
1
Fig.5-Typical Junction Capacitance
1.0
Capac ta c ( Fi n e p )
O
TJ=25 C
f=1MHz
10 100
10
100
SMD Diodes Specialist
COMCHIP
Comchip Technology CO., LTD.
Page 2
REV:A
0.8 1.6 2.42.0
10
20
25
O
TJ=25 C
f=1MHz and applied
4VDC reverse voltage
1 10 100
10
40
O
TJ=25 C
8.3ms single half sine
wave, JEDEC method
Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics
50Ω
NONINDUCTIVE
10Ω
NONINDUCTIVE
(+)
25Vdc
(approx.)
(-)
D.U.T.
1Ω
NON-
INDUCTIVE
OSCILLLISCOPE
(NOTE 1)
PULSE
GENERATO R
(NOTE 2)
(+)
(-)
NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF.
2. Rise time=10ns max., input impedance=50Ω.
trr
Set time base for
50 / 10nS / cm
1cm
-1.0A
-0.25A
0
+0.5A
Fig.6 Current Derating Curve
O
Ambient Temperature ( C)
Average Forward Current (A)
0 5025 75 100 150125 175
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Single phase
Half wave 60Hz
SMD Fast Reco ver y Rect ifiers
40 100
O
TJ=125 C
O
TJ=25 C O
TJ=25 C
Pulse width 300μS
4% duty cycle
