AOD413A 40V P-Channel MOSFET General Description Features The AOD413A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. VDS (V) = -40V (VGS = -10V) ID = -12A RDS(ON) < 44m (VGS = -10V) RDS(ON) < 66m (VGS = -4.5V) 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D Bottom View D D G S G S S G Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25C Continuous Drain Current B,H Pulsed Drain Current TC=100C Avalanche Current C Power Dissipation B C 20 V TA=70C Alpha & Omega Semiconductor, Ltd. IDM -30 IAR -20 mJ 20 25 W 2.5 1.6 -55 to 175 TJ, TSTG Symbol t 10s Steady-State Steady-State A 50 PDSM Junction and Storage Temperature Range Maximum Junction-to-Case F -12 PD TC=100C Thermal Characteristics Parameter A,G Maximum Junction-to-Ambient A,G Maximum Junction-to-Ambient ID EAR TA=25C Power Dissipation A Units V -12 C Repetitive avalanche energy L=0.1mH TC=25C Maximum -40 RJA RJC Typ 16.7 40 2 C Max 25 50 3 Units C/W C/W C/W www.aosmd.com AOD413A Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID= -250A, VGS=0V -40 -1 TJ=55C -5 IGSS Gate-Body leakage current VDS=0V, VGS= 20V Gate Threshold Voltage VDS=VGS ID= -250A -1.7 ID(ON) On state drain current VGS= -10V, VDS= -5V -30 100 VGS= -10V, ID= -12A Static Drain-Source On-Resistance TJ=125C 22 Diode Forward Voltage IS= -1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg (-10V) Total Gate Charge Qg (-4.5V) Total Gate Charge -0.76 900 VGS=0V, VDS= -20V, f=1MHz VGS= -10V, VDS= -20V, ID= -12A Units A nA V A 66 VSD Rg 44 65 IS Output Capacitance 36 52 VDS= -5V, ID= -12A Reverse Transfer Capacitance -3 52 Forward Transconductance Coss -2 VGS= -4.5V, ID= -8A gFS Crss Max V VDS= -40V, VGS=0V VGS(th) RDS(ON) Typ m S -1 V -12 A 1125 pF 97 pF 68 pF 14 16.2 21 nC 7.2 9.4 nC Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF= -12A, dI/dt=100A/s Qrr Body Diode Reverse Recovery Charge IF= -12A, dI/dt=100A/s 13.8 3.8 nC Gate Drain Charge 3.5 nC Turn-On DelayTime 6.2 ns Body Diode Reverse Recovery Time VGS= -10V, VDS= -20V, RL=1.6, RGEN=3 8.4 ns 44.8 ns 41.2 ns 21.2 ns nC A: The value of RJA is measured with the device in a still air environment with T A =25C. The power dissipation P DSM and current rating IDSM are based on TJ(MAX)=150C, using t 10s junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient. -20 E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. 20 F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. The SOA curve provides a single pulse ratin g. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. H. The maximum current rating is limited by bond-wires. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev4: April 2011 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD413A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 VDS= -5V -4.5V -10V 25 25 -4.0V 20 -ID(A) -ID (A) 20 15 15 -3.5V 10 10 5 5 125C VGS= -2.5V 25C 0 0 0 1 2 3 4 5 1.5 -VDS (Volts) Figure 1: On-Region Characteristics 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 70 1.8 60 Normalized On-Resistance 65 RDS(ON) (m ) 2 VGS= -4.5V 55 50 45 40 VGS= -10V 35 30 1.6 VGS= -10V ID= -12A 1.4 1.2 VGS= -4.5V ID= -8A 1 0.8 0.6 0 5 10 15 20 -60 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -30 0 30 60 90 120 150 180 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 120 100 ID= -12A 10 -20 20 100 80 -IS (A) RDS(ON) (m ) 1 125C 60 0.1 125C 25C 0.01 0.001 25C 40 0.0001 0.00001 20 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -vSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD413A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS= -20V ID= -12A 1000 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 800 600 400 Coss 2 Crss 200 0 0 0 2 4 6 8 10 12 14 16 0 18 5 10 15 20 25 35 40 10000 100 TJ(Max)=175C TC=25C 10s RDS(ON) limited 10 100s 1000 1ms 10ms DC 1 Power (W) -ID (Amps) 30 -VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics TJ(Max)=175C TC=25C 0.1 0.1 1 10 10 0.00001 100 -VDS (Volts) Z Jc Normalized Transient Thermal Resistance D=Ton/T TJ,PK=Tc+PDM.ZJC.RJC RJC=3C/W 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 In descending order -20pulse D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single 20 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD413A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 50 -Current rating ID(A) Power Dissipation (W) 60 40 30 20 15 10 5 10 0 0 0 25 50 75 100 125 150 175 0 TCASE (C) Figure 12: Power De-rating (Note B) 25 50 75 100 125 150 175 TCASE (C) Figure 13: Current De-rating (Note B) 1000 Power (W) TJ(Max)=150C TA=25C 100 10 1 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) Z JA Normalized Transient Thermal Resistance 10 150 -20 20 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD 0.01 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD413A Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgs Vds Qgd + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton td(on) Vgs - DUT Vgs td(off) tr tf 90% Vdd VDC + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com