Si photodiode
High sensitivity, direct detection of low
energy (2 keV or more) electron beams
S11141 S11142
Electron beam detector
www.hamamatsu.com 1
Absolute maximum ratings
Electrical and optical characteristics (Ta=25 °C)
Direct detection of low energy (2 keV or more) electron
beams with high sensitivity
High gain: 1100 times (incident electron energy: 5 keV)
Large active area size
S11141: 10 × 10 mm
S11142: 14 × 14 mm
Backscattered electron detector for scanning electron
microscope (SEM)
φ2.0 mm hole in center of active area
Design is suitable for use with backscattered electron
detector of SEM.
S11142: 4-element photodiode
Detects refl ection electron beam position (angle)
Thin ceramic package
Allows short-distance arrangement between the elec-
tron gun and a sample in a SEM
Uses a wiring board made of less magnetic materials
that are unlikely to affect electron beam trajectories.
Parameter Symbol Condition Value Unit
Reverse voltage VR max. Ta=25 °C 20 V
Operating temperature*1Topr -20 to +60 °C
Storage temperature*1Tstg -20 to +80 °C
*1: No condensation
Parameter Symbol Condition S11141 S11142*2
Unit
Min. Typ. Max. Min. Typ. Max.
Incident electron energy range - 2 - 30 2 - 30 keV
Output current Isc Electron energy 5 keV
Ip=1 nA*3- 1.1 - - 1.1 - μA
Dark current IDVR=10 mV - 0.1 1 - 0.05 0.5 nA
VR=5 V - 550- 125
Terminal capacitance Ct VR=0 V, f=10 kHz - 2000 3300 - 900 1500 pF
VR=5 V, f=1 MHz - 500 850 - 250 420
Cut-off frequency fc
VR=0 V, RL=50 Ω
λ=400 nm, -3 dB -0.5 - - 1 -
MHz
VR=5 V, RL=50 Ω
λ=400 nm, -3 dB -4--7-
Electron multiplying gain - Electron energy 5 keV - 1100 - - 1100 - -
*2: Per 1 element
*3: Injection current (probe current)
Features Applications
Si photodiode S11141, S11142
10000
1000
(Typ. Ta=25 °C, Ip=1 nA)
100
010 20
Electron energy (keV)
5152530
Gain
2
KSPDB0299EA
Gain vs. electron energy
Electron multiplication principle
Output current
Electrons generate ions as they pass through silicon. This ionization process generates a
large number of electron-hole pairs that then multiply the number of electrons.
The electron multiplication can boost the output current by approximately 1100 times at an
input electron energy of 5 keV (refer to "Gain vs. electron energy").
Si photodiode
Electron
Detail
Dead
layer
Generation of
electron-hole pairs
(electron multiplication)
Silicon
Vacuum
KSPDB0299EA
Si photodiode S11141, S11142
Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±0.2)
KSPDA0187EA
S11141
2.3
5.5 ± 0.2
(2 ×) 3.0 (2 ×) 0.2
(2 ×) 1.5
10.0(0.5)
25.0
2.0
Chip hole
7.0
Ceramic hole
10.0
0.5 ± 0.1 (0.25)
11.0-0
Ceramic
+0.2
Active area
Light shield Al
1.0 max.
5.08
Wire protection
resin
Reverse voltage (V)
Dark current
0.1 1 10 100
100 fA
1 µA
100 nA
10 nA
1 nA
100 pA
10 pA
1 pA
(Ta=25 °C)
S11141
S11142
Reverse voltage (V)
Terminal capacitance
0.1 1 10 100
100 fF
1 µF
100 nF
10 nF
1 nF
100 pF
10 pF
1 pF
(Typ. Ta=25 °C)
S11141
S11142
KSPDB0302EA
KSPDB0303EA
Terminal capacitance vs. reverse voltageDark current vs. reverse voltage
(typical example)
3
Si photodiode S11141, S11142
Cat. No. KSPD1080E01 Jul. 2011 DN
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information described in this material is current as of July, 2011. Product specifications are subject to change without prior notice due to improvements or
other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
4
S11142
14.0
35.0
7.0
Ceramic hole
14.0
0.5 ± 0.1 (0.25)
15.0-0
Ceramic
+0.2
1.0 max.
1.2
2.54
P2.54 × 4 = 10.16
Wire protection resin
7.5 ± 0.2
2.3
(4 ×) 6.925
0.15
0.15
1.8 0.3
Light shield Al
Active area
Anode common
2.0
Chip hole
KSPDA0188EA
Recommend soldering conditions
· Soldering temperature: below 260 °C
· Soldering time: within 5 seconds
