MITSUBISHI LASER DIODES ML9XX11,ML9XX16,ML9XX22 SERIES InGaAsP DFB LASER DIODES TYPE NAME ML925B11F / ML925B16F / ML925B22F DESCRIPTION APPLICATION ML9XX11,ML9XX16 and ML9XX22 series are DFB (Distributed Feedback) laser diodes emitting light beam with emission wave length of 1470 ~ 1610nm. They are well suited for light source in long distance digital transmission application of coarse WDM. They are hermetically sealed devices with the photo diode for optical output monitoring. Long - distance digital transmission system Coarse WDM application FEATURES Low threshold current (typical 10mA) Wide temperature range operation High - side mode suppression ratio (typical 40dB) High speed response (typical 0.2nsec) MQW* active layer FSBH** structure fabricated by MOCVD process * Multiple Quantum Well ** Facet Selective - growth Buried Hetero structure ABSOLUTE MAXIMUM RATINGS Parameter Symbol Po Conditions Ratings Unit CW 6 mW Light output power VRL Reverse voltage (Laser diode) - 2 V VRD Reverse voltage (Photo diode) - 20 V IFD Forward current (Photo diode) - 2 mA Tc Case temperature - 0 to +85 C Storage temperature - - 40 to +100 C Tstg ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25C) Symbol Ith Parameter Test conditions Min. Typ. Max. Unit Threshold current CW - 10 30 mA Iop Operation current CW,Po=5mW - 20 60 mA Vop Operating voltage CW,Po=5mW 1.2 CW,Po=5mW 1.8 - V Slope efficiency 0.15 mW/mA Peak wavelength Beam divergence angle (parallel) CW,Po=5mW CW,Po=5mW - 25 35 nm deg. Beam divergence angle (perpendicular) CW,Po=5mW - 35 45 deg. Side mode suppression ratio CW,Po=5mW 30 40 - dB Monitoring output current CW,Po=5mW - 0.2 - mA Rise and Fall time If=Ith,Po=5mW,10 - 90% - 0.2 0.4 ns p SMSR Im tr,tf MITSUBISHI ELECTRIC 0.25 <***> MITSUBISHI LASER DIODES ML9XX11,ML9XX16,ML9XX22 SERIES InGaAsP DFB LASER DIODES <***> Peak wave length Type Symbol Limits Test condition Min. Typ. Max. ML925B16F-04 1467 1470 1473 ML925B16F-05 1487 1490 1493 ML925B11F-04 1507 1510 1513 1527 1530 1533 1547 1550 1553 ML925B22F-04 1567 1570 1573 ML925B22F-05 1587 1590 1593 ML925B22F-06 1607 1610 1613 ML925B11F-05 ML925B11F-06 CW Po=5mW Tc=25C p Unit nm OUTLINE DRAWINGS ML925B11F ML925B16F ML925B22F mm +0 5.6 -0.03 4.25 3.550.1 (0.25) 2-90 (3) (4) (3) (2) Case (0.25) (1) (4) 0.1 2.10.15 1.2 18 1 PD 2.0Min. LD 1.0Min. 1.270.03 0.250.03 Glass 10.1 2.00.25 (P.C.D.) Emitting Facet Reference Plane 4-0.450.05 (1) (2) (2) (1)