MICROWAVE POWER GaN HEMT
MICROWAVE SEMICONDUCTOR
TGI7785-50L
TECHNICAL DATA
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information
contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding
with design of equipment incorporating this product.
November, 2011
FEATURES
HIGH POWER BROAD BAND INTERNALLY MATCHED HEMT
Pout=47.0dBm at Pin=40.0dBm HERMETICALLY SEALED PACKAGE
HIGH GAIN LOW INTERMODULATION DISTORTION
GL=11.0dB at 7.7GHz to 8.5GHz IM3(Min.)=−40dBc at Po=32.0dBm
Single Carrier Level
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Output Power Pout dBm 46.0 47.0 －
Drain Current IDS1 A － 5.0 6.0
Power Added Efficiency ηadd
VDS= 24V
IDSset≅3.0A
f = 7.7 to 8.5GHz
@Pin = 40dBm
% － 33 －
Linear Gain GL dB 10.0 11.0 －
Gain flatness ΔG
@Pin = 20dBm
dB － － ±0.8
3rd Order Intermodulation
Distortion
IM3 dBc -40 － －
Drain Current IDS2
Two-Tone Test
Po= 32.0dBm
(Single Carrier Level) A － 3.5 4.5
Channel Temperature Rise ΔTch (VDS X IDS1 + Pin – Pout)X Rth(c-c) °C － 130 150
Recommended gate resistance(Rg) : Rg= 13.3 Ω(TYP.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Transconductance gm VDS= 5
V
IDS= 5.0A
S ⎯ 4.5 ⎯
Pinch-off Voltage VGSoff VDS= 5V
IDS= 23mA
V -1 -4 -6
Saturated Drain Current IDSS VDS= 5V
VGS= 0V
A ⎯ 15 ⎯
Gate-Source Breakdown
Voltage
VGSO IGS= -10mA V -10
⎯ ⎯
Thermal Resistance Rth(c-c) Channel to Case °C/W ⎯ ⎯ 1.6
TGI7785-50L
2
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS SYMBOL UNIT RATING
VDS
Drain-Source Voltage V 50
VGS
Gate-Source Voltage V -10
IDS
Drain Current A 15
PT
Total Power Dissipation (Tc= 25 °C) W 140
Tch °C 250
Channel Temperature
Tstg °C
Storage -65 to +175
PACKAGE OUTLINE ( 7- AA04A )
Unit in mm
c Gate
d Source
e Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C.
