MICROWAVE POWER GaN HEMT TGI7785-50L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER Pout=47.0dBm at Pin=40.0dBm HIGH GAIN GL=11.0dB at 7.7GHz to 8.5GHz BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE LOW INTERMODULATION DISTORTION IM3(Min.)=-40dBc at Po=32.0dBm Single Carrier Level RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power Drain Current Power Added Efficiency SYMBOL Pout IDS1 add CONDITIONS VDS= 24V IDSset3.0A f = 7.7 to 8.5GHz @Pin = 40dBm @Pin = 20dBm Linear Gain GL Gain flatness G 3rd Order Intermodulation IM3 Two-Tone Test Distortion Drain Current IDS2 Po= 32.0dBm (Single Carrier Level) Channel Temperature Rise Tch (VDS X IDS1 + Pin - Pout)X Rth(c-c) UNIT dBm A % MIN. 46.0 TYP. 47.0 5.0 33 MAX. 6.0 dB 10.0 11.0 dB 0.8 dBc -40 A C 3.5 4.5 130 150 UNIT S MIN. MAX. TYP. 4.5 V -1 -4 -6 A 15 V -10 C/W 1.6 Recommended gate resistance(Rg) : Rg= 13.3 (TYP.) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO CONDITIONS VDS= 5V IDS= 5.0A VDS= 5V IDS= 23mA VDS= 5V VGS= 0V IGS= -10mA Rth(c-c) Channel to Case Pinch-off Voltage SYMBOL gm VGSoff The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. November, 2011 TGI7785-50L ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 50 Gate-Source Voltage VGS V -10 Drain Current IDS A 15 Total Power Dissipation (Tc= 25 C) PT W 140 Channel Temperature Tch C 250 Storage Tstg C -65 to +175 PACKAGE OUTLINE ( 7- AA04A ) Unit in mm c Gate d Source e Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2