PIC 7501-PIC 7512 PIC 7519-PIC 7530 PIC 7555-PIC 7566 Semiconductor Devices, Silicon PIC 600/601 /602 PIC 610/611/612 PIC 625/626/627 PIC 635/636/637 PIC 660/661/662 PIC 670/671/672 Hybrid Switching Regulators High Reliability Types Test Level T, Test Level T, PIC 7501/7502/7503 PIC 7519/7520/7521 PIC 7504/7505/7506 PIC 7522/7523/7524 PIC 7507/7508/7509 PIC 7525/7526/7527 PIC 7510/751 1/7512 PIC 7528/7529/7530 PIC 7555/7556/7557 PIC 7561/7562/7563 PIC 7558/7559/7560 PIC 7564/7565/7566 Contents 1.0 Scope 2.0 Applications Documents 3.0 Requirements 4.0 Quality Assurance Provisions Microsemi Corp. Watertown The diode experts 7-20 e1.0 SCOPE This specification defines the detail requirements for High Reliability Hybrid Switching Regulators. Very extensive 100% testing for parameter stability has been included in the Quality Assurance Provisions. 1a Absolute Maximum Ratings Input Voltage, V,.5 Output Voltage, V, 5 Drive-Input Reverse Voltage, V3.4 Output Current, |, Drive Current, Ig Thermal Resistance Junction to Case, 0) 6 Power Switch Commutating Diode Case to Ambient, 9 5.4 Operating Temperature Range, T, Maximum Junction Temperature, T, Storage Temperature Range 1.1b Absolute Maximum Ratings Input Voltage, V4 5 Output Voltage, V,.2 Drive-input Reverse Voltage, V3, Output Current, |, Drive Current, |, Thermal Resistance dunetion to Case, @ jc Power Switch Commutating Diode Case to Ambient, 5p Operating Temperature Range, T, Maximum Junction Temperature, T, Storage Temperature Range 580 PLEASANT STREET * WATERTOWN, MA 02172 TEL. (617) 926-0404 + FAX (617) 924-1235 PIC 7501-PIC 7512 PIC 7519-PIC 7530 PIC 7555-PIC 7566 T, Ty Ty Ty Ty Ty PIC7501 PIC7502 PIC7503 PIC7504 PIC7505 PIC7506 T, Tt, % Tt, t Tt PIC7519 PIC7520 PIC7521 PICT522 PIC7523 PIC7524 (Pic6o0) (PIC6O1) (Pic602) (PIC610) (PIC6T1) (PIC612) 60V 80V 100V -60V ~80V -100V 60V B0V 100V -60V ~80V -100V 5V 5V 5V -5V 5V 5V 5A 5A 5A 5A -5A ~5A -0.2A -O.2A -0.2A 0.2A 0.2A 0.2A _ AOC/W > ~t 4.0C/W cal _ __ - 55C to 125 +150C >_> ~65C to +150C ___ YZ Ty Ty Ty y y PIC7507 PIC7508 PIC7509 PIC7S10 PIC7511 PIC7512 tT, T, Tz Tz Ts Tt, PIC7525 PIC7526 PIC7527 PIC7528 PIC7529 PIC7530 (PIC625) (PIC626) (PIC627) (PIC635) {PIC636) (PIC637) 60V 80V 100V 60V 80V 100V 60 gov 100 -60V BOV 100V BV 5V 5V -5V -5V 5V 15A 15A 15A ~15A ~15A -15A -0.4A 04A -0.4A O.4A O4A O4A ~ 4.0C/W > << 4.0C/W > Mm _ _ - 60.0C 1" a _ -55C to 41259 <t- ~~ +150C _ > _ i - 65C to + 150C 7-21 PRINTED IN U.S.A.PIC 7501-PIC 7512 PIC 7519-PIC 7530 PIC 7555-PIC 7566 1.1 Absolute Maximum Ratings Positive Negative Output Output Ty, Ty, Ty, tL t Tt PIC7555 PIC7556 PIC7557 PIC7558 PIC7559 PIC7560 Ty T T, Ty Ty Ty PIC?7561 PIC7562 PIC7563 PIC7564 PIC7T565 PIC7566 (PIC660) (PIC661) (PIC662) (P1C670) (PIC671) (PIC672) Input Voltage, V, ; 60V 80V 100V -60V -80V ~100V Output Voltage, V,_, 60V 80V 100V 60V -80V ~100V Drive-input Reverse Voltage, V.., 5v 5V 5V ~5V -5V -5V Peak Output Current, lipk 10A 10A 10A -10A ~10A -10A Drive Current, |, -04A ~O04A -04A O4A 04A 0.4A Thermal Resistance Junction to Case, 8 y Power Switch 2t__ __. 42C Commutating Diode TT INN Case to Ambient, 0.5, cH __-_~. 608C!Ww Operating Temperature Range, T, Ha___ 85C to +125C Maximum Junction Temperature, T a --HA_ + 150C Storage Temperature Range or _ - 85C to $150C 1.1d Electrical Specifications (at 25C unless noted) PiC7501-3 PIC7504-6 PIC7519-21 PIC7522-24 Test Symbol | Min. Typ. Max. Min. Typ. Max. Units Conditions 1 | Current Delay Time tai _ 20 40 ~ 20 40 ns / Vy = 25V(-25V} 2 | Current Rise Time tri | 50 7 ~- | 50 % ns | Voyz = 5(-5) 3 | Voltage Rise Time try _ 30 so _ 30 so ns | lout = 2A (-2A) 4 | Valtage Storage Time toy | 900 _ ~ {900 ns | lg = 20mA (20mA) (Note 5) 5 | Voltage Fall Time ty _ 50 75 ~_ 50 75 ns _ | See Figure 1 6 | Current Fall Time te | 70 150 - | 70 180 ns | See Notes 1, 2,4 7 | Efficiency (Notes 2 and 4) n _ 85 _ ~_ 85. _ % 8 | On-State Voltage (Note 3) | V44(0n)| 1.0 15 | ~ |-10 -15 | Vo [1g = 2A(-2A).lg = -0.02A (0.02A) 9 | On-State Voltage (Note 3} V4.4 (on)} 2.6 3.5 |-25 -3.5 Vo {iq = SA(-S5A), lg = -0.02A (0.02A) 10 | Diode Fwd. Voltage (Note 3} | V2.4 (on)| O38 1.0 | -O8 -1.0 Vo} lp = 2A(-2A) 11 | Diode Fwd. Voltage (Note 3) | Vo_, (on)| 1.0 1.5 ~ |-1.0 -1.5 v Ip = 5A(-5A) ; 12 | Off-State Current V4.4 01 10 ~ |-01 ~10 HA | V4 = Rated input voltage 13 | Off-State Current lay _ 0.01 1.0 ~ | -01 -1.0 mA | V4 = Rated input voltage. T, = 100C 14 | Diode Reverse Current ty _ 1.0 10 {-1.0 -10 yA | V, = Rated output voltage 15 } Diode Reverse Current Iy.2 _ 0s 1.0 ~ -05 I 1.0 I mA | V, = Aated output voltage, Ty = 100C Notes: 1. in switching an inductive load, the current will lead the voltage on turn- 5. To insure safe operation, absolute value of lg should be a minimum on and lag the voltage on turn-off (see Figure 1). Therefore, Voltage of 20mA during tton)- Operation with lg below 20mA can permanently Delay Time (tpy) = ty; + t and Current Storage Time (ti) = te, + th. damage the device. 2. The efficiency is a measure of internal power losses and is equal to 6. To insure safe operation, absolute value of lz Should be a minimum Output Power divided by Input Power. The switching speed circuit of of 30mA during t(gn). Operation with | below 30mA can permanently Figure 1, in which the efficiency is measured, is representative of damage the device. typical operating conditions for the PIC600 series switching regulators. 3. Pulse test: Duration = < 400p8. Duty Cycle <2%. 4. As can be seen from the switching wavetorms shawn in Figure 1, no reverse or forward recovery spike is generated by the commutating diode during switching! This reduces self-generated noise, since no current spike is fed thraugh the switching regulator. It also improves efficiency and reliability, since the power switch only carries current during turn-on. 580 PLEASANT STREET WATERTOWN, MA 02172 TEL. (617) 926-0404 + FAX (617) 924-1235 7-22 PRINTED INU.S.A.PIC 7501-PIC 7512 PIC 7519-PIC 7530 PIC 7555-PIC 7566 PIC7507-9 PIC7510-12 PIC7525-27 PIC7528-30 Test Symbol | Min.| Typ. Tax. Min. | Typ. Max. | Units Conditions 1 | Current Delay Time tj - 35 60 - Ke] 60 ns | Viq = 25V(-25V) 2 | Current Rise Time Uy - 65 150 65 175 AS | Vout = 5V(-5) 3 | Voltage Rise Time ty | | 40 60 | 40 60 nS | lot = 7A (-7A) 4 | Voltage Storage Time tgy | 1200 ad | 1200 od ns | 1g = 30mA (30mA) (Note 6) 5 | Voltage Fall Time try 70 175 _ 100 300 ns | See Figure 1 6 | Current Fall Time ty | 175 300 | 175 300 ns | See Notes 1,2, 4 7 | Efficiency (Notes 2 and 4) n _ 85 - - 85 - % 8 | On-State Voltage (Note 3) | V4.4/0n) | 1.0 15] | -10] -15 V_ | lg = 7A(-7A), lq = 0.03A (0.03A) @ | On-State Voltage (Note 3) | V4.4 (ony| 25 36 | | -25 | -35 V_ | lq = 15A(-15A), lg = ~0.03A (0.034) 10 | Diode Fwd. Voltage (Note 3) | Vp.4 (on)! 0.85] 1.25] | -0.85) -1.25] V_ |ly = 7A(-7A) 11 | Diode Fwd. Voltage (Note 3) | Vp.; (on)| 7 0.96 1.75; ~0.95) -1.75 Vo Ip = 154 (-15A) 12 | Of-State Current 14-4 ~_ GA 10 _ -0.1 -10 uA | q = Rated input voltage 13 | Off-State Current Igy 0.04 1.0] -0.4 -1.0 | mA | V, = Rated input voltage, Ty = 100C 14 | Diode Reverse Current \4.9 _ 1.0 10 - -t.0 | -10 pA | Vy = Rated output voltage |15 Diode Reverse Current tye - 0.5 10) - 9.5 ~1.0 | mA iM = Rated output voltage, Ta = 100C . a PIC7555-7 PIC7558-60 PIC7561-3 PIC7564-6 Test Symbol | Min.| Typ. Max. | Min. | Typ. Max. | Units Conditions 1 | Current Detay Time tai _ 35 60 ~ 36 60 ns | Viz, = 25V (-25V) 2 | Current Rise Time ti 65 150 65 175 ns | Voue = 5V (-5) 3 | Voitage Rise Time by - 40 60 _ 40 60 AS | doy, = SA (-5A) 4 | Voltage Storage Time tey | 1200 ~ | 1200 _ Ns | 1g = 30MA (~30mMA) (Note 6) 5 | Voltage Fall Time ty - 70 176 _ 100 300 ns_ | See Figure 1 6 | Current Fait Time te _ 175 300 _ 175 300 ns | See Notes 1, 2,4 7 | Efficiancy n _ 85 _ 85 - % | See Notes 2 and 4 8 | On-State Voltage V4-1 (on) = 1.0 1.5 _ -1.0 -15 Vo | lg = 5A(~5A), tg = -30mA (30mA), Notes 3, 5 9 | On-State Voltage V4-4 fon)| 25 36 | | -25 | -35 | V_ | Ig = 10A(-10A), 1g = 30mA(30mA), Notes 3,5 10 ; Diode Fwd. Voltage Ve-4(on)} 0.85} 1.25 | | -085| -1.25}; V | Ip = 5A(-5A) 11 | Diode Fwd. Voltage Vo.4 (on)) 0.95 1.76 - -0.95 -1.75 v Ip = 10A(- 10A) 12 | Off-State Current Ig4 _ 0.1 10 _ -0.1 | -10 HA | V4 = Rated input voltage 13 | Off-State Current 14.4 _ 01 1 [-.4 -1 mA | V4 = Rated input voltage, T, = 100C 14 | Diode Reverse Current Iy.0 ~ 1.0 10 -1.0 -10 vA | V, = Rated output voltage 15 | Diode Reverse Current Iho - 0.5 1.0 | | -05] -1.0 | mA | V, = Rated output voltage, T, = 100C L fe ene |} 4 vail L Vin = +25 + x POWER SINITCH i Ri Vout von= tome t Tott = 40y! 4 Puce athe a - Key at . i Note: See Tabie | for R, L ep Oe COMMUTATING DIODE 4 +20 SU UU Ig and C values. - 3 | Note: No Diode Reverse or Forward Recovery Spike Positive Output Switching Speed Circuit (Gee note 4). ry SP Positive Output Switching Waveforms Note: Negative test circuit and waveforms are identical but of opposite polarity (Vj, = ~25V, Vout = 5V). Figure 1. 580 PLEASANT STREET WATERTOWN, MA 02172 TEL. (617) 926-0404 + FAX (617) 924-1235 7-23 PRINTED IN LLS.A.PIC 7501-PIC 7512 PIC 7519-PIC 7530 PIC 7555-PIC 7566 Table I. Component Values for Switching Speed Circuit L, required Ry 20mA 1.2 kohms +5% tolerance 30mA 820 ohms +5% tolerance I, Current R, L c 2A 2.5 ohms + 1% 10 watt 300 uH 50 uF 100V electrolytic 5A Tohm +1% 50 watt 150 2H 150yuF 100V electrolytic 7A 0.714 ohms + 1% 35 watt 150 pH 150uF 100V electrolytic MECHANICAL SPECIFICATIONS Notes: 1. Case is electrically isolated. 4-Pin TO-66 2. Loads may be soldered to within '/," of base provided temperature-time exposure is - less than 260C for 10 seconds. jf... ms. | mm A | 620 MAX. S75 MAX 4 [ 8 | 50-075, 127-181 > B F | | omc foros | FD = ey DRIVE(3) 2499-2645 ew 7 te I{NPUT(4) e210 [4easas | c E C if 483-5.53 } l | f 1 [aaa Max RAO. | A D limes j H | 570-.590 14 4B-14.99 T H Dy | a2- 152 1. [361-386018 | a |e | sco mn fos COMMON(2) J L. | 250-.340 6.36-8,64 Lb + K ourpuTa) SCHEMATIC pos. 4 4 POS. nec. 4 NEG. INPUT OUTPUT INPUT OUTPUT 3 2 3 2 DRIVE COMMON DRIVE COMMON PIC7501-3, PIC7519-21 PIC7504-4, PIC7522.24 PIG7507-9, PIC7525-27 PIC7510-12, PIC7528-30 PIC7555-57, PIC7561-65 PIC7558-60, PIC7564-66 Figure 2. Physical Dimensions and Biasing Diagrams 2.0 APPLICABLE DOCUMENTS The following documents of the issue in effect on the date of invitations for bids, farm a part of this specification to the extent specified herein. MIL-S-19500 General Specifications for Semiconductor Devices MIL-S-19491 Preparation for Delivery of Semiconductor Devices 7-24PIC 7501-PIC 7512 PIC 7519-PIC 7530 PIC 7555-PIC 7566 3.0 REQUIREMENTS 3.1 Design and Construction The Hybrid devices supplied under this specification shall have a design and construction such that they will meet all of the requirements specified herein. The dimensions and physical characteristics shalt be as specified in Figure 2. 3.2 Performance Characteristics The performance characteristics of the Hybrid device supplied under this specification shall be as specified in Group A in- spection defined in Table Ill. 3.3 Quality Assurance The Quality Assurance Provisions shalt be as defined in paragraph 4.0. 3.4 Test Methods Test methods shall be as specified herein. 3.5 Marking The markings on the devices supplied shall be permanent and legible and shall include the Manufacturer's name or trademark, a Manufacturing Date Code in accordance with MIL-S-19500 and the specific device type number. 3.6 Preparation for Delivery The Hybrid devices supplied under this specification shall be prepared for delivery in accordance with level C of MIL- -19491 uniess otherwise directed in the specific contract or purchase order. 3.7 Ordering Data Procurement documents should specify the following: a. Specific item type number b. Number and date of this specification c. Quality Assurance Test level required d. Any special packaging if required 4.0 QUALITY ASSURANCE PROVISIONS 4.1 General Provisions 4.1.1 Inspection Responsibility The supplier is respon- sible for the performance of all inspection requirements and acceptability of results as specified herein for the Test Level identified in the contract or purchase order. 4.1.2 Controlled Manufacture The devices supplied under this specification shall be manufactured under controlled conditions using formally defined quality assurance methods and systems. 4.1.3 Manufacturing Traceability Each device supplied under this specification shall be traceable to a specific pro- cess group, to permit tracing of its full manufacturing history. Process group records shall indicate the exact date that each manutacturing operation was performed and identity materials and process procedures which were used. The manufacturer shali keep these records on file for at least five years. 4.1.4 Definitions 4.1.4.1 inspection Lot An inspection fot is a collection of devices from which a sample is withdrawn and inspected to determine compliance with the acceptibility criterion. It shall consist of one or more inspection subliots of the device types defined in this specification. The maximum inspection lot size shall be 5000 units. 580 PLEASANT STREET + WATERTOWN, MA 02172 TEL. (617) 926-0404 - FAX (617) 924-1235 7-25 4.1.4.2. Inspection Sublot An inspection sublot shall con- sist of a collection of devices of a single type which have been manufactured under the same conditions and with the same materials, 4143 Shipment Lot A shipment lot shall consist of devices taken from an accepted inspection lot for the purpose of shipment on a specific contract or order. 4.1.4.4 Group A Inspection Group A inspection shall con- sist of the examinations and tests specified in Table I, and shall be performed on a sublot basis. 4.1.45 Controlled inventory The controlled inventory shall consist of lots which have successfully passed the acceptance inspection and are being held in storage prior to actual ship- ment. A controtied inventory shall have adequate safequards to insure that no defective or untested devices can be includ- ed in it. It shall be accessible only to those individuals who are formatly identified as authorized personnel. 4.2 Acceptance Inspection The acceptance inspection requirements shall be as defined by the applicable test level. The procedures of MIL-S-19500 shall apply to Group A inspection. Inspection lots which have been Inspected and accepted shall be kept in a controlled inventory. Shipment lots shall be formed using devices taken from accepted inspection lots. 4.2.1 Test Level T2 Requirements Test lavel T2 shall con- sist of the following requirements. 4.2.1.1 The supplier shall perform the Parameter Stability Testing defined in paragraph 4.3 on each device to be sup- plied. Prior to starting the Blocking Stability test defined in paragraph 4.3.6, each device shall be serialized for individual identity. Variables test data for the controlled electrical param- eters shall be recorded before and after stressing. The same procedure shall apply for the Power Stress stability test defined in paragraph 4.3.8. 4.2.1.2 The supplier shall perform the Group A inspections in accordance with the defined LTPD requirements on each in- spection sublot. Electrical parameter testing as specified shall be performed by variables with test data recorded. 4.2.1.3 With each shipment lot, the supplier shall provide a Certificate of Compliance to test level T2 of this specification. 4.2.2 Test Level T1 Requirements Test level T1 shall con- sist of the following requirements. 4.2.2.1 The supplier shall perform the Parameter Stability Testing defined in paragraph 4.3 on each device to be sup- plied. Electrical parameter testing as specified shail be per- formed by attributes. 4.2.2.2 The supplier shall perform the Group A inspections in accordance with the defined LTPD requirements on each in- spection sublot. Electrical parameter testing as specified shall be performed by attributes with test data recorded. 4.2.2.3. With each shipment lot, the supplier shall provide a Certification of Compliance to test level T1 of this specification. 4.3 Parameter Stability Tests Each hybrid device to be supplied under this specification shall receive the following tests in addition to other standard testing performed by the manufacturer. PRINTED IN U.S.A.4.3.1 Temperature Storage Each Hybrid device shall be subjected, in a non-operating state, to a temperature of 150C for a minimum period of 48 hours. 4.3.2 Temperature Cycling Each Hybrid device shal! be temperature cycled from 55C to 150C for a minimum of 10 cycles. Each cycle shall consist of at least 15 minutes at each temperature extreme with a maximum transition time of 5 minutes between each temperature extreme. 4.3.3 Hermetic Seal Test Fine Leak Each Hybrid device shall be tested for a case leakage rate of 1 x 10-8 ce/sec or smaller using a helium mass spectrometer or equivalent method. Devices with a case leakage rate greater than specified shail be removed from the lot. 4.3.4 Hermetic Seal Test Gross Leak Each Hybrid device shall be tested for gross leaks using fluorocarbon gross leak test or equivalent method. Devices with any indication of case leakage shall be removed from the jot. 4.3.5 Reverse Bias Clamp Inductive Test V4.9 = Rated Input Voltage f = 25kHz, E,,, = 5V Te = 25C, see Figure 4 lour See Table ll t = 1 sec max Part Type PIC7501/7502/7503/7519/7520/7521 PIC7507/7508/7509/7525/7526/7527 PIC7555/7556/755 7/7561 /7562/7563 PIC7504/7505/7506/7522/7523/7524 PIC7507/7508/7509/7528/7529/7530 P1C7558/7559/7560/7564/7565/7655 PIC7501/7502/7503/7519/7520/7521 PIG7507/7508/7509/7525/7526/7527 P1IC7555/7556/7557/7561/7562/7663 PIG7504/7505/7506/7522/7523/7524 PIC7507/7508/7509/7528/7529/7530 PIC7558/7589/7560/7564/7565/7655 PIC7501/7502/7503/7519/7520/7521 PIC7507/7508/7509/7525/7526/7527 PIC7555/7556/7557/7561 7562/7563 PIC7504/7505/7506/7522/7523/7524 PIC7507/7508/7509/7528/7529/ 7530 PIC7558/7559/7560/7564/7565/7655 PIC7501/7502/7503/75 1 9/7520/7521 PIC7507/7508/7509/7525/7526/7527 PIC7555/7956/7557/7561/7562/7563 PIC7504/7505/7506/7522/7523/7524 PIC?507/7508/7509/7528/7529/7530 PIC7558/7559/7560/7564/7565/7655 * Whichever is greater. 580 PLEASANT STREET WATERTOWN, MA 02172 TEL. (617) 926-0404 FAX (617) 924-1235 14 PIC 7501-PIC 7512 PIC 7519-PIC 7530 PIC 7555-PIC 7566 4.3.6 High Temperature Reverse Bias Each Hybrid device will be high temperature reversed biased in the circuit shown in Figure 3. The conditions of this test are as follows: Ty = +125C Time = 16 hours Oo hours Circuit and voltages as shown in Figura 3. + VOLTAGE = 80% OF pocccc f , 27K DEVICE RATING (NOMINAL) O ---= _ ads A TO 40K VOLTAGE = 80% OF DEVICE RATING (NOMINAL) Figure 3. High Temperature Reverse Bias Circuit 4.3.7 The following measurements will ba made before and after the high temperature reverse bias test. The unit measurements shall be recorded or the devices will be celled in order to compare and guarantee the delta (A) requirements depending on the test level to which the lot is being prepared. 7-26 Maximum Readings inital & Final 1.5V 1.5V 1.5V -1.5V -1.5V -1.5V 1.0V 1.25V 1.25V 1.0 -1.25V 1.25V 10,A 10uA 10uA 10pA 10yA 10yA 10uA 10uA 10uA =10yA = 10 pA = 10pA Delta Change +1.0 or +1.0o0r +1.0 or +1.00r +1.0 or +1.0 or +20 o0r $2.0 or +2.0 or +2.00r +2.00r +2.00r +0.3V +0.3V +0.3V +0.3V +0.3V +0.3V +0.25V +0.3V +0.3V +0.25V +0.3V +0.3V + 100%" + 100%* + 100%* +100%* + 100%* + 100%* + 100%* + 100% + 100%* + 100%* + 100%* + 100%* Symbol Va (on) Va (on) Vas ( Va4 (on} V, 4-1 (on) Va (on) fan) Vo4 (on) Vo-1 (on) Vo.4 fon) V5.4 (on) V2.4 (on) V2.4 (on) 4-1 4-4 PRINTED IN U.S.A.Vi Vi 4-2 fout = Rated Voltage pone M aed c A Rat = Input Waveform ia 1 TUL | Ton = 10 us Note 1: Adjust Tog to obtain specified lout: Note 2: Negative output test circuits and waveforms are identical but of opposite polarity. Note 3: See Table II for component values. Figure 4. Reverse Bias Ciamp inductive Test Circuit PIC 7501-PIC 7512 PIC 7519-PIC 7530 PIC 7555-PIC 7566 4.3.8 Power Stress Each Hybrid device shall be burned-in using the circuit shown in Figure 5. The conditions are as follows: Ta = +25C Time = 40 hours minimum Circuit and conditions as shown in Figure 5. 5V 4.3.9 The readings before and after burn-in shall be as specified in paragraph 4.3.7 above. Table Il. Component Vaiues for Clamped Inductive Test (Refer to Figure 4) Device Type Rg, Lic R, lour PIC 7501, 7504 PIC 7519, 7522 3K 300/100 25 2 PIC 7502, 7505 PIC 7520, 7523 4k 300/100 25 2 PIC 7503, 7506 PIC 7521, 7524 SK 300/100 25 2 PIC 7507, 7525 PIC 7510, 7528 PIC 7555, 7561 PIC 7558, 7564 2K 150/400 1 PIC 7508, 7526 PIC 7511, 7529 PIC 7556, 7562 PIC 7589, 7565 2.7K 150/100 1 & PIC 7508, 7527 Pic 7512, 7530 PIC 7557, 7563 PIC 7560, 7566 3.3K 150/100 1 5 580 PLEASANT STREET WATERTOWN, MA 02172 TEL. (617) 926-0404 FAX (617) 924-1235 7-27 PRINTED IN U.S.A.PiC 7501-PIC 7512 PIC 7519-PIC 7530 PIC 7555-PIC 7566 Table Il. Group A Inspection | Electrical |Sample| Max. Spec Test | Size | Acc. Examination or Test Symbol | Number | (LTPD) | No. Subgroup 1 Visual and Mechanical _ _ 22 0 (10) Subgroup 2 25C Tests On-State Voltage V4-1 on 8 45 0 On-State Voltage V4-4 on 9 (5) Diode Forward Voltage Vo-1 on 10 Diode Forward Voltage Vo.4 on Off-State Current hay 12 Diode Reverse Current lye 14 Subgroup 3 1%] =+100C Tests Off-State Current lad 13 45 0 Off-State Current \12 15 (5) Subgroup 4 25C Tests Current Delay Time tal 1 Current Rise Time tr 2 Voltage Rise Time ty 3 45 0 Voltage Fali Time try 5 (5) Current Fall Time ti 6 ARNOLD A930 - 157-2 N = 16 TURNS Positive Output WIRE = 16 AWG Eout Adjust Ein | TTT TO TTT out, to obtain fo = 2A Eout = 5V 252 15 WATTS OV 5-15uSEC > Duty Cycle = 25% ARNOLD 4930 - 157-2 N = 16 TURNS ; Negative Output WIRE = 18 AWG AdustEin Hr Eout lo = 2A to obtain Oo = Eout = -45V 252 15 WATTS wt ~Ein | Figure 5. Burn-in Circuits 580 PLEASANT STREET WATERTOWN, MA 02172 TEL. (617) 926-0404 FAX (617) 924-1235 7-28 PRINTED IN U.S.A