Jan 2005 Version :0.0 Page 1 of 1
BC817A Silicon NPN Epitaxial Transistor
Description: The BC817A is designed for audio frequency general amplifier applications
Features: ●Excellent hFE Linearity
●Complementary to BC807A
Chip Appearance
Chip Size 440um×440um
Chip Thickness 210±20um
Base 110um×110um
Bonding Pad Size
Emitter 110um×110um
Front Metal Al
Backside Metal Au(As)
Scribe line width 50um
Wafer Size 6 inch
Electrical Characteristics( Ta=25℃)
Characteristic Symbol Test Condition Min Max Unit
Collector Cutoff Current ICBO VCB=45V, IE=0 0.1 uA
Emitter Cutoff Current IEBO VEB=5V, IC=0 0.1 uA
Collector-Base Breakdown Voltage BVCBO IC=0.1mA 50
V
Collector-Emitter Breakdown Voltage BVCEO IC=1mA 45
V
Emitter-Base Breakdown Voltage BVEBO IE=0.1mA 5.0
V
DC Current Gain hFE VCE=1V, IC=100mA 120 560
Collector Saturation Voltage VCE(sat) IC=500mA,IB=50mA 0.6 V
BC817
A
