SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 FEBRUARY 1996
COMPLEMENTARY TYPE BSP31 BSP41
BSP33 BSP43
PARTMARKING DETAIL Device type in full
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BSP31 BSP33 UNIT
Collector-Base Voltage VCBO -70 -90 V
Collector-Emitter Voltage VCEO -60 -80 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -2 A
Continuous Collector Current IC-1 A
Power Dissipation at Tamb
=25°C PTOT 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base BSP31
Breakdown Voltage BSP33
V(BR)CBO -70
-90
V
V
IC
=-100µA
IC
=-100µA
Collector-Emitter BSP31
Breakdown Voltage BSP33
V(BR)CEO -60
-80
VI
C
=-10mA
IC
=-10mA
Emitter-Base
Breakdown Voltage
V(BR)EBO -5 V IE=-10µA
Collector Cut-Off Current ICBO -100
-50
nA
µA
VCB=-60V
VCB=-60V, Tamb
=125°C
Collector-Emitter Saturation
Voltage
VCE(sat) -0.25
-0.5
V
V
IC
=-150mA, IB
=-15mA
IC
=-500mA, IB
=-50mA
Base-Emitter
Saturation Voltage
VBE(sat) -1.0
-1.2
V
V
IC
=-150mA, IB
=-15mA
IC
=-500mA, IB
=-50mA
Static Forward Current
Transfer Ratio
hFE 30
100
50
300
IC
=-100µA, VCE
=-5V
IC
=-100mA, VCE =-5V
IC
=-500mA, VCE =-5V
Collector Capacitance Cc20 pF VCB =-10V, f =1MHz
Emitter Capacitance Ce120 pF VEB =-0.5V, f =1MHz
Transition Frequency fT100 MHz IC
=-50mA, VCE=-10V
f =35MHz
Turn-On Time Ton 500 ns VCC
=-20V, IC =-100mA
IB1 =-IB2 =-5mA
Turn-Off Time Toff 650 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
BSP31
BSP33
C
C
E
B
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