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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
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LINEAR & POWER AMPLIFIERS - SMT
HMC415LP3 / 415LP3E
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
v03.0605
General Description
Features
Functional Diagram
The HMC415LP3 & HMC415LP3E are high effi-
ciency GaAs InGaP Heterojunction Bipolar Tran-
sistor (HBT) MMIC Power ampli ers which operate
between 4.9 and 5.9 GHz. The ampli er is pack-
aged in a low cost, leadless surface mount pack-
age with an exposed base for improved RF and
thermal performance. With a minimum of external
components, the ampli er provides 20 dB of gain,
+26 dBm of saturated power, and 34% PAE from a
+3V supply voltage. Vpd can be used for full power
down or RF output power/current control. For +15
dBm OFDM output power (64 QAM, 54 Mbps), the
HMC415LP3 & HMC415LP3E achieve an error
vector magnitude (EVM) of 3.7% meeting 802.11a
linearity requirements.
Gain: 20 dB
34% PAE @ Psat = +26 dBm
3.7% EVM @ Pout = +15 dBm
with 54 Mbps OFDM Signal
Supply Voltage: +3V
Power Down Capability
Low External Part Count
Electrical Speci cations, TA = +25° C, Vs = 3V, Vpd = 3V
Typical Applications
This ampli er is ideal for use as a power
ampli er for 4.9 - 5.9 GHz applications:
• 802.11a WLAN
• HiperLAN WLAN
• Access Points
• UNII & ISM Radios
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 4.9 - 5.1 5.1 - 5.4 5.4 - 5.9 GHz
Gain 18 20 18.5 20.5 16 19 dB
Gain Variation Over Temperature 0.04 0.05 0.04 0.05 0.04 0.05 dB / °C
Input Return Loss 10 9 8 dB
Output Return Loss 10 12 8 dB
Output Power for 1dB
Compression (P1dB)
Icq = 285 mA
Icq = 200 mA
20 22.5
22.0
20.5 23.0
22.5
18 21.5
21.0 dBm
Saturated Output Power (Psat) 25.5 26 24 dBm
Output Third Order Intercept (IP3) 28 31 29 32 27 30 dBm
Error Vector Magnitude
(54 Mbps OFDM Signal @ +15 dBm Pout) Icq = 200 mA 3.7 %
Noise Figure 6 6 6 dB
Supply Current (Icq) Vpd = 0V/3V 0.002 /
285
0.002 /
285
0.002 /
285 mA
Control Current (Ipd) Vpd = 3V 7 7 7 mA
Switching Speed tOn, tOff 45 45 45 ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
P1dB vs. Temperature Psat vs. Temperature
-25
-20
-15
-10
-5
0
5
10
15
20
25
345678
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
24
4.8 5 5.2 5.4 5.6 5.8 6
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
4.8 5 5.2 5.4 5.6 5.8 6
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
-20
-15
-10
-5
0
4.8 5 5.2 5.4 5.6 5.8 6
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
4.8 5 5.2 5.4 5.6 5.8 6
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
-20
-15
-10
-5
0
4.8 5 5.2 5.4 5.6 5.8 6
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
HMC415LP3 / 415LP3E
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
v03.0605
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 68
LINEAR & POWER AMPLIFIERS - SMT
Power Compression @ 5.2 GHz Output IP3 vs. Temperature
Noise Figure vs. Temperature Gain & Power vs. Supply Voltage
Reverse Isolation vs. Temperature Power Down Isolation vs. Temperature
0
4
8
12
16
20
24
28
32
36
-12-10-8-6-4-2024681012
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
20
22
24
26
28
30
32
34
36
38
40
4.8 5 5.2 5.4 5.6 5.8 6
+25 C
+85 C
-40 C
OIP3 (dBm)
FREQUENCY (GHz)
-50
-40
-30
-20
-10
0
4.8 5 5.2 5.4 5.6 5.8 6
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
18
19
20
21
22
23
24
25
26
27
28
2.7 3 3.3
Gain
P1dB
Psat
Gain (dB), P1dB (dBm), Psat (dBm)
Vcc Supply Voltage (Vdc)
-50
-40
-30
-20
-10
0
4.8 5 5.2 5.4 5.6 5.8 6
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
4.8 5 5.2 5.4 5.6 5.8 6
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
HMC415LP3 / 415LP3E
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
v03.0605
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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Gain, Power & Quiescent
Supply Current vs. Vpd @ 5.2 GHz
EVM vs. Temperature,
Icc = 240 mA, F = 5.2 GHz
EVM vs. Supply Current,
F = 5.2 GHz
0
1
2
3
4
5
6
7
8
10 11 12 13 14 15 16 17 18
Icc=160mA
Icc=200mA
Icc=240mA
Icc=280mA
ERROR VECTOR MAGNITUDE (%)
OUTPUT POWER (dBm)
0
1
2
3
4
5
6
7
8
10 11 12 13 14 15 16 17 18
+25 C
+85 C
-40 C
ERROR VECTOR MAGNITUDE (%)
OUTPUT POWER (dBm)
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
30
50
70
90
110
130
150
170
190
210
230
250
270
290
310
330
1.5 1.75 2 2.25 2.5 2.75 3
Gain
P1dB
Psat
Icc
GAIN (dB), P1dB (dBm), Psat (dBm)
Icc (mA)
Vpd (Vdc)
HMC415LP3 / 415LP3E
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
v03.0605
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 70
LINEAR & POWER AMPLIFIERS - SMT
Outline Drawing
Absolute Maximum Ratings
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Collector Bias Voltage (Vcc) +5Vdc
Control Voltage (Vpd) +3.5 Vdc
RF Input Power (RFIN)(Vs = Vpd = +3.0 Vdc) +13 dBm
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 17 mW/°C above 85 °C) 1.105 W
Thermal Resistance
(junction to ground paddle) 59 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC415LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] 415
XXXX
HMC415LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 415
XXXX
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
HMC415LP3 / 415LP3E
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
v03.0605
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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Pin Number Function Description Interface Schematic
1Vcc
Power supply voltage for the rst ampli er stage. An external bypass
capacitor of 330 pF is required as shown in the application schematic.
2, 3, 5, 6, 7,
8, 9, 12, 13,
15, 16
GND
Ground: Backside of package has exposed metal ground slug
that must be connected to ground thru a short path. Vias under
the device are required.
4 RFIN This pin is AC coupled and matched to 50 Ohms from 5.0 to 6.0 GHz.
10, 11 RFOUT RF output and DC bias for the output stage.
14 Vpd
Power control pin. For maximum power, this pin should be connected to
3.0V. A higher voltage is not recommended. For lower idle current, this
voltage can be reduced.
Pin Descriptions
HMC415LP3 / 415LP3E
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
v03.0605
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
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LINEAR & POWER AMPLIFIERS - SMT
Evaluation PCB
The circuit board used in the nal application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
List of Materials for Evaluation PCB 105173 [1]
Item Description
J1 - J2 PCB Mount SMA RF Connector
J3 2 mm DC Header
C1 - C3 330 pF Capacitor, 0603 Pkg.
C4 2.2 μF Capacitor, Tantalum
C5 0.5 pF Capacitor, 0603 Pkg.
C6 7.0 pF Capacitor, 0402 Pkg.
L1 3.0 nH Inductor, 0805 Pkg.
U1 HMC415LP3 / HMC415LP3E Ampli er
PCB [2] 104723 Eval Board
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
HMC415LP3 / 415LP3E
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
v03.0605
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 73
Application Circuit
Note 1: C1 should be located < 0.1” (2.54mm) from Pin 1 (Vcc)
Note 2: C3 should be located < 0.1” (2.54mm) from L1.
Recommended Component Values
L1 3.0 nH
C1, C2, C3 330 pF
C4 2.2 μF
C5 0.5 pF
C6 7.0 pF
HMC415LP3 / 415LP3E
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
v03.0605
