BAV19WS ~ BAV21WS SMALL SIGNAL DIODES
PRV : 100 Volts
Io : 250 mA
FEATURES :
* Silicon Epitaxial Planar Diode
* For General Purpose
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SOD-323 plastic Case
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Parameter Symbol BAV19WS BAV20WS BAV21WS Unit
Reverse Voltage VR100 150 200 V
Peak Reverse Voltage VRM 120 200 250 V
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at Tamb = 25 °C and f ≥ 50 Hz
Surge Forward Current at t < 1 s and Tj = 25 °CIFSM 1.0 A
Power Dissipation at Tamb = 25 °CPtot 200 1) mW
Junction Temperature Tj 150 °C
Storage Temperature Range TS -65 to + 175 °C
ELECTRICAL CHARACTERISTICS
(Rating at Tj = 25 °C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit
IF = 100 mA - - 1 V
IF = 200 mA - - 1.25 V
Leakage Current BAV19WS VR = 100 V - - 100
BAV20WS IR VR = 150 V - - 100
BAV21WS VR = 200 V - - 100
Capacitance Ctot VF = VR = 0 V - - 1.5 pF
IF = 30 mA, IR = 30mA
Irr = 3 mA, RL = 100Ω
Note : 1) Valid provided that electrodes are kept at ambient temperature
Page 1 of 2 Rev. 03 : March 25, 2005
Forward Voltage
50 ns Reverse Recovery Time Trr - -
IF(AV) 250 mA
nA
Test Condition
VF
Dimensions in inches and (millimeters)
SOD-323
0.076 (1.95)
0.059 (1.5)
0.043 (1.1)
0.065 (1.65)
0.100 (2.55)
0.012 (0.3)
max. 0.004(0.1)
0.049 (1.25)
max.
min. 0.010 (0.25)