TIP110, TIP115
Darlington Transistors
Page 1 16/03/06 V1.0
Features:
Designed for general-purpose amplifier and low speed switching applications.
••Collector-emitter sustaining voltage-VCEO (sus) = 60V (Minimum) - TIP110, TIP115.
••Collector-emitter saturation voltage-VCE (sat) = 2.5V (Maximum) at IC= 2.0A.
••Monolithic construction with built-in-base-emitter shunt resistor.
Dimension Minimum Maximum
A 14.68 15.31
B 9.78 10.42
C 5.01 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.97
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
Dimensions : Millimetres
Maximum Ratings
Characteristic Symbol TIP110
TIP115 Unit
Collector-Emitter Voltage VCEO 60
VCollector-Base Voltage VCBO
Emitter-Base Voltage VEBO 5.0
Collector Current-Continuous
Peak
IC
ICM
2.0
4.0 A
Base Current IB50 mA
Total Power Dissipation at TC= 25°C
Derate above 25°C PD50
0.4
W
W/°C
Operating and Storage Junction
Temperature Range TJ, TSTG -65 to +150 °C
Thermal Characteristics
Characteristic Symbol Maximum Unit
Thermal Resistance Junction to Case Rθjc 2.5 °C/W
Pin 1. Base
2. Collector
3. Emitter
4. Collector (Case)
NPN PNP
TIP110 TIP115
2.0 Ampere
Darlington
Complementary Silicon
Power Transistors
60 Volts
50 Watts
TO-220
TIP110, TIP115
Darlington Transistors
Page 2 16/03/06 V1.0
Characteristic Symbol Minimum Maximum Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
(IC= 30mA, IB= 0) TIP110, TIP115 VCEO (sus) 60 - V
Collector Cut off Current
(VCE = 30V, IB= 0) TIP110, TIP115 ICEO - 2.0
mA
Collector Cut off Current
(VCB = 60V, IE= 0) TIP110, TIP115 ICBO - 1.0
Emitter Cut off Current
(VEB =5.0V, IC= 0) IEBO - 2.0
ON Characteristics (1)
DC Current Gain
(IC= 1.0A, VCE = 4.0V)
(IC= 2.0A, VCE = 4.0V)
hFE 1000
500
- -
Collector-Emitter Saturation Voltage
(IC= 2.0A, IB= 8.0mA) VCE (sat) - 2.5
V
Base-Emitter On Voltage
(IC= 2.0A, VCE = 4.0V) VBE (on) - 2.8
Dynamic Characteristics
Small-Signal Current Gain
(IC= 0.75A, VCE = 10V, f = 1.0MHz) hfe 25 - -
Output Capacitance
(VCB = 10V, IE= 0, f = 0.1MHz) TIP110
TIP115
Cob - 250
150
pF
Electrical Characteristics (TC= 25°C unless otherwise noted)
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%.
Figure - 1 Power Derating
TC, Temperature (°C)
PD, Power Dissipation (Watts)
TIP110, TIP115
Darlington Transistors
Page 3 16/03/06 V1.0
Internal Schematic Diagram
NPN
TIP110 PNP
TIP115
IC, Collector Current (AMP)
Figure - 2 Switching Time Figure - 3 Switching Time
IC, Collector Current (AMP)
t, Time (µs)
t, Time (µs)
Figure - 4 Capacitances Figure - 5 Active Region Safe Operating Area
C, Capacitance (pF)
VR, Reverse Voltage (Volts) VCE, Collector Emitter Voltage (Volts)
IC, Collector Current (AMP)
TIP110, TIP115
Darlington Transistors
Page 4 16/03/06 V1.0
There are two limitation on the power handling ability of a
transistor: average junction temperature and second breakdown safe
operating area curves indicate Ic-VCE limits of the transistor that
must be observed for reliable operation i.e., the transistor must not
be subjected to greater dissipation than the curves indicate.
The data of Figure - 5 and 6 is base on TJ (PK) = 150°C; Tc is
variable depending on power level. Second breakdown pulse limits
are valid for duty cycles to 10% provided TJ (PK) ≤150°C, At high
case temperatures, thermal limitation will reduce the power that can
be handled to values less than the limitations imposed by second
breakdown.
Specifications
IC (av)
maximum
(A)
VCEO
maximum
V
hFE
minimum
at Ic= 1A
Ptot
at 25°C
(W)
Package Type Part Number
2 60 1000 50 TO-220 NPN TIP110
PNP TIP115
VCE, Collector Emitter Voltage (Volts)
IC, Collector Current (AMP)
Figure - 6 Active Region Safe Operating Area
For enquiries from all other markets
TIP110, TIP115
Darlington Transistors
Page 5 16/03/06 V1.0
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