For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
VCOS with Fo/2 OUTPUT - SMT
8
8 - 1
General Description
Features
Functional Diagram
The HMC738LP4(E) is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) MMIC VCO. The
HMC738LP4(E) integrates a resonator, negative
resistance device, varactor diode and divide-by-16
prescaler. The VCO’s phase noise performance is
excellent over temperature, shock, and process due
to the oscillator’s monolithic structure. Power output is
+9 dBm typical from a 5V supply voltage. The voltage
controlled oscillator is packaged in a low cost leadless
QFN 4x4 mm surface mount package
Pout: +9 dBm
Phase Noise: -95 dBc/Hz @ 100 kHz Typ.
No External Resonator Needed
24 Lead 4x4mm SMT Package: 16mm²
Typical Applications
The HMC738LP4(E) is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios / LMDS
• VSAT
Electrical Specications, TA = +25° C, Vcc (RF), Vcc (DIG) = +5V
Parameter Min. Typ. Max. Units
Frequency Range Fo
Fo/2 20.9 - 23.9 GHz
Power Output RF OUT
RF OUT/2
RF OUT/16
3
-3.5
-7
15
+3.5
-1
dBm
dBm
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output -95 dBc/Hz
Tune Voltage Vtune 1 13 V
Supply Current Icc (RF), Icc (DIG) 160 200 220 mA
Tune Port Leakage Current (Vtune= 13V) 10 µA
Output Return Loss 3 dB
Harmonics/Subharmonics 1/2
3/2
-23
-40
dBc
dBc
Pulling (into a 2.0:1 VSWR) 22 MHz pp
Pushing @ Vtune= 5V -90 MHz/V
Frequency Drift Rate 3.5 MHz/°C
HMC738LP4 / 738LP4E
MMIC VCO w/ HALF FREQUENCY OUTPUT
& DIVIDE-BY-16, 20.9 - 23.9 GHz
v02.0309