AUTOMOTIVE GRADE AUIRF2807 HEXFET(R) Power MOSFET Features Advanced Planar Technology Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base part number Package Type AUIRF2807 TO-220 75V RDS(on) max. 13m ID (Silicon Limited) 82A ID (Package Limited) 75A S D G TO-220AB AUIRF2807 G Gate D Drain Standard Pack Form Tube S Source Orderable Part Number Quantity 50 AUIRF2807 Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100C ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) 58 75 IDM PD @TC = 25C Pulsed Drain Current Maximum Power Dissipation 280 230 W VGS Linear Derating Factor Gate-to-Source Voltage 1.5 20 W/C V 340 43 23 5.9 -55 to + 175 mJ A mJ V/ns EAS IAR EAR dV/dt TJ TSTG Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Thermal Resistance Symbol RJC RCS RJA 82 A C 300 10 lbf*in (1.1N*m) Parameter Typ. Max. Units Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient --- 0.50 --- 0.65 --- 62 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-09-29 AUIRF2807 Static @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 75 --- --- V VGS = 0V, ID = 250A --- 0.074 --- V/C Reference to 25C, ID = 1mA --- --- 13 m VGS = 10V, ID = 43A 2.0 --- 4.0 V VDS = VGS, ID = 250A 38 --- --- S VDS = 50V, ID = 43A --- --- 25 VDS = 75 V, VGS = 0V A --- --- 250 VDS = 60V,VGS = 0V,TJ =150C --- --- 100 VGS = 20V nA --- --- -100 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time --- --- --- --- --- --- --- --- --- --- 13 64 49 48 160 29 55 --- --- --- --- LD Internal Drain Inductance --- 4.5 --- LS Internal Source Inductance --- 7.5 --- --- --- --- 3820 610 130 --- --- --- Min. Typ. Max. Units --- --- 82 --- --- 280 --- --- --- --- 100 410 1.2 150 610 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Forward Turn-On Time ton ID = 43A nC VDS = 60V VGS = 10V, See Fig.6 and 13 VDD = 38V ID = 43A ns RG= 2.5 VGS = 10V, See Fig. 10 Between lead, 6mm (0.25in.) nH from package and center of die contact VGS = 0V pF VDS = 25V = 1.0MHz, See Fig. 5 Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = 43A,VGS = 0V ns TJ = 25C ,IF = 43A nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Starting TJ = 25C, L = 370H, RG = 25, IAS = 43A, VGS =10V (See fig. 12) ISD 43A, di/dt 300A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. This is a calculated value limited to TJ = 175C . Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. 2 2017-09-29 AUIRF2807 I D , Drain-to-Source Current (A) TOP BOTTOM 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP I D , Drain-to-Source Current (A) 1000 100 4.5V BOTTOM 100 20s PULSE WIDTH TJ= 25 C 10 0.1 1 10 4.5V 10 100 20s PULSE WIDTH TJ= 175 C 0.1 VDS , Drain-to-Source Voltage (V) TJ = 175 C 100 V DS = 25V 20s PULSE WIDTH 7.0 8.0 VGS , Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 C 6.0 10 100 Fig. 2 Typical Output Characteristics 1000 5.0 1 V DS , Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics 10 4.0 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 9.0 3.0 ID = 71A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 V GS = 10V 0 20 40 60 80 100 120 140 160 180 TJ, Junction Temperature ( C) Fig. 4 Normalized On-Resistance Vs. Temperature 2017-09-29 AUIRF2807 7000 VGS , Gate-to-Source Voltage (V) 6000 C, Capacitance(pF) 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 5000 Ciss 4000 3000 Coss 2000 Crss 1000 12 8 4 0 10 V DS = 60V V DS = 37V V DS = 15V 16 0 1 ID = 43A 100 FOR TEST CIRCUIT SEE FIGURE 13 0 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 1000 100 TJ = 175 C TJ = 25 C 1 V GS = 0 V 0.4 0.8 1.2 1.6 2.0 V SD ,Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 120 160 OPERATION IN THIS AREA LIMITED BY R DS (on) 100 10 0.0 80 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 0.1 40 Q G, Total Gate Charge (nC) 2.4 100sec 10 1msec Tc = 25C Tj = 175C Single Pulse 1 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 2017-09-29 AUIRF2807 100 LIMITED BY PACKAGE ID , Drain Current (A) 80 60 40 Fig 10a. Switching Time Test Circuit 20 0 25 50 75 100 125 TC , Case Temperature 150 175 ( C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10b. Switching Time Waveforms Thermal Response (Z thJC) 1 D = 0.50 0.20 0.1 0.01 0.00001 0.10 PDM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2017-09-29 Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) AUIRF2807 600 500 BOTTOM 400 300 200 100 0 25 50 75 100 125 150 Starting T J, Junction Temperature Fig 12b. Unclamped Inductive Waveforms Fig 13a. Gate Charge Waveform 6 ID 18A 30A 43A TOP 175 ( C) Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 13b. Gate Charge Test Circuit 2017-09-29 AUIRF2807 Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs 7 2017-09-29 AUIRF2807 TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information Part Number AUIRF2807 YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code TO-220AB package is not recommended for Surface Mount Application. 8 2017-09-29 AUIRF2807 Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant 3L-TO-220AB N/A Class M4 (+/- 800V) AEC-Q101-002 Class H1C (+/- 2000V) AEC-Q101-001 Class C5 (+/- 2000V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 9/29/2017 Comments Updated datasheet with corporate template. Corrected typo error on package outline and part marking on page 8. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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