Vishay Siliconix
DG408/409
Document Number: 70062
S-71155–Rev. G, 11-Jun-07
www.vishay.com
1
8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers
FEATURES
• Low On-Resistance - rDS(on): 100 Ω
• Low Charge Injection - Q: 20 pC
• Fast Transition Time - tTRANS: 160 ns
• Low Power - ISUPPLY: 10 µA
• Single Supply Capability
• 44 V Supply Max Rating
• TTL Compatible Logic
BENEFITS
• Reduced Switching Errors
• Reduced Glitching
• Improved Data Throughput
• Reduced Power Consumption
• Increased Ruggedness
• Wide Supply Ranges (± 5 V to ± 20 V)
APPLICATIONS
• Data Acquisition Systems
• Audio Signal Routing
• ATE Systems
• Battery Powered Systems
• High Rel Systems
• Single Supply Systems
• Medical Instrumentation
DESCRIPTION
The DG408 is an 8-channel single-ended analog multiplexer
designed to connect one of eight inputs to a common output
as determined by a 3-bit binary address (A0, A1, A2). The
DG409 is a dual 4-channel differential analog multiplexer
designed to connect one of four differential inputs to a
common dual output as determined by its 2-bit binary
address (A0, A1). Break-before-make switching action
protects against momentary crosstalk between adjacent
channels.
An on channel conducts current equally well in both
directions. In the off state each channel blocks voltages up
to the power supply rails. An enable (EN) function allows the
user to reset the multiplexer/demultiplexer to all switches off
for stacking several devices. All control inputs, address (Ax)
and enable (EN) are TTL compatible over the full specified
operating temperature range.
Applications for the DG408/409 include high speed data
acquisition, audio signal switching and routing, ATE
systems, and avionics. High performance and low power
dissipation make them ideal for battery operated and remote
instrumentation applications.
Designed in the 44 V silicon-gate CMOS process, the
absolute maximum voltage rating is extended to 44 V.
Additionally, single supply operation is also allowed. An
epitaxial layer prevents latchup.
For additional information please see Technical Article
TA201 (FaxBack Number 70600).
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
* Pb containing terminations are not RoHS compliant, exemptions may apply
S3
A0
S6
D
S4
A1
S8
S7
EN
Dual-In-Line
SOIC and TSSOP
A2
V- GND
S1V+
S2S5
Decoders/Drivers
1
2
3
4
5
6
7
16
15
14
13
12
11
10
Top View
89
DG408 Dual-In-Line
SOIC and TSSOP
9
A0
Da
A1
Db
EN GND
V- V+
S1a S1b
S2a S2b
S3a S3b
S4a S4b
Decoders/Drivers
1
2
3
4
5
6
7
16
15
14
13
12
11
10
Top View
8
DG409
Available
Pb-free
RoHS*
COMPLIANT
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Document Number: 70062
S-71155–Rev. G, 11-Jun-07
Vishay Siliconix
DG408/409
TRUTH TABLES AND ORDERING INFORMATION
Logic "0" = VAL ≤ 0.8 V
Logic "1" = VAH ≥ 2.4 V
X = Don’t Care
Notes:
a. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads soldered or welded to PC board.
c. Derate 6 mW/°C above 75 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
f. Derate 10 mW/°C above 75 °C.
TRUTH TABLE - DG408
A2 A
1 A
0 EN On Switch
X X X 0 None
0 0 0 1 1
0 0 1 1 2
0 1 0 1 3
0 1 1 1 4
1 0 0 1 5
1 0 1 1 6
1 1 0 1 7
1 1 1 1 8
TRUTH TABLE - DG409
A1 A
0 EN On Switch
X X 0 None
0 0 1 1
0 1 1 2
1 0 1 3
1 1 1 4
ORDERING INFORMATION - DG408
Temp Range Package Part Number
- 40 to 85 °C
16-Pin Plastic DIP DG408DJ
DG408DJ-E3
16-Pin SOIC
DG408DY
DG408DY-E3
DG408DY-T1
DG408DY-T1-E3
16-Pin TSSOP
DG408DQ
DG408DQ-E3
DG408DQ-T1
DG408DQ-T1-E3
ORDERING INFORMATION - DG409
Temp Range Package Part Number
- 40 to 85 °C
16-Pin Plastic DIP DG409DJ
DG409DJ-E3
16-Pin SOIC
DG409DY
DG409DY-E3
DG409DY-T1
DG409DY-T1-E3
16-Pin TSSOP
DG409DQ
DG409DQ-E3
DG409DQ-T1
DG409DQ-T1-E3
ABSOLUTE MAXIMUM RATINGS
Parameter Limit Unit
Voltages Referenced to V- V+ 44
V
GND 25
Digital Inputsa, VS, VD
(V-) - 2 to (V+) + 2
or 20 mA, whichever occurs first
Current (Any Terminal) 30 mA
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max) 100
Storage Temperature (AK Suffix) - 65 to 150 °C
(DJ, DY Suffix) - 65 to 125
Power Dissipation (Package)b
16-Pin Plastic DIPc450
mW
16-Pin Narrow SOIC and TSSOPd600
16-Pin CerDIPe900
LCC-20f750
Document Number: 70062
S-71155–Rev. G, 11-Jun-07
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Vishay Siliconix
DG408/409
SPECIFICATIONSa
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
VAL = 0.8 V, VAH = 2.4 VfTempb Typc
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C
Unit Mind MaxdMind Maxd
Analog Switch
Analog Signal RangeeVANALOG Full - 15 15 - 15 15 V
Drain-Source
On-Resistance rDS(on) VD = ± 10 V, IS = - 10 mA Room
Full
40 100
125
100
125 Ω
rDS(on) Matching Between ChannelsgΔrDS(on) VD = ± 10 V Room 15 15 %
Source Off Leakage Current IS(off)
VS = ± 10 V
VD = ± 10 V, VEN = 0 V
Room
Full
- 0.5
- 50
0.5
50
- 0.5
- 5
0.5
5
nA
Drain Off Leakage Current ID(off)
VD = ± 10 V
VS = ± 10 V
VEN = 0 V
DG408 Room
Full
- 1
- 100
1
100
- 1
- 20
1
20
DG409 Room
Full
- 1
- 50
1
50
- 1
- 10
1
10
Drain On Leakage Current ID(on)
VS = VD = ± 10
Sequence Each
Switch On
DG408 Room
Full
- 1
- 100
1
100
- 1
- 20
1
20
DG409 Room
Full
- 1
- 50
1
50
- 1
- 10
1
10
Digital Control
Logic High Input Voltage VINH Full 2.4 2.4 V
Logic Low Input Voltage VINL Full 0.8 0.8
Logic High Input Current IAH VA = 2.4 V, 15 V Full - 10 10 - 10 10 µA
Logic Low Input Current IAL VEN = 0 V, 2.4 V, VA = 0 V Full - 10 10 - 10 10
Logic Input Capacitance Cin f = 1 MHz Room 8 pF
Dynamic Characteristics
Transition Time tTRANS See Figure 2 Full 160 250 250
ns
Break-Before-Make Interval tOPEN See Figure 4 Room 10 10
Enable Turn-On Time tON(EN) See Figure 3
Room
Full
115 150
225
150
Enable Turn-Off Time tOFF(EN) Room 105 150 150
Charge Injection Q CL = 10 nF, VS = 0 V Room 20 pC
Off IsolationhOIRR VEN = 0 V, RL = 1 kΩ
f = 100 kHz Room - 75 dB
Source Off Capacitance CS(off) VEN = 0 V, VS = 0 V, f = 1 MHz Room 3
pF
Drain Off Capacitance CD(off) VEN = 0 V
VD = 0 V
f = 1 MHz
DG408 Room 26
DG409 Room 14
Drain On Capacitance CD(on)
DG408 Room 37
DG409 Room 25
Power Supplies
Positive Supply Current I+ VEN = VA = 0 V or 5 V Full 10 75 75 µA
Negative Supply Current I- Full 1 - 75 - 75
Positive Supply Current I+ VEN = 2.4 V, VA = 0 V
Room
Full
0.2 0.5
2
0.5
2mA
Negative Supply Current I- Full - 500 - 500 µA
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Document Number: 70062
S-71155–Rev. G, 11-Jun-07
Vishay Siliconix
DG408/409
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. ΔrDS(on) = rDS(on) MAX - rDS(on) MIN.
h. Worst case isolation occurs on Channel 4 due to proximity to the drain pin.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONSa FOR SINGLE SUPPLY
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
VAL = 0.8 V, VAH = 2.4 VfTempb Typc
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C
Unit Mind MaxdMind Maxd
Analog Switch
Drain-Source
On-Resistancee,f rDS(on) VD = 3 V, 10 V, IS = - 1 mA Room 90 Ω
Dynamic Characteristics
Switching Time of MultiplexeretTRANS VS1 = 8 V, VS8 = 0 V, VIN = 2.4 V Room 180
ns
Enable Turn-On TimeetON(EN) VINH = 2.4 V, VINL = 0 V
VS1 = 5 V
Room 180
Enable Turn-Off TimeetOFF(EN) Room 120
Charge InjectioneQCL = 1 nF, VS = 6 V, RS = 0 Room 5 pC
Document Number: 70062
S-71155–Rev. G, 11-Jun-07
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Vishay Siliconix
DG408/409
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source/Drain Capacitance vs. Analog Voltage
Drain Leakage Current vs. Source/DrainVoltage
Input Switching Threshold vs. Supply Voltage
(pF)CS, D
VANALOG – Analog Voltage (V)
015- 15
0
20
40
80
60
V+ = 15 V
V- = - 15 V
CD(off)
CS(off)
- 10 - 5 5 10
CD(on)
DG408 I
D(on)
, I
D(off)
(pA)
ID
V
D
or V
S
- Drain or Source Voltage (V)
015- 15
- 140
- 60
20
100
60
- 20
- 100
V+ = 15 V
V- = - 15 V
V
S
= -V
D
for I
D(off)
V
D
= V
S(open)
for I
D(on)
DG409 I
D(off)
- 10 - 5 5 10
DG409 I
D(on)
(V)
TH
V
+VSUPPLY (V)
12 2048 16
0.0
0.5
2.0
1.5
1.0
Drain Leakage Current vs. Source/Drain Voltage
(Single 12-V Supply)
Source Leakage Current vs. Source Voltage
Negative Supply Current vs. Switching Frequency
VANALOG – Analog V oltage (V)
(pA)
ID
12010624 8
- 60
- 40
- 20
60
40
0
20
DG408 ID(off)
DG409 ID(off)
DG409 ID(on)
DG408 ID(on)
VS = 0 V for ID(off)
VS = VD for ID(on)
VS - Source Voltage (V)
015- 15
- 10
0
10
20
15
5
- 5
V+ = 15 V
V- = - 15 V
V+ = 12 V
V- = 0 V
- 10 - 5 5 10
IS(off) (pA)
Switching Frequency (Hz)
10 k 10 M 1 0 0 1 k 100 k 1 M
V
SU PPL Y
= ± 15 V
- 100 mA
- 1 mA
- 100 µA
- 10 µA
- 1 µA
- 0.1 µA
- 10 mA
V
EN
= 2.4 V
V
EN
= 0 V or 5 V
I-
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Document Number: 70062
S-71155–Rev. G, 11-Jun-07
Vishay Siliconix
DG408/409
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Positive Supply Current vs. Switching Frequency
Positive Supply Current vs. Temperature (DG408)
rDS(on) vs. VD and Supply
Switching Frequency (Hz)
10 k 10 M100 1 k 100 k 1 M
VSUPPLY = 15 V
100 mA
10 mA
1 mA
100 µA
10 µA
VEN = 2.4 V
VEN = 0 V or 5 V
I+
I+ (µA)
Temperature (°C)
5
15
20
10
125- 55 85455
0
V+ = 15 V
V- = - 15 V
VIN = 0 V
VEN = 0 V
- 35 - 15 25 65 105
r
DS(on) (Ω)
V
D
- Drain V oltage (V)
0
40
100
60
80
120
20
- 20 - 12 - 8 - 4 0 4 8 1 2 1 6 2 0- 16
± 5 V
± 8 V
± 10 V
± 12 V
± 20 V ± 15 V
ISUPPLY vs. Temperature
Charge Injection vs. Analog Voltage
rDS(on) vs. VD and Supply (Single Supply)
I+, I-
Temperature (°C)
125- 55 85 45 5
V
SU PPL Y
= ± 15 V
VA = 0 V
VEN = 0 V
I+
- (I-)
100 µA
1 µA
100 nA
10 nA
1 nA
100 pA
10 pA
10 µA
- 35 - 15 25 65 105
Q (pC)
VS - Source Voltage (V)
- 10
30
50
90
70
40
0
80
60
20
10
015- 15 - 10 - 5 5 10
V+ = 15 V
V- = - 15 V
V+ = 12 V
V- = 0 V
CL = 10000 pF
VIN = 5 Vp-p
r
DS(on)
(Ω)
VD - Drain Voltage (V)
220
0
40
100
60
140
160
80
120
20
4 8 12 16 20
V+ = 7.5 V
10 V
12 V
15 V 20 V
22 V
V- = 0 V
Document Number: 70062
S-71155–Rev. G, 11-Jun-07
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Vishay Siliconix
DG408/409
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
rDS(on) vs. VS and Temperature
Off Isolation and Crosstalk vs. Frequency
Switching Time vs. Bipolar Supply)
r
DS(on)
(Ω)
V
S
- Source V oltage (V)
0 15- 15
0
40
60
80
50
10
70
30
20
V+ = 15 V
V- = - 15 V
125 °C
85 °C
25 °C
- 55 °C
- 10 - 5 5 1 0
- 40 °C
0 °C
(dB)
f - Frequency (Hz)
10 k 10 M
- 30
- 70
- 90
- 50
100 1 k 100 k 1 M
- 110
100 M
- 130
- 150
V+ = 15 V
V- = - 15 V
RL = 1 kΩ
Off-Isolation
Crosstalk
t (ns)
VSUPPLY (V)
75
125
200
150
175
100
tOFF(EN)
tON(EN)
tTRANS
± 10 ± 12 ± 14 ± 16 ± 18 ± 20 ± 22
rDS(on) vs. VS and Temperature (Single Supply)
Insertion Loss vs. Frequency
Switching Time vs. Single Supply
r
DS(on)
(Ω)
V
S
- Source V oltage (V)
12 8 4 0
10
30
50
70
90
11 0
130
V+ = 12 V
V- = 0 V
- 55 °C
- 40 °C
0 °C
125 °C
85 °C
25 °C
26 10
LOSS (dB)
f - Frequency (Hz)
10 M
- 5
- 2
1
- 1
0
- 4
- 3
- 6
V+ = 15 V
V- = - 15 V
Ref. 1 Vrms
RL = 50 Ω
RL = 1 kΩ
10 100 1 k 10 k 100 k 1 M 100 M
t (ns)
VSUPPLY (V)
158
100
150
225
175
200
250
125
91214131110
275
tTRANS
tOFF(EN)
tON(EN)
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Document Number: 70062
S-71155–Rev. G, 11-Jun-07
Vishay Siliconix
DG408/409
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
TEST CIRCUITS
Figure 1.
EN
A0
S1
D
V+
Sn
V-
Decode/
Drive
Level
Shift
V-
V+
VREF
AX
GND
V+
Figure 2. Transition Time
A1
A0
A2
A1
A0
+ 15 V
- 15 V
EN
V+
V-GND
D
35 pF
VO
S1
S2 - S7
S8
50 Ω 300 Ω
± 10 V
± 10 V
+ 15 V
- 15 V
EN
V+
V-GND
35 pF
VO
S1
S1a - S4a, Da
S4b
50 Ω 300 Ω
± 10 V
± 10 V
Db
Logic
Input
Switch
Output
VS8
VO
tTRANS
tr < 20 ns
tf < 20 ns
S8 ONS1 ON
tTRANS
0 V
VS1
50 %
90 %
90 %
3 V
0 V
DG408
DG409
Document Number: 70062
S-71155–Rev. G, 11-Jun-07
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Vishay Siliconix
DG408/409
TEST CIRCUITS
Figure 3. Enable Switching Time
Logic
Input
Switch
Output
VO
tr < 20 ns
tf < 20 ns
3 V
0 V
0 V
tOFF(EN
)
tON(EN)
50 %
90 %
10 %
VO
EN
S1
S2 - S8
A0
A1
A2
50 Ω1 kΩ
VO
V+
GND V- D
- 5 V
35 pF
- 15 V
+ 15 V
S1b
S1a - S4a, Da
S2b - S4b
Db
EN
A0
A1
50 Ω1 kΩ
VO
V+
GND V-
- 5 V
35 pF
- 15 V
+ 15 V
DG408
DG409
Figure 4. Break-Before-Make Interval
50 %
80 %
Logic
Input
Switch
Output
VO
VS
tOPEN
tr < 20 ns
tf < 20 ns
0 V
3 V
0 V
EN V+
GND V-
+ 5 V
35 pF
- 15 V
+ 15 V
+ 2.4 V
A2Db, D
All S and Da
300 Ω
VO
50 Ω
A1
A0DG408
DG409
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Document Number: 70062
S-71155–Rev. G, 11-Jun-07
Vishay Siliconix
DG408/409
TEST CIRCUITS
Figure 5. Charge Injection
A0
EN
A1
A2
VO
V+
GND V-
D
- 15 V
+ 15 V
Rg
SX
CL
10 nF
Channel
Select
3 V
0 V
OFF ON
Logic
Input
Switch
Output
ΔVO
ΔVO is the measured voltage due to charge transfer
error Q, when the channel turns off.
Q = CL x ΔVO
OFF
Figure 6. Off Isolation
Figure 8. Insertion Loss
RL
1 kΩ
VO
V+
GND V-
- 15 V
+ 15 V
A2
D
A1
A0
S8
SX
VS
EN
Rg = 50 Ω
Off Isolation = 20 log
VOUT
VIN
VIN
RL
1 kΩ
A2
VO
D
Rg = 50 Ω
Insertion Loss = 20 log
VOUT
A1
VIN
A0
VSS1
V+
GND V-
- 15 V
+ 15 V
EN
Figure 7. Crosstalk
Figure 9. Source Drain Capacitance
RL
1 kΩ
VO
V+
GND V-
- 15 V
+ 15 V
A2
D
A1
A0
S8
SX
VS
EN
Rg = 50 Ω
Crosstalk = 20 log
VOUT
VIN
VIN S1
f = 1 MHz
S1
D
EN
+ 15 V
- 15 V
GND
V+
V-
Meter
HP4192A
Impedance
Analyzer
or Equivalent
S8
A1
A2
A0
Channel
Select
Document Number: 70062
S-71155–Rev. G, 11-Jun-07
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Vishay Siliconix
DG408/409
APPLICATIONS HINTS
Overvoltage Protection
A very convenient form of overvoltage protection consists of
adding two small signal diodes (1N4148, 1N914 type) in
series with the supply pins (see Figure 10). This
arrangement effectively blocks the flow of reverse currents.
It also floats the supply pin above or below the normal V+ or
V- value. In this case the overvoltage signal actually
becomes the power supply of the IC. From the point of view
of the chip, nothing has changed, as long as the difference
VS - (V-) doesn’t exceed + 44 V. The addition of these diodes
will reduce the analog signal range to 1 V below V+ and 1 V
above V-, but it preserves the low channel resistance and low
leakage characteristics.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70062.
Figure 10. Overvoltage Protection Using Blocking Diodes
1N4148
DG408
D
V-
V+
1N4148
SX
Vg
Figure 11.
EN
A
0
A
1
+ 15 V
(MUX On-Off Control)
Analog
Inputs
(Outputs)
Clock
In
NC
Enable In
Analog
Output
(Input)
+ 15 V - 15 V
DG408
D
EN
GND
DM7493
V+ V-
NC
GND
+ 15 V
Analog
Inputs
(Outputs)
Analog
Outputs
(Inputs)
+ 15 V - 15 V
DG409
GNDV+ V-
Differential Differential
Clock
In
NC
GND
+ 15 V
NC
6
Reset Enable
J
K
CLK
J
K
CLK
CLEAR CLEAR
Q
S
5
S
7
S
6
S
8
S
1
S
3
S
2
S
4
S
1a
S
3a
S
2a
S
4a
S
1b
S
3b
S
2b
S
4b
D
a
D
b
A
0
A
1
A
2
B
IN
A
IN
r
01
r
02
Q
B
Q
C
Q
D
Q
A
1/2 MM74C73 1/2 MM74C73
Q
Q
Q
8-Channel Sequential Multiplexer/Demultiplexer Differential 4-Channel Sequential Multiplexer/Demultiplexer
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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All product specifications and data are subject to change without notice.
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therein, which apply to these products.
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