MSD200
MSD200-Rev 1 www.microsemi.com
Dec, 2009 1/4
Module Type
TYPE VRRM VRSM
MSD200 – 08
MSD200 – 12
MSD200 – 16
MSD200 – 18
800V
1200V
1600V
1800V
900V
1300V
1700V
1900V
Maximum Ra tings
Symbol Conditions Values Units
ID Tc=100℃ 200 A
IFSM t=10mS Tv
j
=45℃2240 A
i2t t=10mS Tv
j
=45℃25000 A2s
Visol a.c.50Hz;r.m.s.;1min 3000 V
Tvj -40 to 150 ℃
Tstg -40 to 125 ℃
Mt To terminals(M6) 5±15% Nm
Ms To heatsink(M6) 5±15% Nm
Weight Module 230 g
Thermal Charac teristics
Symbol Conditions Values Units
Rth(j-c) Per diode 0.45 ℃
/
W
Rth(c-s) Module 0.025
℃
/
W
Electrical Characteristics
Circuit
Glass Passivated Three
Phase Rectifier Bridge
VRRM 800 to 1800V
ID 200 Amp
Features
y Three phase bridge rectifier
y Blocking voltage: 800 to 1800V
y Heat transfer through aluminum oxide DCB
ceramic isolated metal baseplate
y Glass passivated chip
Applications
y Three phase rectifiers for power supplies
y Rectifiers for DC motor field supplies
y Battery charger rectifiers
yIn
p
ut rectifiers for variable fre
q
uenc
y
drives
-
+
~
~
~
MSD
Symbol Conditions Values Units
VFM T=25℃ IFM =300A 1.55 V
IRD Tvj =25℃ VRD=VRRM
Tvj =150℃ VRD=VRRM
≤0.3
≤5
mA
mA
MSD200
MSD200-Rev 1 www.microsemi.com
Dec, 2009 2/4
Performance Curves
Fig1. Forward Characteristics
Fig3. Transient thermal impedance
Fi
g
2. Power dissi
p
ation
Fig4. Max Non-Repetitive Forward Surge
Current
Fig5.Forward Current Derating Curve
Zth(j-C)
Typ.
25℃
125℃
IF
400
A
300
200
100
0
0 VF 0.5 1.0 1.5 2.0 V
0.001 0.01 0.1 1 10 100 S
1 10 cycles 100
0 Tc 50 100 150 °C
250
A
200
150
0
100
50
ID
50Hz
0.5
℃/ W
0
0.25
2250
1500
750
0
3000
A
W
0
480
240
Pvtot
0 ID 100 200 A
MSD200
MSD200-Rev 1 www.microsemi.com
Dec, 2009 3/4
Package Outline Information
CASE-M3
Dimensions in mm
