1
IPA80R900P7
Rev.2.2,2020-01-27Final Data Sheet
PG-TO220FP
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
*1
*2
*1: Internal body diode
*2: Integrated ESD diode
MOSFET
800VCoolMOSªP7PowerDevice
Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V
superjunctiontechnologiesandcombinesbest-in-classperformancewith
stateoftheartease-of-use,resultingfromInfineon’sover18years
pioneeringsuperjunctiontechnologyinnovation.
Features
•Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss
•Best-in-classDPAKRDS(on)
•Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V
•IntegratedZenerDiodeESDprotection
•Fullyqualifiedacc.JEDECforIndustrialApplications
•Fullyoptimizedportfolio
Benefits
•Best-in-classperformance
•Enablinghigherpowerdensitydesigns,BOMsavingsandlower
assemblycosts
•Easytodriveandtoparallel
•BetterproductionyieldbyreducingESDrelatedfailures
•Lessproductionissuesandreducedfieldreturns
•Easytoselectrightpartsforfinetuningofdesigns
Potentialapplications
RecommendedforhardandsoftswitchingflybacktopologiesforLED
Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand
Industrialpower.AlsosuitableforPFCstageinConsumerapplications
andSolar.
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj=25°C 800 V
RDS(on),max 0.90 Ω
Qg,typ 15 nC
ID6 A
Eoss @ 500V 1.4 µJ
VGS(th),typ 3 V
ESD class (HBM) 2 -
Type/OrderingCode Package Marking RelatedLinks
IPA80R900P7 PG-TO 220 FullPAK 80R900P7 see Appendix A
2
800VCoolMOSªP7PowerDevice
IPA80R900P7
Rev.2.2,2020-01-27Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3
800VCoolMOSªP7PowerDevice
IPA80R900P7
Rev.2.2,2020-01-27Final Data Sheet
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID-
-
-
-
6
3.9 ATC=25°C
TC=100°C
Pulsed drain current2) ID,pulse - - 14 A TC=25°C
Avalanche energy, single pulse EAS - - 13 mJ ID=0.9A; VDD=50V
Avalanche energy, repetitive EAR - - 0.11 mJ ID=0.9A; VDD=50V
Avalanche current, repetitive IAR - - 0.9 A -
MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0to400V
Gate source voltage VGS -20
-30
-
-
20
30 Vstatic;
AC (f>1 Hz)
Power dissipation Ptot - - 26 W TC=25°C
Operating and storage temperature Tj,Tstg -55 - 150 °C -
Mounting torque - - - 50 Ncm M2.5 screw
Continuous diode forward current IS- - 3.3 A TC=25°C
Diode pulse current2) IS,pulse - - 14 A TC=25°C
Reverse diode dv/dt3) dv/dt - - 1 V/ns VDS=0to400V,ISD<=1.1A,Tj=25°C
Maximum diode commutation speed3) dif/dt - - 50 A/µsVDS=0to400V,ISD<=1.1A,Tj=25°C
Insulation withstand voltage VISO - - 2500 V Vrms,TC=25°C,t=1min
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 4.8 °C/W -
Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded
Thermal resistance, junction - ambient
for SMD version RthJA - - - °C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads Tsold - - 260 °C 1.6 mm (0.063 in.) from case for 10s
1) TO220 equivalent. Limited by Tj max. Maximum duty cycle D=0.5
2) Pulse width tp limited by Tj,max
3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG;tcond<2µs
4
800VCoolMOSªP7PowerDevice
IPA80R900P7
Rev.2.2,2020-01-27Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 800 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 2.5 3 3.5 V VDS=VGS,ID=0.11mA
Zero gate voltage drain current IDSS -
-
-
10
1
-µAVDS=800V,VGS=0V,Tj=25°C
VDS=800V,VGS=0V,Tj=150°C
Gate-source leakage curent incl. zener
diode IGSS - - 1 µA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
0.77
1.99
0.90
-ΩVGS=10V,ID=2.2A,Tj=25°C
VGS=10V,ID=2.2A,Tj=150°C
Gate resistance RG- 1.4 - Ωf=250kHz,opendrain
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 350 - pF VGS=0V,VDS=500V,f=250kHz
Output capacitance Coss - 6 - pF VGS=0V,VDS=500V,f=250kHz
Effective output capacitance, energy
related1) Co(er) - 11 - pF VGS=0V,VDS=0to500V
Effective output capacitance, time
related2) Co(tr) - 135 - pF ID=constant,VGS=0V,VDS=0to500V
Turn-on delay time td(on) - 12 - ns VDD=400V,VGS=13V,ID=2.2A,
RG=15Ω
Rise time tr- 8 - ns VDD=400V,VGS=13V,ID=2.2A,
RG=15Ω
Turn-off delay time td(off) - 40 - ns VDD=400V,VGS=13V,ID=2.2A,
RG=15Ω
Fall time tf- 20 - ns VDD=400V,VGS=13V,ID=2.2A,
RG=15Ω
Table6Gatechargecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 2 - nC VDD=640V,ID=2.2A,VGS=0to10V
Gate to drain charge Qgd - 6 - nC VDD=640V,ID=2.2A,VGS=0to10V
Gate charge total Qg- 15 - nC VDD=640V,ID=2.2A,VGS=0to10V
Gate plateau voltage Vplateau - 4.5 - V VDD=640V,ID=2.2A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to500V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to500V
5
800VCoolMOSªP7PowerDevice
IPA80R900P7
Rev.2.2,2020-01-27Final Data Sheet
Table7Reversediodecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=2.2A,Tf=25°C
Reverse recovery time trr - 610 - ns VR=400V,IF=1.1A,diF/dt=50A/µs
Reverse recovery charge Qrr - 5 - µC VR=400V,IF=1.1A,diF/dt=50A/µs
Peak reverse recovery current Irrm - 11 - A VR=400V,IF=1.1A,diF/dt=50A/µs
6
800VCoolMOSªP7PowerDevice
IPA80R900P7
Rev.2.2,2020-01-27Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 25 50 75 100 125 150
0
5
10
15
20
25
30
Ptot=f(TC)
Diagram2:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-3
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-3
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-5 10-4 10-3 10-2 10-1 100
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
7
800VCoolMOSªP7PowerDevice
IPA80R900P7
Rev.2.2,2020-01-27Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
2
4
6
8
10
12
14
16
18 20 V 10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
2
4
6
8
10
12
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on)[Ω]
0 5 10 15
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5 V 5.5 V 6 V
6.5 V
7 V
10 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[Ω]
-50 -25 0 25 50 75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
98%
typ
RDS(on)=f(Tj);ID=2.2A;VGS=10V
8
800VCoolMOSªP7PowerDevice
IPA80R900P7
Rev.2.2,2020-01-27Final Data Sheet
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A]
0 2 4 6 8 10 12
0
2
4
6
8
10
12
14
16
25 °C
150 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS[V]
0 5 10 15
0
1
2
3
4
5
6
7
8
9
10
120 V 640 V
VGS=f(Qgate);ID=2.2Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.5 1.0 1.5 2.0 2.5
10-1
100
101
102
25 °C
125 °C
IF=f(VSD);parameter:Tj
Diagram12:Avalancheenergy
Tj[°C]
EAS[mJ]
25 50 75 100 125 150
0
2
4
6
8
10
12
14
EAS=f(Tj);ID=0.9A;VDD=50V
9
800VCoolMOSªP7PowerDevice
IPA80R900P7
Rev.2.2,2020-01-27Final Data Sheet
Diagram13:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-75 -50 -25 0 25 50 75 100 125 150 175
700
750
800
850
900
950
VBR(DSS)=f(Tj);ID=1mA
Diagram14:Typ.capacitances
VDS[V]
C[pF]
0 100 200 300 400 500
10-1
100
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=250kHz
Diagram15:Typ.Cossstoredenergy
VDS[V]
Eoss[µJ]
0 100 200 300 400 500 600 700 800
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Eoss=f(VDS)
10
800VCoolMOSªP7PowerDevice
IPA80R900P7
Rev.2.2,2020-01-27Final Data Sheet
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform
VDS
IF
Rg1
Rg 2
Rg1 = Rg 2
Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)
tr
ton
tf
toff
10%
90%
VDS
VGS
Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
ID
VDS
VDS
ID
11
800VCoolMOSªP7PowerDevice
IPA80R900P7
Rev.2.2,2020-01-27Final Data Sheet
6PackageOutlines
DIMENSIONS MIN. MAX.
A2
H
b
D
c
b2
E
e
L
Q
øP
L1
D1
A
A1
2.862.42
2.54
28.70
0.95
15.67
0.40
0.65
10.00
2.83
3.15
3.00
12.78
8.97
29.75
0.90
0.63
1.51
16.15
3.50
3.30
3.45
13.75
10.65
9.83
MILLIMETERS
4.50
2.34
4.90
2.85
b1 0.95 1.38
b4 0.65 1.51
b3 0.65 1.38
1
SCALE
Z8B00003319
REVISION
ISSUE DATE
EUROPEAN PROJECTION
10
21.03.2019
05mm
DOCUMENT NO.
5:1
2 3 4
1 2 3
Figure1OutlinePG-TO220FullPAK,dimensionsinmm
12
800VCoolMOSªP7PowerDevice
IPA80R900P7
Rev.2.2,2020-01-27Final Data Sheet
7AppendixA
Table11RelatedLinks
•IFXCoolMOSWebpage:www.infineon.com
•IFXDesigntools:www.infineon.com
13
800VCoolMOSªP7PowerDevice
IPA80R900P7
Rev.2.2,2020-01-27Final Data Sheet
RevisionHistory
IPA80R900P7
Revision:2020-01-27,Rev.2.2
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2017-03-21 Release of final version
2.1 2018-02-07 Corrected front page text
2.2 2020-01-27 Updated package drawing, symbol ID and product validation
Trademarks
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Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(“Beschaffenheitsgarantie”).
Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe
product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation
warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis
documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe
productofInfineonTechnologiesincustomer’sapplications.
Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s
technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct
informationgiveninthisdocumentwithrespecttosuchapplication.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.