=a oS ne el July 1997 8 | FAIRCHILD 6 SEMICONDUCTOR m a Lt | FDC6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field " 25, 0.22 A continuous, 0.5 A Peak. effect transistors are produced using Fairchild s proprietary, Rosion = 5 2 @ Veg= 2.7 V high cell density, DMOS technology. This very high density Rosiony = 422 @ Veg? 4.5 V. process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage = Very low level gate drive requirements allowing direct applications as a replacement for digital transistors. Since bias operation in 3V circuits. Vou, < 1-5V. resistors are not required, these N-Channel FET's can replace several digital transistors, with a variety of bias resistors. . Sale Source Body Model ruggedness. * * e - na SuperSOT-6 Mark: 301 INVERTER APPLICATION Veo Dt G2 [4 (5. [6 pin1- G1 SuperSOT-6 Absolute Maximum Ratings 1, = 25C unless other wise noted Symbol | Parameter FDC6301N Units Vosg: Vee | Drain-Source Voltage, Power Supply Voltage 25 Vv Voss: Vin | Gate-Source Voltage, V,, 8 bo lout Drain/Output Current - Continuous 0.22 A - Pulsed 0.5 P, Maximum Power Dissipation {Note 1a} 0.9 WwW (Note 1b) 07 T,,Tsrg | Operating and Storage Temperature Range -55 to 150 c ESD Electrostatic Discharge Rating MIL-STD-883D 6.0 kV Human Body Model (100pf/ 1500 Ohm) THERMAL CHARACTERISTICS Raa Thermal Resistance, Junction-to-Ambient (Note 1a) 140 CW Rac Thermal Resistance, Junction-to-Case (Note 1) 60 CMW 5-48 FDC6301N Rev.cElectrical Characteristics (1, = 25C unless otherwise noted ) a Symbol | Parameter Conditions | Min | Typ Max | Units 2 OFF CHARACTERISTICS w BV oes Drain-Source Breakdown Voltage Veg = OV, >= 250 pA 25 V 2 ABV AT, | Breakdown Voltage Temp. Coefficient |,= 250 pA, Referenced to 25C 25 mV fC = loss Zero Gate Vottage Drain Current Vos =20-V, Vag= OV 1 yA T, =55C 10 pA less Gate - Body Leakage Current Vog =8V, Vaz OV 100 nA ON CHARACTERISTICS (noie 2) AV ecu AT, Gate Threshold Voltage Temp.Coefficient |= 250 YA, Referenced to 25C 2.1 mV fC Vesey Gate Threshold Voltage Vos = Vag: |p = 250 uA 065 | 085 | 15 v Bosom Static Drain-Source On-Resistance Veg = 2.7 V, 1, =0.2A 3.8 5 Q T, =125C 63 Veg =45V, L=04A 3.4 lyon On-State Drain Current Vog = 2.7 V, Vog5=5V 0.2 Oks Forward Transconductance Vog=5V, I= O4A 0.25 S DYNAMIC CHARACTERISTICS C., input Capacitance Vog= 10 V, Veg = OV, 9.5 pF C... Output Capacitance f= 1.0 MHz 6 pF C.. Reverse Transfer Capacitance 13 pF SWITCHING CHARACTERISTICS (noe 2) tien) Tum - On Delay Time Vip =6V, |) =0.5A, 5 10 ns t Tum - On Rise Time Veg = 4.5 V, Reey = 50.Q 45 10 ns boon Tum - Off Delay Time 4 8 ns t Turn - Off Fall Time 3.2 7 ns Q, Total Gate Charge Vag =5V, 1, = 0.2 A, 0.49 | 07 nc Q., Gate-Source Charge Veg =45V 0.22 nc Qa Gate-Drain Charge 0.07 nc InverterElectricalCharacteristics (1, = 25C unless otherwise noted) Loe Zero Input Voltage Output Current Vog = 20 V, Vi=0V 1 HA Vi ot) Input Voltage Veo = SV, I= 10 pA 0.5 Vv Vi ter) V, =0.3 V, |, = 0.005 A 1 V Ro con Output to Ground Resistance V=27V, =02A 3.8 5 Q Th is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R,,,.s guaranteed by design while A,,.., is determined by the user's board design. R,,,, shown below for single device operation on FR-4 in stil air. a bon coos 0.125 in? pad of I b. ween on 2 0.008 in of pad ! Soo & I 2. Pulse Test: Pulse Width < 300s, Duty Cycle s 2.0%. 5-49 FDC6301N Rev.CFDC6301N Typical Electrical Characteristics 0.5 , DRAIN-SOURCE CURRENT {A) 2 ny we = D R DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE, 3 1 2 3 1 5 a) 04 0.2 0.3 04 08 Vpg : ORAIN-SOURCE VOLTAGE (V) I, . ORAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 15 | T . = 25C 1p =0.2A oo Lz az 3 2 {t Nb w 125C z @ Zz at gs \ 26 a => WwW iw z8 z 6 BS z NX : a5 3 | g } g ~~ g a a 50 -25 0 25 50 75 100 125 150 2 2.5 3 3.5 4 45 5 T, . JUNCTION TEMPERATURE (C) Yes , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with with Temperature Gate-To Source Voltage. 02 - os Ts: - Vos = 5.0V y 7 58S rf. y < 0.2 ots i 125C 5 04 go. = ~ # a 5 Z 0.01 3 O1 s Zz a z 6 a 6 0.05 0.001 ~ wu oe 9 0.0004 os 1 15 2 25 0.2 04 06 0.8 1 1.2 Vg GATE TO SOURCE VOLTAGE (V) Vgp BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 5-50 FDC6301N Rev.CTypical Electrical Characteristics (continued) on 30 20 + N oe CAPACITANCE (pF) on Ves , GATE-SOURCE VOLTAGE (V) 0 Ot 0s 1 2 5 10 25 0 0.1 02 0.3 0.4 05 0.6 Vug ORAIN TC SOURCE VOLTAGE (V} Q, . GATE CHARGE (nC) Figure 7 Gate Charge Characteristics. Figure 8 Capacitance Characteristics. 1 5 0.5 z 4 SINGLE PULSE 5 Rava=See nate 1b Z 02 = Ta= 25C =3 x or 3 01 ivy] z Ss < 92 & 0.05 Ves = 2.7V a SINGLE PULSE ' 0.02 | Rasa =See note 1b Taz 25C 0.01 0 0.5 1 2 5 10 15 25 35 0.01 0.1 1 10 100-300 Vos DRAI N-SOURCE VOLTAGE {V) Figure 9. Maximum Safe Operating Area. 0.5 0.2 0.1 0.05 0.01 Single r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.001 0.01 0.1 14, TIME (sec) 0.01 0.0001 SINGLE PULSE TIME (SEC) Figure 10 Single Pulse Maximum Power Dissipation. Rua (= rt) * Raa R gua = See Note 1b Pipky | bat ty : op Ty Ty =P TR galt) Duty Cycle, O=t ,/t 5 100 4 10 300 Figure 11. Transient Thermal Response Curve . Note: Thermat characterization performed using the conditions described in note 1b. Transient thermal response will change depending on the circuit board design, 5-51 FOC6301N Rev.C NlLOe90dS