FREQUENCY MULTIPLIERS - ACTIVE - CHIP
2
2 - 1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC814
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 13 - 24.6 GHz OUTPUT
v00.1109
General Description
Features
Functional Diagram
Electrical Specications, TA = +25 °C, Vdd1, Vdd2 = +5V, +4 dBm Drive Level
Typical Applications
The HMC814 is ideal for:
• Clock Generation Applications:
SONET OC-192 & SDH STM-64
• Point-to-Point & VSAT Radios
• Test Instrumentation
• Military & Space
• Sensors
The HMC814 is a x2 active broadband frequency
multiplier chip utilizing GaAs PHEMT technology.
When driven by a +4 dBm signal, the multiplier
provides +17 dBm typical output power from 13 to
24.6 GHz. The Fo, 3Fo and 4Fo isolations are >20
dBc at 19 GHz. The HMC814 is ideal for use in LO
multiplier chains for Pt-to-Pt & VSAT Radios yielding
reduced parts count vs. traditional approaches. The
low additive SSB Phase Noise of -136 dBc/Hz at
100 kHz offset helps maintain good system noise
performance. All data is taken with the chip connected
via two 0.025mm (1 mil) wire bonds of minimal length
0.31 mm (12 mils).
High Output Power: +17 dBm
Low Input Power Drive: 0 to +6 dBm
Fo Isolation: >20 dBc @ Fout = 19 GHz
100 kHz SSB Phase Noise: -136 dBc/Hz
Single Supply: +5V @ 88mA
Die Size: 1.2 x 1.23 x 0.1 mm
Parameter Min. Typ. Max. Units
Frequency Range, Input 6.5 - 12.3 GHz
Frequency Range, Output 13.0 - 24.6 GHz
Output Power 14 17 dBm
Fo Isolation (with respect to output level) 25 dBc
3Fo Isolation (with respect to output level) 25 dBc
Input Return Loss 7 dB
Output Return Loss 7 dB
SSB Phase Noise (100 kHz Offset @ Input Frequency = 19 GHz) -136 dBc/Hz
Supply Current (Idd1 & Idd2) 70 88 100 mA
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
FREQUENCY MULTIPLIERS - ACTIVE - CHIP
2
2 - 2
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Output Power vs.
Temperature @ +4 dBm Drive Level
Output Power vs.
Supply Voltage @ +4 dBm Drive Level
Output Power vs. Drive Level
Output Power vs. Input Power
Isolation @ +4 dBm Drive Level
HMC814
v00.1109
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 13 - 24.6 GHz OUTPUT
0
4
8
12
16
20
12.5 14.5 16.5 18.5 20.5 22.5 24.5 26.5
+25C
+85C
-55C
OUTPUT POWER (dBm)
FREQUENCY (GHz)
-25
-15
-5
5
15
25
12.5 14.5 16.5 18.5 20.5 22.5 24.5 26.5
0 dBm
1 dBm
2 dBm
3 dBm
4 dBm
5 dBm
6 dBm
OUTPUT POWER (dBm)
FREQUENCY (GHz)
0
4
8
12
16
20
12.5 14.5 16.5 18.5 20.5 22.5 24.5 26.5
4.5V
5.0V
5.5V
OUTPUT POWER (dBm)
FREQUENCY (GHz)
-30
-20
-10
0
10
20
12.5 14.5 16.5 18.5 20.5 22.5 24.5 26.5
Fo
2 Fo
3 Fo
4 Fo
OUTPUT POWER (dBm)
FREQUENCY (GHz)
0
5
10
15
20
0 1 2 3 4 5 6 7 8 9 10
15 GHz
19 GHz
23 GHz
24 GHz
OUTPUT POWER (dBm)
INPUT POWER (dBm)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
FREQUENCY MULTIPLIERS - ACTIVE - CHIP
2
2 - 3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Phase Noise @ 19 GHz
HMC814
v00.1109
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 13 - 24.6 GHz OUTPUT
-30
-25
-20
-15
-10
-5
0
6 7 8 9 10 11 12 13
+25C
+85C
-55C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
12.5 14.5 16.5 18.5 20.5 22.5 24.5 26.5
+25C
+85C
-55C
RETURN LOSS (dB)
FREQUENCY (GHz)
Absolute Maximum Ratings
RF Input (Vdd = +5V) +10 dBm
Supply Voltage (Vdd1, Vdd2) +5.5 Vdc
Channel Temperature 175 °C
Continuous Pdiss (T= 85 °C)
(derate 8.7 mW/°C above 85 °C) 782 mW
Thermal Resistance
(channel to die bottom) 115 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
Typical Supply Current vs. Vdd
Vdd (Vdc) Idd (mA)
4.5 87
5.0 88
5.5 89
Note:
Multiplier will operate over full voltage range shown above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
-170
-150
-130
-110
-90
-70
-50
-30
-10
102103104105106107108
PHASE NOISE (dBc/Hz)
FREQUENCY (Hz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
FREQUENCY MULTIPLIERS - ACTIVE - CHIP
2
2 - 4
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Outline Drawing
HMC814
v00.1109
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 13 - 24.6 GHz OUTPUT
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BOND PAD METALIZATION: GOLD
5. BACKSIDE METALIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
8. OVERALL DIE SIZE ±.002”
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
FREQUENCY MULTIPLIERS - ACTIVE - CHIP
2
2 - 5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC814
v00.1109
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 13 - 24.6 GHz OUTPUT
Pin Number Function Description Interface Schematic
1 RFIN Pin is AC coupled
and matched to 50 Ohms.
2, 3 Vdd1, Vdd2 Supply voltage 5V ± 0.5V. External bypass capacitors
of 100 pF, 1,000 pF and 2.2 µF are recommended.
4 RFOUT Pin is AC coupled
and matched to 50 Ohms.
Pin Description
Assembly Diagram
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
FREQUENCY MULTIPLIERS - ACTIVE - CHIP
2
2 - 6
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC814
v00.1109
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 13 - 24.6 GHz OUTPUT
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the
surface of the substrate. One way to accomplish this is to attach the 0.102mm
(4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab)
which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order
to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3
mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12
mils) is recommended to minimize inductance on RF, LO & IF ports.
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer
capacitor (mounted eutectically or by conductive epoxy) placed no further than
0.762mm (30 Mils) from the chip is recommended.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The
mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool
temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT
expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should
be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire 3 mil Ribbon Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Ribbon Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
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