SMOS B bye wel ita ASIC A. Seika Epson Affilize PRELIMINARY SLASOOOF Series med Oe ea June 1996 @ DESCRIPTION The 3-MGS SLASOOOF series isa family of sea-of-gates 0.46 micron gate arrays. The series consists of 6 arrays ranging fram 2,764 to 44,070 usable gates and from 36 to 256 1/0. This series also has @ builtin level shifter to prowide dual-power interfacing in various low-voltage applications. Alsa, the micro-ampeare order, low-noise output calls are available for portable equipment and mstruments of Various applications. The arrays are offeredin a wide vartety of packages from 44QFP upto 2560FP. W FEATURES @ Typical 2-inout NAND Gate Delay (F/O =2, Al=2mm} Voltage (V} dV 5.0V tpd (rs) 0.43 0.3 @ Input buffer: 0.97 ns (SV Typ.), 1.08 ne (3.3 Tyo.) @ Output buffer: 3.5 ns (6 Typ), 4.2 ns (3.34 Typ.) (0. = 0 pF @ RAM blocks available (Async 1-2 porth Gual power supples supported with tevel shifters @ Selectable supply voltages (5, 3.3) 8 PROCUCT CONFIGURATION _ Array SLA902F | SLASO4FISLASO7F Si AS09F|SEAS13F|SLAS1SF|SLASD7F /SLAS44F Raw Gate 27a4 | asso | 7a72 | 3540 | 13,144 | 19,350 | 27234 | a4.a70 Ulilization Rate | 65% | 85% | so% | sos | see | se% | som | 5So% Usable Gate 1a09 | oes4 | 4723 | 5724 | 7.220 | 10.842 | 13,617 | 22035 Total PAD sO 100 128 144 160 194 cog =| | BSB i cal ia S-MOS Systeme, lnc. 2460 Norih First Street San Jose, GAGS 31 Tel: (408) 922-0200 Pex: (408) 22-0 ae | 7 |See = PRELIMINARY [7 SMOS June 1986 | A Satin Zpron Agitien ELECTRICAL CHARACTERISTICS AND SPECIFICATIONS OF THE SLAS000F SERIES @ SLASCOOF ABSOLUTE MAXIMUM RATINGS (Veg = OV} Parameter Symbol Limits Unit Power Supply Voltage Voc 3 70310 6.5 V Input Voltage Vi 0,3 to Woo +05 Output Voltage Vis 0.3 t0 Woo +05 V Output GurrentPin Jour 25 (+50"1} mA Storage Femperature Tata 85 to 150 C Note: *1: Applies ta the 24 mA auiput buffer calls B RECOMMENDED OPERATING CONDITIONS FOR THE SLASODOF SERIES Parameter Symbol Min Typ Max Unit Power Supply Voltage Vor 2.70 a.00 a 2.00 a0 3.60 ff Vi 4.75 5.00 5.25 4.50 a0) 5,50 Input Yoltage VE Yes Veo Operating Temperature | Fepr C 25 O C 4D : ao 85 C S405 Sysiems, Inc. "2460 North First Sirest="SanJose, C4 5131 Tei: (408) 922-0006 Fax: M08) 922-0298 BeesSMOS Bo crezimnary Ses A Seiko Epson Asa June 1996 LOOdF Looe | Lagor | LoiaF | LoisF | Leezr | lo4ar BA 100 | t 164 ae | Bbe grat | 4.07 | 7 540 | 1.144 | 19.950 | or.2a4 | 44 Tala! 2Baa | 4456 | s724 | 7299 | 1n6as | tei? Ut ates pode) on al Flquings leod frome dearer [Pd bl be pare Me Mb iy een! | Pied Do alee A: Neo ee dr eeaioled Squaes sod fom: orelpmal] Shade TS qvallable |Ms Lees Chatbens. Peeae so check Lass) Fron Sock. | "AB BST TS, a en ee Elio (abeliqn eadiime: Simson! Deuces sestess eke Dees 4c a ack 4: Dino! Development Esta S-MOS Systems, Inc. +2460 North First Street= San Jose, 2495131 Tel: (408) 922-0200 Fax: (408) 929-0238ei ee dune 19596 PRELIMINARY B PROPAGATION DELAY TIMES Tha progagation delay values printed in cur cell [ibraries and used in simulation are denved fram actual measurements of silicon, net spice simulations. The measured coefficient parameters are: 10% Factor Vottage: 4.50 io 5.50 Volts Jemperature =40 to 85C ma 5. & TEM & a Sethe Figen Lfllace Rest Case (10%) Worst Case (1056) Name Function (From| Te ipln ms) | tphl (ns) | tpih (ns) iphl (ns) Leads py At 2-InbutMand | In| | Out 0.364 0.055 0.208 0.779 0 0.083 0.083 0.325 0.273 1 0.135 Odie 0.441 1.357 2 Nie 2-lput Nor In | Gut O.O85 O.054 O27F 0.175 0 0.150 ore 6.491 0.250 1 O.216 0.081 0-705 0.206 a [NT 1X Inverter in | Out D.O57 0.044 Ot Ff 0.149 0 Cb OS OCH O.298 0203 1 O127 0.080 o.412 6262 2 iM 4xinverter : In | Gut O04 0.024 O.154 0.110 h i 0.050 0.038 0.164 0.126 1 0.059 O04 0.794 H.142 z= DF D Flip-Flop |GLK| a 0.496 0.538 1,603 1.746 0 0.591 0.557 1.723 1,809 t 0. 566 576 1.838 1.672 2 FAT TTL Level i | (ut 0.251 OST? Leda 1223 0 Input Buffer th.2H1 OSE 0.214 1201 1 Ch O40) 1.879 1258 z POVIAT | 2mAQuiput | in | Pad 1.598 1.055 5.155 3.459 10pF i + UO Driver 5.028 743 16.413 3.900 50pF Of oo 4.541 S0.223 15.703 TOOpF POVIAT | mA Cutout In | Pad 0.875 OF? 2.808 2.502 TOpF + UDG Driver 2.018 1.609 6.546 ed 5OpF 3446 2.656 418106: 8.674 TOOpF Best Case Worst Case Temperature = 0 Ambient Temperature = FOC Ambient Supply Vottage = 5 254 Supply Voltage = 4.75 Propess = Best Case Process = Worst Case -MOS Sysiems, Inc. 2460 Norih First Street San Jose, CASS131 The values are based on simple delay mode| without interconnect load capacitance. Tel: (408) $22-Ce0O Fax: (4081 922-058SMOS HB orreiimnary Sat: A Sethe Bpson affilicee June 1996 | @ ELETRICAL CHARACTERISTICS DATA 5.0 Operation Output Current Characteristies (SV 21056) Output current TYPE number 15H (mA) | IOLtmA) TYPES ~0.1 0.1 TYPE 1 1 2 TYPE 2 -3 6 TYPE 3 - 12 TYPE 4 -12 { 24 The alphanumence of lhe TYPE* (5, &4, 1-4) indicate the outpul cell names [x*x}, Propagation Delay Characteristics 2.0 I | L 1.3 I 1 I i ; fa=29C Ta =25O 18: Vor = 50 1-2 Woo = 5.0 J L tod = 1.0 i 1 Ler! | 26 | 5 51a ee a g \ 2 | tA r = 10 12 ia 99 | 4 1} 10 = 0.8 | ! a8 i | aT: | i 1 z a 4 5 G -60 =89 -20 0 eo 40 60 60 100 120 Voot) Taro) Propagation delay (tpd) vs. supply voHage (Voo}) = Propagation delay (tea) vs. ambient temperature (Te) Output current TYPE number | oH (may | IOL (mA) TYPE a . Ou TYPE 1 -j 2 TYPE 2 -2 | 4 TYPE 2 4 8 TYPE 4 -B | 12 |The alphanumerics af the TYPE* CS, M, 1-4} indicate ihe autout cell names box"), SagUN S-MOS Systerns, nc. 2460 North First Street San Jose, CA 95191 Tel (408) 922-1200 Fax-(408) 822-0238 Elbad Fee PRELIMINARY [i] S-MOS A Seiko Epam Agfilize June 19965 @ GATE ARRAY DEVELOPMENT FLOW Dasign Yaritication Customer Site S-4MOS Site Training TEAM) Schematic Capture Schematic. Capiure __$ fe EAC & DRO ae ERG & DRC ! e| | Logic Simulation i Logit Slrauiadan Timing Verification | Timing Vertication Fault Grading Place & Route Customer Signctt je Post Houle Simulalian Test Tape Generation Fdask Generadion Fabrication Assembly & Past ' Prototypes FEB s-k:08 Syste 08) 022-0200+Fax:(408)922-c008 EES ms, (ne, * 2460 Noh First Street-Santose, OA 95127 Ted: (408) 920-0000 Fam: (408) 922-0238SMOS RR opreviminary SC: 2 Y 3 TE MS A Sako Ebsen Agfifie June 1996 @ S-MOS CUSTOMER ENGINEERING To help customers inplement their design of S-MOS ASIC's, we offer iraining ai our design centers and al customer sites when required. Vihen a design is started, an S-MO5 engineer is assigned te the project and will remain with the project through its completion. S-MOS angineers wall work with the customer oan design, saftware and other technical issues, When the design files are transferred to 5-MOS, the assigned engi- nee will verfy the design's integrity and prepare it for place and route. The S-MOS Customer Engineering Group provides all technical custamer-support services including: *Pre-Sale Technical Support Software Documentation Customer Training Simulation Support *Design Assistance Tumkey Design Workstation Support *Design Yerfication *Place Route WORKSTATION SUPPORT Schematic capture, electrical rule checking, design rule checking, simulation and timing verifica- | fion are supported on. Verlog, Auklet (PG, WS), ViewLogic, Synopsys, Exampler ae S-MOS Systems, Inc. 2460 North First Street San Jose, CA95131 Tek [408} 922-0200 = Fax: 408) 929-0238June 1996 A Saike Epon Agfiliare Ee RUSS Ss Tee oo eee a Be ot Bab Fer 00) Say aca oF cca SE Soe LA he ear te ere eS a che ae eto hear is aun dpe aion, Ge Og ee So Pe ee Se pn er gees ne es ie, eect, evi Ce Le PA CEPTS. PDS ad Be et VE | Se Le Ls eee THE ke on Se 15 40 Bot en ese A | eer cae BAC unr | 55a Bi Gopyrigh! wR BOE Byes: Ie Proednieea at - 10 8-MOS Systems, Inc. 2460 North Firs] Stree! * San Jose, OA8S731 + Tel: {40 } oe 2-0200+ Fax: (408) 9220239