CAT3200, CAT3200-5 Low Noise Regulated Charge Pump DC-DC Converter FEATURES Constant high frequency (2MHz) operation Thermal overload shutdown protection 100mA output current Low value external capacitors (1F) Regulated output voltage (5V fixed CAT3200-5, Foldback current overload protection Adjustable CAT3200) Shutdown current less than 1A Low quiescent current (1.7mA typ.) CAT3200-5 in low profile (1mm thin) 6-lead Input voltage operation down to 2.7V SOT23 package CAT3200 in MSOP-8 package Soft start, slew rate control APPLICATIONS 3V to 5V boost conversion Local 5V supply from lower rail White LED driver Battery backup systems USB On-The-Go 5V supply Handheld portable devices DESCRIPTION A shutdown control input allows the device to be placed in power-down mode, reducing the supply current to less than 1A. The CAT3200 and CAT3200-5 are switched capacitor boost converters that deliver a low noise, regulated output voltage. The CAT3200-5 gives a fixed regulated 5V output. The CAT3200 has an adjustable output using external resistors. The constant frequency 2MHz charge pump allows small 1F ceramic capacitors to be used. In the event of short circuit or overload conditions, the device is fully protected by both foldback current limiting and thermal overload detection. In addition, a soft start, slew rate control circuit limits inrush current during power-up. Maximum output loads of up to 100mA can be supported over a wide range of input supply voltages (2.7V to 4.5V) making the device ideal for batterypowered applications. The CAT3200-5 is available in a 6-lead, 1mm max thin SOT23 package. The CAT3200 is available in an 8-lead MSOP package. TYPICAL APPLICATION 5V Output CPOS IN CAT3200-5 + 3.3V - ON OFF CNEG 5V OUT VIN VOUT 100mA OUT + 3.3V - ON OFF R1 FB SHDN GND R2 ( R VOUT = 1.27 V 1+ 1 R2 (c) 2005 by Catalyst Semiconductor, Inc. Characteristics subject to change without notice VOUT 100mA CAT3200 SHDN GND CPOS IN 1 ( CNEG VIN Adjustable Output Doc. No. 5002, Rev. I CAT3200/3200-5 ORDERING INFORMATION Part Number Output Voltage Package Package Marking Quantity per Reel CAT3200ES6-5-TE13 5V 6-lead thin SOT23 BJ 3,000 CAT3200TDI-TE13 5V 6-lead thin SOT23, Lead Free LN 3,000 CAT3200EMS8-TE13 Adjustable 8-lead MSOP AATR 2,500 CAT3200ZI-TE13 Adjustable 8-lead MSOP, Lead Free ABDA 2,500 PIN DESCRIPTIONS Designation Description OUT Regulated output voltage. GND Ground reference for all voltages. SHDN Shutdown control logic input (Active LOW) CNEG Negative connection for the flying capacitor. IN Input power supply. CPOS Positive connection for the flying capacitor. FB Feedback to set the output voltage. PGND Power ground. SGND Signal ground. PIN CONFIGURATION 6-lead Thin SOT23 OUT 1 GND 2 SHDN 3 CAT3200-5 Doc. No. 5002, Rev. I 8-pin MSOP 6 CPOS 5 IN 4 CNEG CPOS 1 IN 2 8 OUT 7 FB CAT3200 CNEG 3 6 SHDN PGND 4 5 SGND 2 (c) 2005 by Catalyst Semiconductor, Inc. Characteristics subject to change without notice CAT3200/3200-5 ABSOLUTE MAXIMUM RATINGS Power Dissipation (8-MSOP) ............................. 0.5W VIN, VOUT, SHDN, CNEG, CPOS Voltage .. -0.6V to 6.0V VOUT Short Circuit Duration ......................... Indefinite RECOMMENDED OPERATING CONDITIONS Output Current ................................................ 200mA VIN ................................................................................... 2.7V to 4.5V ESD Protection (HBM) ..................................... 2000V CIN, COUT, CFLY Junction Temperature ...................................... 150C .......................................................................... 1F ILOAD ................................................................................. 0 to 100mA Storage Temperature Range ............. -65C to 160C Ambient Temperature Range ................... -40C to 85C Lead Soldering Temperature (10 sec) ............. 300C Power Dissipation (SOT23-6) ............................ 0.3W ELECTRICAL SPECIFICATIONS Recommended operating conditions unless otherwise specified. CIN, COUT, CFLY are 1F ceramic capacitors and VIN is set to 3.6V. Symbol Parameter Conditions Min Typ Max Units VOUT Regulated Output ILOAD 40mA, VIN 2.7 V ILOAD 100mA, VIN 3.1 V 4.8 5.0 5.2 V VLINE Line Regulation 3.1V VIN 4.5V, ILOAD = 50mA 6 mV VLOAD Load Regulation ILOAD = 10mA to 100mA, VIN = 3.6V 20 mV FOSC Switching Frequency 1.3 2.0 2.6 MHz VR Output Ripple Voltage ILOAD = 100mA CAT3200-5 Only 30 mVp-p Efficiency ILOAD = 50mA, VIN = 3V, CAT3200-5 80 % IGND Ground Current ILOAD = 0mA, SHDN = VIN 1.6 ISHDN Shutdown Input Current ILOAD = 0mA, SHDN = 0V to VIN VFB FB Voltage CAT3200 Only 1.22 IFB FB Input Current CAT3200 Only -50 ROL Open-Loop ILOAD = 100mA, VIN = 3V (Note 1) 10 ILOAD = 0mA, VIN = 3V 0.5 ms 1.27 4 mA 1 A 1.32 V 50 nA Resistance TON VOUT Turn-on time (10% to 90%) VIHSHDN High Detect Shutdown Threshold VILSHDN Low Detect Shutdown Threshold IROUT 0.8 1.3 0.4 V V 30 A Reverse Leakage into OUT pin VOUT = 5V, Shutdown mode (Note 2) 15 ISC Short-circuit Output VOUT = 0V 80 mA TSD Thermal Shutdown 160 C THYST Thermal Hysteresis 20 C Note 1: ROL = (2VIN - VOUT)/IOUT Note 2: In the event of a controlled shutdown, the output will be isolated from the input, but will remain connected to the internal resistor feedback network. This will cause a small level of reverse current to flow back into the device to ground. (c) 2005 by Catalyst Semiconductor, Inc. Characteristics subject to change without notice 3 Doc No. 5002, Rev. I CAT3200/3200-5 TYPICAL PERFORMANCE CHARACTERISTICS (CAT3200-5) 2.2 1.2 1.1 GROUND CURRENT [mA] SHUTDOWN THRESHOLD [V] . TAMB =25C, CInput =COUTThreshold =CFLY=1F,vs. VINSupply =3.3V unless specified otherwise. IN Shutdown Voltage Ground Current vs. Supply Voltage (No Load) 1.0 0.9 0.8 0.7 0.6 0.5 2.0 1.8 1.6 1.4 1.2 0.4 2.7 3.0 3.3 3.6 3.9 4.2 INPUT VOLTAGE [V] 2.7 4.5 Line Regulation 4.2 4.5 5.2 OUTPUT VOLTAGE [V] . OUTPUT VOLTAGE [V] . 3.3 3.6 3.9 INPUT VOLTAGE [V] Load Regulation 5.2 5.1 20mA Load 5.0 100mA Load 4.9 5.1 VIN = 3.2V 5.0 VIN = 3V 4.9 VIN = 2.7V 4.8 4.8 2.7 3.0 3.3 3.6 3.9 INPUT VOLTAGE [V] 4.2 0 4.5 Oscillator Frequency vs. Supply Voltage 50 100 LOAD CURRENT [mA] Efficiency 2.6 150 vs. Load Current 100 VIN= 2.7V 90 2.4 EFFICIENCY [%] OSCILLATOR FREQUENCY [MHz] 3.0 2.2 2.0 VIN= 3.2V 80 VIN= 3.7V 70 60 50 VIN= 4.5V 1.8 40 1.6 30 2.7 Doc. No. 5002, Rev. I 3.0 3.3 3.6 3.9 INPUT VOLTAGE [V] 4.2 4.5 1 10 100 LOAD CURRENT [mA] 4 (c) 2005 by Catalyst Semiconductor, Inc. Characteristics subject to change without notice CAT3200/3200-5 TYPICAL PERFORMANCE CHARACTERISTICS (CAT3200-5) TAMB=25C, CIN=COUT=CFLY=1F, VIN=3.3V unless specified otherwise. Soft Start Power Up (90mA Load, 3.3V Input) Load Step Response (3.3V Input) Short Circuit Current vs Supply Voltage Output Ripple (100mA Load, 3.3V Input) CURRENT LIMIT [mA] . 250 200 150 100 50 0 2.7 3.3 3.6 3.9 4.2 INPUT VOLTAGE [V] 4.5 Oscillator Frequency Change vs. Temperature 4 2 FREQUENCY CHANGE [%] . OUTPUT VOLTAGE CHANGE [%] . Output Voltage Change vs. Temperature 3.0 1 10mA Load 0 -1 -2 -40 -20 0 20 40 60 80 100 0 -2 -4 -40 TEMPERATURE [ C] (c) 2005 by Catalyst Semiconductor, Inc. Characteristics subject to change without notice 2 5 -20 0 20 40 60 TEMPERATURE [ C] 80 100 Doc No. 5002, Rev. I CAT3200/3200-5 BLOCK DIAGRAM CNEG CPOS CNEG CPOS 2MHz Voltage Doubler IN 2VIN 2MHz Voltage Doubler IN 2VIN SHDN SHDN 1.25V + -- EN 5V/100mA 1.25V OUT FB + -- 5V 100k SGND EN 300k 100mA OUT GND PGND CAT3200 Adjustable Output CAT3200-5 5V Fixed Output PIN FUNCTIONS IN is the power supply. During normal operation the device draws a supply current which is almost constant. A very brief interval of non-conduction will occur at the switching frequency. The duration of the non-conduction interval is set by the internal non-overlapping "break-before-make" timing. IN should be bypassed with a 1F to 4.7F low ESR (Equivalent Series Resistance) ceramic capacitor. resistor network (400k). The feedback network will result in a reverse current of 10A to 20A to flow back through the device to ground. Whenever the device is taken out of shutdown mode, the output voltage will experience a slew rate controlled power-up. Full operating voltage is typically achieved in less than 0.5 msec. For filtering, a low ESR ceramic bypass capacitor (1F) in close proximity to the IN pin prevents noise from being injected back into the power supply. GND is the ground reference for all voltages on CAT32005 devices. SHDN is the logic control input (Active LOW) that places the device into shutdown mode. The internal logic is CMOS and the pin does not use an internal pull-down resistor. The SHDN pin should not be allowed to float. FB (CAT3200 Only) is the feedback input pin. An output divider should be connected from OUT to FB to program the output voltage. CPOS, CNEG are the positive and negative connections respectively for the charge pump flying capacitor. A low ESR ceramic capacitor (1F) should be connected between these pins. During initial power-up it may be possible for the capacitor to experience a voltage reversal and for this reason, avoid using a polarized (tantalum or aluminum) flying capacitor. PGND (CAT3200 Only). Is the same as GND for the CAT3200-5 except for the internal reference connection to SGND. SGND (CAT3200 Only) Ground pin for the internal reference. The CNEG connection is switched to this pin during the normal charge pump operation. OUT is the regulated output voltage to power the load. During normal operation, the device will deliver a train of current pulses to the pin at a frequency of 2MHz. Adequate filtering on the pin can typically be achieved through the use a low ESR ceramic bypass capacitor (1F to 4.7F) in close proximity to the OUT pin. The ESR of the output capacitor will directly influence the output ripple voltage. When the shutdown mode is entered, the output is immediately isolated from the input supply, however, the output will remain connected to the internal feedback Doc. No. 5002, Rev. I 6 (c) 2005 by Catalyst Semiconductor, Inc. Characteristics subject to change without notice CAT3200/3200-5 DEVICE OPERATION Typical values for total voltage divider resistance can range from several ks up to 1M. The CAT3200/CAT3200-5 use a switched capacitor charge pump to boost the voltage at IN to a regulated output voltage. Regulation is achieved by sensing the output voltage through an internal resistor divider (CAT3200-5) and modulating the charge pump output current based on the error signal. A 2-phase nonoverlapping clock activates the charge pump switches. The flying capacitor is charged from the IN voltage on the first phase of the clock. On the second phase of the clock it is stacked in series with the input voltage and connected to OUT. The charging and discharging the flying capacitor continues at a free running frequency of typically 2MHz. 1 3 CPOS CNEG 2 IN OUT VOUT 8 R1 FB 6 In shutdown mode all circuitry is turned off and the CAT3200/CAT3200-5 draw only leakage current from the VIN supply. OUT is disconnected from IN. The SHDN pin is a CMOS input with a threshold voltage of approximately 0.8V. The CAT3200/CAT3200-5 is in shutdown when a logic LOW is applied to the SHDN pin. The SHDN pin is a high impedance CMOS input. SHDN does not have an internal pull-down resistor and should not be allowed to float and. It must always be driven with a valid logic level. SHDN 7 PGND 4 SGND 5 1.27V ( ) 1 + R1 R2 COUT R2 Figure 1: Programming the Adjustable CAT3200 Short-Circuit and Thermal Protection The CAT3200 and CAT3200-5 have built-in short-circuit current limiting and over temperature protection. During overload conditions, output current is limited to approximately 225mA. At higher temperatures, or if the input voltage is high enough to cause excessive chip self heating, the thermal shutdown circuit shuts down the charge pump as the junction temperature exceeds approximately 160C. Once the junction temperature drops back to approximately 140C, the charge pump is enabled. The CAT3200and CAT3200-5 will cycle in and out of thermal shutdown indefinitely without latch-up or damage until a short-circuit on OUT is removed. Programming the CAT3200 Output Voltage (FB Pin) The CAT3200-5 version has an internal resistive divider to program the output voltage. The programmable CAT3200 may be set to an arbitrary voltage via an external resistive divider. Since it employs a voltage doubling charge pump, it is not possible to achieve output voltages greater than twice the available input voltage. Figure 1 shows the required voltage divider connection. The voltage divider ratio is given by the formula: R1 VOUT = -1 R2 1.27V (c) 2005 by Catalyst Semiconductor, Inc. Characteristics subject to change without notice 7 Doc No. 5002, Rev. I CAT3200/3200-5 APPLICATION INFORMATION The overall junction to ambient thermal resistance (JA) for device power dissipation (PD) consists primarily of two paths in series. The first path is the junction to the case (JC) which is defined by the package style, and the second path is case to ambient (CA) thermal resistance which is dependent on board layout. The final operating junction temperature for any set of conditions can be estimated by the following thermal equation: Ceramic Capacitors Ceramic capacitors of different dielectric materials lose their capacitance with higher temperature and voltage at different rates. For example, a capacitor made of X5R or X7R material will retain most of its capacitance from - 40C to 85C whereas a Z5U or Y5V style capacitor will lose considerable capacitance over that range. TJUNC = TAMB + PD ( JC ) + PD ( CA ) Z5U and Y5V capacitors may also have voltage coefficient causing them to lose 60% or more of their capacitance when the rated voltage is applied. When comparing different capacitors it is often useful consider the amount of achievable capacitance for a given case size rather than discussing the specified capacitance value. For example, over rated voltage and temperature conditions, a 1F, 10V, Y5V ceramic capacitor in an 0603 case may not provide any more capacitance than a 0.22F, 10V, X7R available in the same 0603 case. For many CAT3200/CAT3200-5 applications these capacitors can be considered roughly equivalent. = TAMB + PD ( JA ) The CAT3200 in SOT23 package, when mounted on printed circuit board with two square inches of copper allocated for "heat spreading", will result with an overall JA of less than 150C/W. For a typical application operating from a 3.8V input supply, the maximum power dissipation is 260mW (100mA x 3V). This would result if a maximum junction temperature of : The capacitor manufacturer's data sheet should be consulted to determine what value of capacitor is needed to ensure the desired capacitance at all temperatures and voltages. Below is a list of ceramic capacitor manufacturers and how to contact them: Capacitor Manufacturer Web Phone Murata www.murata.com 814.237.1431 AVX/Kemet www.avxcorp.com 843.448.9411 Vishay www.vishay.com Kemet www.kemet.com 408.986.0424 Taiyo Yuden www.t-yuden.com 408.573.4150 TJUNC = TAMB + PD (JA) = 85C + 0.26W (150C/W) = 85C + 39C = 124C The use of multi-layer board construction with power planes will further enhance the overall thermal performance. In the event of no dedicated copper area being used for heat spreading, a multi-layer board will typically provide the CAT3200 with an overall JA of 200C/W. This level of thermal conduction would allow up to 200mW be safely dissipated within the device. Thermal Management For higher input voltages and maximum output current there can be substantial power dissipation in the CAT3200/CAT3200-5. If the junction temperature increases to 160C, the thermal shutdown circuitry will automatically turn off the output. A good thermal connection to the PC board is recommended to reduce the chip temperature. Connecting the GND pin (Pins 4/5 for CAT3200, Pin 2 for CAT3200-5) to a ground plane, and maintaining a solid ground plane under the device reduces the overall thermal resistance. Doc. No. 5002, Rev. I 8 (c) 2005 by Catalyst Semiconductor, Inc. Characteristics subject to change without notice CAT3200/3200-5 TYPICAL APPLICATIONS 3.3 V Supply to 5 V 4 5 USB Port to Regulated 5V Power Supply 6 IN OUT 4 1 5 6 IN OUT 1 3.3 V + 10% 3 SHDN 3 VOUT 5V + 4% 100mA CAT3200-5 SHDN VOUT 5V + 4% CAT3200-5 GND 2 GND 2 Lithium-Ion Battery to 5V White or Blue LED Driver 4 C5 6 C+ OUT IN 3V to 4.4V + Li-ion Battery Drive up to 5 LEDs 1 100 CAT3200-5 3 ON OFF Apply PWM Waveform for Adjustable Brightness Control SHDN SGND 100 100 100 100 2 VSHDN t White or Blue LED Driver with LED Current Control 1 C+ 2 3 C- IN 3V to 4.4V + Li-ion Battery OUT CAT3200 FB PGND ON OFF Apply PWM Waveform for Adjustable Brightness Control (c) 2005 by Catalyst Semiconductor, Inc. Characteristics subject to change without notice 6 SHDN VSHDN SGND Up to 6 LEDs 8 7 5 82 4 82 82 82 82 t 9 Doc No. 5002, Rev. I CAT3200/3200-5 MECHANICAL PACKAGE DRAWINGS 3 6-LEAD THIN SOT-23 4 aaa C 2X D H e1 A B D 5 N/2 +1 N B VIEW A-A SEE VIEW C E/2 E1/2 3 R1 E1 4 E R GAUGE PLANE L2 aaa C D L SEATING C PLANE 2X (L1) 1 2 N/2 bbb C 2X N/2 TIPS e 5 B NX b ddd M VIEW C (b) WITH METAL b1 CA BD c c1 BASE METAL SECTION B - B b 5 8 7 A 5 e/2 X X=A &/or B A X X=A &/or B ODD LEAD SIDES TOP VIEW A2 ccc C NX A1 EVEN LEAD SIDES TOP VIEW SEATING C PLANE A All Dimensions are in Millimeters 4. 5. 6. 7. 8. Min Nom Max A -- -- 1.00 aaa A1 0.01 0.05 0.10 bbb 0.25 1,2 A2 0.84 0.87 0.90 ccc 0.10 1,2 c 0.12 0.15 0.20 7 c1 0.08 0.13 0.16 7 D 2.80 2.90 3.00 3,4 Min Nom Max Min Nom Max Min Nom Max Notes E 2.60 2.80 3.00 3,4 b 0.30 -- 0.45 0.30 -- 0.45 0.22 -- 0.36 7,8 3,4 b1 0.31 0.35 0.39 0.31 0.35 0.39 0.22 0.26 0.30 E1 1.50 1.60 1.75 L 0.30 0.40 0.50 Notes Tolerances of Form and Position Notes 0.15 1,2 Variations AA 6 AB BA e 0.95BSC 0.95BSC 0.65BSC L1 0.60REF e1 1.90BSC 1.90BSC 1.95BSC L2 0.25BSC N 6 5 8 R 0.10 -- -- R1 0.10 -- 0.25 Tolerances of Form and Position ddd 0.20 0.20 0.13 1,2 Notes: 0 4 8 1. Dimensions and tolerancing per ASME Y14.5M - 1994 2. Dimension are in mm. 1 4 10 12 3. Dimension D does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs shall not exceed 0.15mm per end. Dimension E1 does not include interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.15mm per side. D and E1 dimensions are determined at Datum H. The package top may be smaller than the package bottom. Dimensions D and E1 are determined at the outermost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and bottom of the plastic body. D and E1 dimensions are determined at Datum H. Datums A & B to be determined at Datum H. Package varation "AB" is a 5 lead version of the 6 lead variation "AA" where lead #5 has been removed from the 6 lead "AA" variation. These dimensions apply to the flat section of the lead between 0.08mm and 0.15mm from the lead tip. Dimension "b" does not include dambar protrusion. Allowable dambar protrusion shall be 0.08mm total in excess of the "b" dimension at maximum material condition. The dambar cannot be located on the lower radius of the foot. Minimum space between protrusion and an adjacent lead shall not be less than 0.07mm. Doc. No. 5002, Rev. I 10 (c) 2005 by Catalyst Semiconductor, Inc. Characteristics subject to change without notice CAT3200/3200-5 MECHANICAL PACKAGE DRAWINGS 8-LEAD MSOP 0.38 0.28 0.0150 0.0110 0.1970 0.1890 5.00 4.80 S 0.0256 [0.65] BSC 0.1220 0.1142 3.10 2.90 0.0374 0.0295 0.0433 [1.10] MAX. 0.039 [0.10] MAX. S 0.0059 0.0020 0.15 0.05 0.95 0.75 S 0.0150 0.0110 0.38 0.28 WITH PLATING 0.0276 0.0157 0.70 0.40 0.1220 0.1142 3.10 2.90 0.0091 0.0051 0.23 0.13 0.0050 [0.127] 0 - 6 WITH PLATING BASE METAL 0.0118 [0.30] REF. SECTION A - A Notes: (1) All dimensions are in mm Angles in degrees. 2 Does not include Mold Flash, Protrusion or Gate Burrs. Mold Flash, Protrusions or Gate Burrs shall not exceed 0.15 mm. per side. 3 Does not include Interlead Flash orProtrusion. Interlead Flash or Protrusion shall not exceed 0.25 mm per side. 4 Does not include Dambar Protrusion, allowable Dambar Protrusion shall be 0.08 mm. (5) This part is compliant with JEDEC Specification MO-187 Variations AA. (6) Lead span/stand off height/coplanarity are considered as special characteristics. (S) (7) Controlling dimensions in inches. [mm] (c) 2005 by Catalyst Semiconductor, Inc. Characteristics subject to change without notice 11 Doc No. 5002, Rev. I REVISION HISTORY Date Rev. Reason 06/17/2004 A Initial Release 09/3/2004 B Update Ordering Information 09/23/2004 C Minor change 10/26/2004 D Removed TDFN package, minor changes 10/29/2004 E Added Green Packages 02/1/2005 F Update 6-lead SOT-23 mechanical package drawing 02/28/2005 G Update Ordering Information 03/18/2005 H Update Ordering Information 09/22/2005 I Update Ordering Information Copyrights, Trademarks and Patents Trademarks and registered trademarks of Catalyst Semiconductor include each of the following: DPP TM AE2 TM MiniPotTM Catalyst Semiconductor has been issued U.S. and foreign patents and has patent applications pending that protect its products. For a complete list of patents issued to Catalyst Semiconductor contact the Company's corporate office at 408.542.1000. CATALYST SEMICONDUCTOR MAKES NO WARRANTY, REPRESENTATION OR GUARANTEE, EXPRESS OR IMPLIED, REGARDING THE SUITABILITY OF ITS PRODUCTS FOR ANY PARTICULAR PURPOSE, NOR THAT THE USE OF ITS PRODUCTS WILL NOT INFRINGE ITS INTELLECTUAL PROPERTY RIGHTS OR THE RIGHTS OF THIRD PARTIES WITH RESPECT TO ANY PARTICULAR USE OR APPLICATION AND SPECIFICALLY DISCLAIMS ANY AND ALL LIABILITY ARISING OUT OF ANY SUCH USE OR APPLICATION, INCLUDING BUT NOT LIMITED TO, CONSEQUENTIAL OR INCIDENTAL DAMAGES. Catalyst Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Catalyst Semiconductor product could create a situation where personal injury or death may occur. Catalyst Semiconductor reserves the right to make changes to or discontinue any product or service described herein without notice. Products with data sheets labeled "Advance Information" or "Preliminary" and other products described herein may not be in production or offered for sale. Catalyst Semiconductor advises customers to obtain the current version of the relevant product information before placing orders. Circuit diagrams illustrate typical semiconductor applications and may not be complete. Catalyst Semiconductor, Inc. Corporate Headquarters 1250 Borregas Avenue Sunnyvale, CA 94089 Phone: 408.542.1000 Fax: 408.542.1200 www.caalyst-semiconductor.com Publication #: Revison: Issue date: 5002 I 09/22/05