SYMBOLS & CODES EXPLAINED j p 7 e 4 . { i a i ( i . . [A G n LINE TYPE [DEVICE Vp. BVdss (BVgss _| \ass Igss@ ND] COMMON SOURCE/ Rds | MAX. | IN STRUC|Y200 (EO No. No. [DISS @ | | Id Ig |Vgs=0O8 we pi Vgs /Vds gfs Yos Cis FREE |MAX|-TURE | s/a jAD @25C |ld=0 |Vds | Vds>Vp!& mhos. AIR [TEMP T0200/D E w) | (vy | ty) Vv} | tA) | A A Vv MAX ee C Ser. v- Matched Type, also listed in STRUCTURE Section 13, Category 6 A typical afg D ~ Diffused @ Phototransistor, also listed in Pulsed E Epitaxial tooe bonr ae ; % High Frequency (Yes) Ge GermaniumPE 5 (i- Yes PE Planar Epitaxial PL Planar eet tg: . # Junction Type A With infinite heat sink A_y - Y, * Insulated Gate (MOS Type) T Above 28C; For additional is 9 _ Matched pair or dual information, consult manufacturer. + Not at given test conditions A Switching, other uses % Maximum Zw Chopper, Other uses + * Pulsed D Noise figure 8db or below VgglCut off} mi fT = Plastic Package A. Vogt Threshold) Vv H Hometaxial % Typical % Maximum $ Tetrode # Mini A Not given at test conditions % Insulated Gate (MNOS Type} - imimum R [_# = Mini T Rosion) # Vps * A Depletion Mode, Type A $ Depletion-Enhancement Mode, Type B x Enhancement Mode, Type C a A - BYv T- sv bso DSX A pss @ Ves = Qand Vos Vp Ves 790 Minimum Typical Pulsed ON e+ P+ , (Output Shorted) Not given at test conditions Typical Cass Cag0 g-c igs JJunction $Storage AAmbient CCase A Phototransistor Device A Tetrode Device % Composite Type BYngo ! Lo mE al ks esaleain M wa Re aay alg we TYPE No. fT - 40 # g0c * 45C $ 100c # 50 D Free Air Zz 60C y Typical Vatue 75C A- > 100C Symbols indicate temperature at which derating starts. A Q With infinite heat sink Following symbols indicate temp W Power at which derating starts: Output f- 40% (- ec % gor * 45C ~- 70C A Pulsed #- 50% $$ - 100C %_ min * 0-65C A Ambient @ 70-80 C Case # 85-100C J Junction # 110-125C S Storage 130-135C ~ 140-165C 170-200C v Over 200C D - te . $ Minimum # Pulsed or Peak a T At temperature 25C Case D- 1, # Pulsed $ Minimum aE t sraucly indicated Maximum tyt % * Ton t, # ~ ts QD ~ AtVog < Max. Veg (see mfr. spec.) FT - ttt * Tote # Icex ky A - rs * = Ton * Toft 1 cer CEO) CES @ AtTemp. 25C Case Vv Typical Value # Pulsed $ Typical tT AtTemp. > 25C # Rated max. operating frequency f # BV __ or punch-through t <b x a Gain bandwidth product (ft) Q- BV ces * Pulsed A- 1 * Maximum frequency of oscillation g BV BVsoisus) B-1 Q Figure of merit (frequency for CER $ Minimum B unity power gain) op A Minimum Z- Maximum 7 At Temp. 25C Case fon a $ Minimum ~~ "fe * ~ Available to # Pulsed selected range $ ~ Tetrode Typical narrower than # Radiation Resistant Device (Also see top of reverse side of card.)73 ML111B ML132B MT132B 2N3697 2N3113 28412 MEM301 2N3695 $D5012* * $05015* 2N3379 2N3385 K1502 UC140 MT101B RN1030 RN3020R SFF103 2N5505 v 2N5508 2NS511 2N55149 DP1003 v DP1006v Vv DP1009 2N4088 3N96 BFX83 FP4339 MEM101T MM2103 P1027 P1069E ut Vv DISS @ @25C |Id=0 |Vds D.A.T.A. 40 30 75 30 @ Vgs= -60mA 180uA 90m 1.0n m 3.7 5.0 B* 5.0 D* 6m% 30m% m 6.0mA 20nA n 1.5n 50n 50m! 1.5m 5Qm| 100u |5.0n 30m 3.0mA 6.0m 5.0m 50m) 35m 50m|3.8m 5m 50mj600u Igss@ Vgs>V' Vds>Vp|&Vds= -10n 50p -10n 100u 1.0n 3.0p .On n 15n 100p 100p 10p 3.0n 3.0n 10n 100p 100p 4.5 1.7m | 35u% 5.Op# * .1p 1.1pt* * Ip 1.1 pt* 2.0pA 5.0pa 1.0pA 8.0p 6.9pt 4.0pt 4.0pt 3.0 A* 9p 1.0m 6.5 m . 75m : 20p% 10 [3.0m 100u%|600 %| 40p# 10 | 7.0m .12k 16pt 20 |1.0m 1.2kt |5.0p% 20 |300u 2.4kt |5.0p% SYMBOLS AND CODES EXPLAINED IN INTERPRETER IN ORDER OF (1) DISSIPATION IN FREE AIR 4.0m 4.0m 4.0m 2.0m C- /200 |E 0 TURE | s/a AD 175 2008S 200 200J 125J T0200|D E R115b L53b L53b u 7072 u TO18 TO17 TO72 TO72 L53 L54 u22 u22 200S |ID#A 200J |PL 200J |PL 73