ZXMN10A11G
Document Number DS32056 Rev. 8 - 2
1 of 8
www.diodes.com
March 2015
© Diodes Incorporated
ZXMN10A11G
ADVANCE INFO R MA T I O N
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
RDS(on)
ID
TA = +25°C
100V
350mΩ @ VGS = 10V
2.4A
450mΩ @ VGS = 6.0V
2.1A
Description and Applications
This MOSFET is designed to minimize the on-state resistance and yet
maintain superior switching performance, making it ideal for high
efficiency power management applications.
Motor Control
DC-DC Converters
Power Management Functions
Uninterrupted Power Supply
Features and Benefits
Fast Switching Speed
Low Gate Drive
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT223
Case Material: Molded Plastic; UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Ordering Information (Note 4)
Product
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
ZXMN10A11GTA
See Below
7
12
1,000
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Top View
SOT223
Equivalent Circuit
D
S
G
Pin Out - Top View
ZXMN10A11 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
10A11
YWW
ZXMN
SOT223
Green
ZXMN10A11G
Document Number DS32056 Rev. 8 - 2
2 of 8
www.diodes.com
March 2015
© Diodes Incorporated
ZXMN10A11G
ADVANCE INFO R MA T I O N
Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGS
20
V
Continuous Drain Current
VGS = 10V
(Note 6)
ID
2.4
A
TA = +70°C (Note 6)
1.9
(Note 5)
1.7
Pulsed Drain Current
VGS= 10V
(Note 7)
IDM
7.9
A
Continuous Source Current (Body Diode)
(Note 6)
IS
4.6
A
Pulsed Source Current (Body Diode)
(Note 7)
ISM
7.9
A
Thermal Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
Linear Derating Factor
(Note 5)
PD
2.0
16
W
mW/°C
(Note 6)
3.9
31
Thermal Resistance, Junction to Ambient
(Note 5)
RJA
62.5
°C/W
(Note 6)
32.0
Thermal Resistance, Junction to Lead
(Note 8)
RJL
9.8
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as Note 5, except the device is measured at t 10 seconds.
7. Same as Note 5, except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMN10A11G
Document Number DS32056 Rev. 8 - 2
3 of 8
www.diodes.com
March 2015
© Diodes Incorporated
ZXMN10A11G
ADVANCE INFO R MA T I O N
Thermal Characteristics
110 100
10m
100m
1
10
Single Pulse
Tamb=25°C
RDS(on)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
ID Drain Current (A)
VDS Drain-Source Voltage (V) 020 40 60 80 100 120 140 160
0.0
0.4
0.8
1.2
1.6
2.0
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 110 100 1k
0
10
20
30
40
50
60
70 Tamb=25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s) 100µ 1m 10m 100m 110 100 1k
1
10
100
Single Pulse
Tamb=25°C
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
ZXMN10A11G
Document Number DS32056 Rev. 8 - 2
4 of 8
www.diodes.com
March 2015
© Diodes Incorporated
ZXMN10A11G
ADVANCE INFO R MA T I O N
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
100
V
ID = 250µA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
1
µA
VDS = 100V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
2.0
4.0
V
ID = 250µA, VDS = VGS
Static Drain-Source On-Resistance (Note 9)
RDS (ON)
0.35
Ω
VGS = 10V, ID = 2.6A
0.45
VGS = 6V, ID = 1.3A
Forward Transconductance (Notes 9 & 10)
gfs
4
S
VDS = 15V, ID = 2.6A
Diode Forward Voltage (Note 9)
VSD
0.85
0.95
V
IS = 1.85A, VGS = 0V
Reverse Recovery Time (Note 10)
trr
26
ns
IF = 1.0A, di/dt = 100A/µs
Reverse Recovery Charge (Note 10)
Qrr
30
nC
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Ciss
274
pF
VDS = 50V, VGS = 0V
f = 1MHz
Output Capacitance
Coss
21
pF
Reverse Transfer Capacitance
Crss
11
pF
Total Gate Charge (Note 11)
Qg
3.5
nC
VGS = 6.0V
VDS = 50V
ID = 2.5A
Total Gate Charge (Note 11)
Qg
5.4
nC
VGS = 10V
Gate-Source Charge (Note 11)
Qgs
1.4
nC
Gate-Drain Charge (Note 11)
Qgd
1.5
nC
Turn-On Delay Time (Note 11)
tD(on)
2.7
ns
VDD = 50V, VGS = 10V
ID = 1A, RG 6.0Ω
Turn-On Rise Time (Note 11)
tr
1.7
ns
Turn-Off Delay Time (Note 11)
tD(off)
7.4
ns
Turn-Off Fall Time (Note 11)
tf
3.5
ns
Notes: 9. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%.
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.
ZXMN10A11G
Document Number DS32056 Rev. 8 - 2
5 of 8
www.diodes.com
March 2015
© Diodes Incorporated
ZXMN10A11G
ADVANCE INFO R MA T I O N
Typical Characteristics
0.1 1 10
0.01
0.1
1
10
0.1 1 10
0.01
0.1
1
10
3 4 5
0.1
1
-50 0 50 100 150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0.01 0.1 1 10
0.1
1
10
100
0.4 0.6 0.8 1.0
0.01
0.1
1
10
3.5V
10V 5V
4V
Output Characteristics
T = 25°C
4.5V
VGS
ID Drain Current (A)
VDS Drain-Source Voltage (V)
10V
2.5V
3V
4.5V
5V
3.5V
Output Characteristics
T = 150°C
VGS
4V
ID Drain Current (A)
VDS Drain-Source Voltage (V)
Typical Transfer Characteristics
VDS = 10V
T = 25°C
T = 150°C
ID Drain Current (A)
VGS Gate-Source Voltage (V) Normalised Curves v Temperature
RDS(on)
VGS = 10V
ID = 2.6A
VGS(th)
VGS = VDS
ID = 250uA
Normalised R
DS(on) and VGS(th)
Tj Junction Temperature (°C)
3.5V 4V
10V
5V
4.5V
On-Resistance v Drain Current
T = 25°C
VGS
RDS(on) Drain-Source On-Resistance
ID Drain Current (A)
T = 150°C
T = 25°C
Source-Drain Diode Forward Voltage
VSD Source-Drain Voltage (V)
ISD Reverse Drain Current (A)
ZXMN10A11G
Document Number DS32056 Rev. 8 - 2
7 of 8
www.diodes.com
March 2015
© Diodes Incorporated
ZXMN10A11G
ADVANCE INFO R MA T I O N
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT223
Dim
Min
Max
Typ
A
1.55
1.65
1.60
A1
0.010
0.15
0.05
b
0.60
0.80
0.70
b1
2.90
3.10
3.00
C
0.20
0.30
0.25
D
6.45
6.55
6.50
E
3.45
3.55
3.50
E1
6.90
7.10
7.00
e
-
-
4.60
e1
-
-
2.30
L
0.85
1.05
0.95
Q
0.84
0.94
0.89
All Dimensions in mm
Dimensions
Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
X1
Y1
Y
XC
C1 Y2
A1
A
7°
7°
D
b
e
e1
b1
C
E1
L
0°-10°
Q
E
0.25
Seating
Plane
Gauge
Plane
ZXMN10A11G
Document Number DS32056 Rev. 8 - 2
8 of 8
www.diodes.com
March 2015
© Diodes Incorporated
ZXMN10A11G
ADVANCE INFO R MA T I O N
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for
use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
