APT10SCD120B 1200V 10A Zero Recovery Silicon Carbide Schottky Diode TO PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS * Anti-Parallel Diode -Switchmode Power Supply -Inverters * Zero Recovery Times (trr) * Higher Reliability Systems * Popular TO-247 Package * Applications - PFC - Hardswitching * Low Forward Voltage * Minimizes or eliminates snubber -2 4 7 1 2 * Low Leakage Current 2 1 1 - Cathode 2 - Anode Back of Case - Cathode MAXIMUM RATINGS Symbol VR All Ratings: TC = 25C unless otherwise specified. Characteristic / Test Conditions Ratings Unit 1200 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward current IFRM Repetitive Peak Forward Suge Current (TJ = 45C, tp = 10ms, Half Sine Wave) 50 IFSM Non-Repetitive Forward Surge Current (TJ = 25C, tp = 10ms, Half Sine) 110 Ptot Power Dissipation TJ, TSTG TL TC = 25C 37 TC = 135C 10 TC = 25C 125 TC = 110C 45 Operating and Storage Junction Temperature Range Amps W -55 to 150 Lead Temperature for 10 Seconds C 300 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions Min Typ Max IF = 10A TJ = 25C 1.5 1.8 IF = 10A, TJ = 150C 2.1 VF Forward Voltage IRM Maximum Reverse Leakage Current Qc Total Capactive Charge VR = 600V, IF = 10A, di/dt = -500A/s, TJ = 25C 22 Junction Capacitance VR = 1V, TJ = 25C, f = 1MHz 600 Junction Capacitance VR = 200V, TJ = 25C, f = 1MHz 71 Junction Capacitance VR = 400V, TJ = 25C, f = 1MHz 52 CT VR = 1200V TJ = 25C 200 VR = 1200V, TJ = 150C 1000 Microsemi Website - http://www.microsemi.com Unit Volts A nC pF 050-7700 Rev B 3 - 2013 Symbol APT10SCD120B THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RJC Junction-to-Case Thermal Resistance WT Min Typ Package Weight Torque Max Unit 1.0 C/W 0.22 oz 5.9 g Maximum Mounting Torque 10 lb*in 1.1 N*m Microsemi reserves the right to change, without notice, the specifications and information contained herein. ZJC, THERMAL IMPEDANCE (C/W) 1. 2 1 0. 8 0. 6 Note: t1 P DM 0. 4 t2 t 0. 2 0 Duty Factor D = 1 /t2 Peak T J = P DM x Z JC + T C 10-5 10-4 10-3 10-2 0.1 1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TYPICAL PERFORMANCE CURVES 40 TJ = -55C 35 TJ = 25C 15 30 TJ = 150C 25 TJ = 125C 10 IF(AV) (A) IF, FORWARD CURRENT (A) 20 20 15 10 5 5 Duty cycle = 0.5 0 0 2 4 6 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 0 IR, REVERSE LEAKAGE CURRENT (A) 100 P (w) total 75 100 125 150 600 120 050-7701 Rev B 3 - 2013 50 Case Temperature (C) FIGURE 3, Maximum Average Forward Current vs. Case Temperature 140 80 60 40 20 0 25 25 50 75 100 125 150 CASE TEMPERATURE (C) Figure 4. Maximum Power Dissipation vs. Case Temperature 150C 500 400 300 125C 200 100 0 75C 25C 0 200 400 600 800 1000 1200 1400 VR, REVERSE VOLTAGE (V) Figure 5. Reverse Leakage Currents vs. Reverse Voltage APT10SCD120B TYPICAL PERFORMANCE CURVES CJ, JUNCTION CAPACITANCE (pF) 700 60 40 20 400 500 600 700 800 600 500 400 300 200 100 0 900 100 200 300 400 500 600 700 800 VR, REVERSE VOLTAGE (V) Figure 7. Junction Capacitance vs. Reverse Voltage VR, REVERSE VOLTAGE (V) Figure 6. Reverse Recovery Charge vs. VR 0 TO-247 Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max . 0.40 (.016) 1.016(.040) 19.81 (.780) 20.32 (.800) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) Anode 2.21 (.087) 2.59 (.102) Cathode 10.90 (.430) BSC Dimensions in Millimeters and (Inches) 050-7700 Rev B 3-2013 0 100 200 300 Cathode Qrr, REVERSE RECOVERY CHARGE (nC) 80 APT10SCD120B Disclaimer: 050-7700 Rev B 3-2013 The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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