Rev.4.00 Mar 16, 2005 page 1 of 4
1S2075(K)
Silicon Epitaxial Planar Diode for High Speed Switching
REJ03G0558-0400
(Previous: ADE-208-144C)
Rev.4.00
Mar 16, 2005
Features
• Low capacitance. (C = 3.5 pF max)
• Short reverse recovery time. (trr = 8.0 ns max)
• High reliability with glass seal.
Ordering Information
Type No.
Cathode band
Mark
Package Name
Package Code
(Previous Code)
1S2075(K) Green H
DO-35 GRZZ0002ZB-A
(DO-35)
Pin Arrangement
12
H
Cathode band
1. Cathode
2. Anode
1S2075(K)
Rev.4.00 Mar 16, 2005 page 2 of 4
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Peak reverse voltage VRM 35 V
Reverse voltage VR 30 V
Peak forward current IFM 450 mA
Non-Repetitive peak forward surge current IFSM * 600 mA
Average rectified current IO 100 mA
Power dissipation Pd 250 mW
Junction temperature Tj 175 °C
Storage temperature Tstg −65 to +175 °C
Note: Within 1s forward surge current.
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward voltage VF — — 0.8 V IF = 10 mA
Reverse current IR — — 100 nA VR = 30 V
Capacitance C — — 3.5 pF VR = 1 V, f = 1 MHz
Reverse recovery time trr * — — 8.0 ns IF = IR = 10 mA, Irr = 1 mA
Note: Reverse recovery time test circuit
0.1 µF
DC
Supply
Pulse
Generator
Ro = 50 ΩRin = 50 Ω
Sampling
Oscilloscope
3 kΩ
Trigger
1S2075(K)
Rev.4.00 Mar 16, 2005 page 3 of 4
Main Characteristic
1.0 10
10
1.0
0.1 100
f = 1MHz
0 0.2 0.80.6 1.00.4
10
-1
10
-2
10
-3
10
-4
1.2
Fig.1 Forward current vs. Forward voltage
Forward voltage V
F
(V)
Forward current I
F
(A)
Ta = -25
°
C
Ta = 25°C
Ta = 125°C
Ta = 75°C
010 304020 50
Ta = 75°C
Ta = 125°C
Ta = 25°C
10
–5
10
–6
10
–4
10
–7
10
–8
10
–9
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage V
R
(V)
Reverse current I
R
(A)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage V
R
(V)
Capacitance C (pF)
1S2075(K)
Rev.4.00 Mar 16, 2005 page 4 of 4
Package Dimensions
LEL
Min Nom Max
φb-0.5
φD-2.0
E--4.2
L26.0 - -
-
-
φbφD
Dimension in Millimeters
Reference
Symbol
SC-40 0.13g
MASS[Typ.]
DO-35 / DO-35VGRZZ0002ZB-A
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