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Description
This Alcatel 1916 LMM contains an Alcatel
DFB laser with monolithically integrated
electro-absor ption modulator (ILM). This
chip provides much lower dispersion
penalties than a directly modulated DFB,
without the complexity of LiN bO3 external
modulators. The Alcatel 1916 LMM is
optimized for ultra long-haul transmission
systems using non-dispersion shifted and
optical fiber amplifiers.
Features
• Industry-standard 14-pin butterfly package
• Very low dispersion penalty over 750km for
2.5 Gbit/s operation
• InGaAsP monolithically integrated DFB laser and
modulator chip
• High frequency butterfly package with
50 Ω RF impedance matching and D C bias RF
filtering
• Low drive voltage ( ≤ 2 Vpp)
• Internal optical isolator
• High power available
Applications
• STM-16 and OC-48 ultra long-haul
transmission systems
• Terminals for submarine tr ansmission systems
Optical characteristics
Parameter Symb. Conditions Min Typical Max Units
Threshold current Ith CW, Vbias = 0 V 5 17 35 mA
Operating current Iop CW, Vbias = 0 V 50 80 100 mA
Optical output power PAVE Iop, Vmod, [1] -2 dBm
Laser forward voltage VF CW, Iop, Vbias = 0 V 2 V
Modulator bias voltage Vbias See [1] - 2 - 1 0 V
Modulator drive voltage Vmod See [1] 1 2 V
Dynamic extinction ratio DER See [1] 10 dB
Emission wavelength λm 1530 1570 nm
Side mode suppr ession SMSR @ Iop 35 dB
Cut off fr equency S21 - 3 dB 4 GHz
RF return loss S11 DC to 3 GHz 10 11 dB
Dispersion penalty ∆s See [1], [2 ] 2 dB
Tracking error TR Tsubmount = 25 °C, Tcase = 70°C
If = 100 mA, Q = 10 log [P(70 °C)/P(25 °C)] - 0.5 0.5 dB
Rise time / Fall time Tr/Tf [1], 10%, 90% 70 125 ps
Optical return loss Ol Tc = - 5 to 70 °C 25 dB
Monitor diode current Im Iop, VM = - 5 V 0.2 0.5 1.5 mA
Dark current Id 0.1 µA
TEC current It∆T= 45 °C, Io
= 120 mA, TC= 70 °C, Vbias= - 1 V 1 1.2 A
TEC voltage Vt ∆T= 45 °C, Iop= 120 mA, TC= 70 °C, Vbias= - 1 V 1.6 2.4 V
Thermistor resistance RTH
9.5 10.5 KΩ
Notes : All limits start of life, Tcase = 25 °C , Tsubmount = 25 °C, monitor bias = - 5 V, unless otherwise stated.
[1] BER = 10-10; 2.488 Gbit/s modulation; 223-1 PRBS; NZR line code; DER≥10dB [2] 7200 ps/nm dispersion, assuming fiber with an average dispersion of 18 ps/nm/km
Absolute maximum ratings
Parameters Min Max Unit
Operating case temperature - 5 70 °C
Storage temperature -40 85 °C
Laser forward current 150 mA
Laser reverse voltage 2V
Modulator forward voltage 1V
Modulator reverse voltage 5V
Photodiode forward current 1 mA
Photodiode reverse voltage 20 V
TEC Voltage 2.8 V
TEC Current 1.4 A
ESD applied on modulator 500 V
ESD applied on laser [1 ] 2000 V
Lead soldering time (at 260°C) 10 s
Packing Mounting Screw Torque 0.2 nm
[1] Human body model Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.
lcatel 1916 L MM
2.5 Gbit/s digital Laser Module with
integrated electro-absorption Modulator