BFS483 NPN Silicon RF Transistor* * For low noise, high-gain broadband amplifiers at 4 5 6 collector currents from 2 mA to 30 mA * fT = 8 GHz, F = 0.9 dB at 900 MHz 1 2 3 * Two (galvanic) internal isolated Transistor in one package * For orientation in reel see package information below * Pb-free (RoHS compliant) package 1) * Qualified according AEC Q101 * Short term description C1 E2 B2 6 5 4 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS483 1Pb-containing Marking RHs 1=B Pin Configuration 2=E 3=C 4=B 5=E Package 6=C SOT363 package may be available upon special request 2007-04-26 1 BFS483 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 65 Base current IB 5 Total power dissipation1) Ptot 450 mW Junction temperature Tj 150 C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 V mA TS 40 C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point 2) RthJS 245 K/W Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 12 - - V ICES - - 100 A ICBO - - 100 nA IEBO - - 1 A hFE 70 100 140 DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, I E = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain- - IC = 15 mA, VCE = 8 V, pulse measured 1T S is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance 2007-04-26 2 BFS483 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 6 8 - Ccb - 0.34 0.54 Cce - 0.13 - Ceb - 1.1 - GHz IC = 25 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure dB F IC = 5 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz - 0.9 - - 1.4 - G ms - 19 - dB G ma - 12.5 - dB IC = 5 mA, VCE = 8 V, ZS = ZSopt, f = 1.8 GHz Power gain, maximum stable1) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Power gain, maximum available2) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz |S21e|2 Transducer gain dB IC = 15 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz - 15.5 - IC = 15 mA, VCE = 8 V, ZS = ZL = 50 , f = 1.8 MHz - 10 - 1G ms = |S 21 / S 12| 1/2 ma = |S 21e / S12e| (k-(k-1) ) 2G 2007-04-26 3 BFS483 Total power dissipation Ptot = (TS) Permissible Pulse Load RthJS = (t p) 10 3 500 mW 400 K/W RthJS Ptot 350 300 10 2 250 0.5 0.2 0. 1 0.05 0.2 0.1 0.005 D=0 200 150 100 50 0 0 20 40 60 80 100 120 C 10 1 -7 10 150 TS 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp Permissible Pulse Load Ptotmax/P totDC = (tp) Ptotmax /PtotDC 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 2007-04-26 4 0 Package SOT363 BFS483 Package Outline 2 0.2 0.9 0.1 +0.1 6x 0.2 -0.05 0.1 0.1 MAX. M 0.1 Pin 1 marking 1 2 3 A 1.25 0.1 4 0.1 MIN. 5 2.1 0.1 6 0.15 +0.1 -0.05 0.65 0.65 0.2 M A Foot Print 1.6 0.9 0.7 0.3 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 0.2 2.3 8 4 Pin 1 marking 1.1 2.15 2007-04-26 5 BFS483 Edition 2006-02-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2007-04-26 6