Single Phase Rectifier Bridges PSB 61 IdAVM = 65 A VRRM = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSB 61/08 PSB 61/12 PSB 61/14 PSB 61/16 PSB 61/18 Symbol Test Conditions IdAVM IFSM T C = 100C, module i2 dt T VJ T VJM T stg VISOL Md W eight Maximum Ratings 65 A T VJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1000 1100 A A T VJ = T VJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 900 1000 A A T VJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5000 5050 A2 s A2 s T VJ = T VJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 4050 4170 A2 s A2 s -40 ... + 150 150 -40 ... + 150 C C C 2500 3000 V V 2-2.5 110 Nm g 50/60 HZ, RMS IISOL 1 mA t = 1 min t=1s Mounting torque typ. (M5) Features * Package with fast-on terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 148688 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling Package, style and outline Dimensions in mm (1mm = 0.0394") Symbol Test Conditions IR VR = VRRM VR = VRRM T VJ = 25C T VJ = T VJM 0.12 3 mA mA VF VTO rT RthJC IF = 150 A T VJ = 25C 1.45 V 0.8 5 V m per Diode; DC current per module 1.12 0.28 K/W K/W RthJK per Diode; DC current per module 1.49 0.37 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 21 12.4 50 mm mm m/s2 For power-loss calculations only T VJ = T VJM POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach, Germany Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 Characteristic Value POWERSEM reserves the right to change limits, test conditions and dimensions www.powersem.net PSB 61 200 10 I F(OV) -----I FSM I FSM (A) [A] TVJ=45C 1.6 150 2 As TVJ=150C 1000 4 900 1.4 TVJ=45C 1.2 100 TVJ=150C 1 50 TVJ= 150C 0 VRRM TVJ= 25C 0.8 1/2 VRRM IF 0.6 1 VRRM 10 0 0.5 1 VF[V] 1.5 2 0.4 10 Fig. 1 Forward current versus voltage drop per diode 200 [W] PSB 61 175 0 10 1 t[ms] 10 2 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 1 2 3 4 t [ms] 6 10 Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) 95 0.34 0.22 = RTHCA [K/W] 0.47 TC 100 105 150 110 125 0.72 80 DC sin.180 [A] rec.120 rec.60 rec.30 60 115 120 100 40 125 1.22 75 DC sin.180 rec.120 rec.60 rec.30 50 25 PVTOT 0 10 3 130 135 2.72 140 145 C 150 20 IFAVM 40 60 0 [A] Tamb 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature 2 K/W Z thJK 1.5 Z thJC 1 0.5 Zth 0.01 0.1 t[s] 1 20 10 Fig. 6 Transient thermal impedance per diode (or Thyristor), calculated IdAV 0 50 100 150 200 TC(C) Fig.5 Maximum forward current at case temperature