POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach, Germany www.powersem.net
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
POWERSEM reserves the right to change limits, test conditions and dimensions
Single Phase PSB 61 IdAVM = 65 A
Rectifier Bridges VRRM = 800-1800 V
Preliminary Data Sheet
VRSM
V
VRRM
V
Type
800 800 PSB 61/08
1200 1200 PSB 61/12
1400 1400 PSB 61/14
1600 1600 PSB 61/16
1800 1800 PSB 61/18
Symbol Test Conditions Maximum Ratings
IdAVM TC = 100°C, module 65 A
IFSM TVJ = 45°C t = 10 ms (50 Hz), sine 1000 A
VR = 0 t = 8.3 ms (60 Hz), sine 1100 A
TVJ = TVJM t = 10 ms (50 Hz), sine 900 A
VR = 0 t = 8.3 ms (60 Hz), sine 1000 A
∫ i2 dt TVJ = 45°C t = 10 ms (50 Hz), sine 5000 A2 s
VR = 0 t = 8.3 ms (60 Hz), sine 5050 A2 s
TVJ = TVJM t = 10 ms (50 Hz), sine 4050 A2 s
VR = 0 t = 8.3 ms (60 Hz), sine 4170 A2 s
TVJ -40 ... + 150 °C
TVJM 150 °C
Tstg -40 ... + 150 °C
VISOL 50/60 HZ, RMS t = 1 min 2500 V ∼
IISOL ≤ 1 mA t = 1 s 3000 V ∼
Md Mounting torque (M5) 2-2.5 Nm
Weight typ. 110 g
Symbol Test Conditions Characteristic Value
IR VR = VRRM T
VJ = 25°C ≤ 0.12 mA
VR = VRRM T
VJ = TVJM ≤ 3 mA
VF IF = 150 A TVJ = 25°C ≤ 1.45 V
VTO For power-loss calculations only 0.8 V
rT TVJ = TVJM 5 mΩ
RthJC per Diode; DC current 1.12 K/W
per module 0.28 K/W
RthJK per Diode; DC current 1.49 K/W
per module 0.37 K/W
dS Creeping distance on surface 21 mm
dA Creeping distance in air 12.4 mm
a Max. allowable acceleration 50 m/s2
Features
• Package with fast-on terminals
• Isolation voltage 3000 V∼
• Planar glasspassivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered E 148688
Applications
• S
upplies for DC power equipment
• Input rectifiers for PWM inverter
• B
attery DC power supplies
• F
ield supply for DC motors
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling
Package, style and outline
Dimensions in mm (1mm = 0.0394“)
PSB 61
0.5 11.5 2
0
50
100
150
200
V [V]
F
IF
[A]
T = 150°C
VJ T = 25°C
VJ
0.4
0.6
0.8
1
1.2
1.4
1.6
10
0 10
1 10
2 10
3
t[ms]
I (A)
FSM
TVJ=45°C TVJ=150°C
1000 900
I
------
I
FSM
F(OV)
0 V
RRM
1/2 V
RRM
1 V
RRM
2 4 6 10
TVJ=45°C
TVJ=150°C
t [ms]
1
10
10
3
4
As
2
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode IFSM: Crest value. t:
duration
Fig. 3 ∫i2dt versus time
(1-10ms) per diode (or thyristor)
604020
0
25
50
75
100
125
150
175
200 95
100
105
110
115
120
125
130
135
140
145
150
TC
°C
DC
sin.180°
rec.120°
rec.60°
rec.30°
2.72
1.22
0.72
0.47
0.34 0.22 = RTHCA [K/W]
IFAVM [A] Tamb [K]
0 50 100 150
[W]
PVTOT
PSB 61
Fig. 4 Power dissipation versus direct output current and ambient
tem
p
erature
50 100 150 200
0
20
40
60
80
DC
sin.180°
rec.120°
rec.60°
rec.30°
T (°C)
C
I
dAV
[A]
Fig.5 Maximum forward current
at case tem
p
erature
0.01 0.1 1 10
0.5
1
1.5
2
K/W
Zth
t[s]
ZthJK
ZthJC
Fig. 6 Transient thermal impedance per diode (or Thyristor),
calculated
