HEXFET® Power MOSFET
December 5, 2012
www.irf.com 1
AUIRF7103Q
AUTOMOTIVE GRADE
Features
lAdvanced Planar Technology
lDual N Channel MOSFET
lLow On-Resistance
lDynamic dV/dT Rating
l175°C Operating Temperature
lFast Switching
lLead-Free, RoHS Compliant
lAutomotive Qualified*
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are
well known for, provides the designer with an ex-
tremely efficient and reliable device for use in Auto-
motive and a wide variety of other applications.
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
45
6
7
SO-8
AUIRF7103Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V
(BR)DSS
50V
R
DS(on)
max. 130m
I
D
3.0A
Parameter Units
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 4.5V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 4.5V
A
I
DM
Pulsed Drain Current
c
P
D
A
= 25°C
Power Dissipation
e
W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
f
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
h
mJ
dv/dt Peak Diode Recovery dv/dt
g
V/ns
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
JL
Junction-to-Drain Lead ––– 20 °C/W
R
JA
Junction-to-Ambient
fg
––– 62.5
-55 to + 175
2.4
16
12
See Fig. 16c, 16d, 19, 20
±
20
22
Max.
3.0
2.5
25
AUIRF7103Q
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December 5, 2012
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400μs; duty cycle 2%.
Surface mounted on 1 in square Cu board.
Starting TJ = 25°C, L = 4.9mH, RG = 25, IAS = 3.0A. (See Figure 12).
ISD 2.0A, di/dt 155A/μs, VDD V(BR)DSS, TJ 175°C.
Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive avalanche performance.
S
D
G
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
50
–––
–––
V
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
–––
0.057
–––
V/°C
–––
–––
130
–––
–––
200
V
GS(th)
Gate Threshold Voltage
1.0
–––
3.0
V
gfs
Forward Transconductance
3.4
–––
–––
S
I
DSS
Drain-to-Source Leakage Current
–––
–––
2.0
–––
–––
25
I
GSS
Gate-to-Source Forward Leakage
–––
–––
-100
Gate-to-Source Reverse Leakage
–––
–––
100
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Q
g
Total Gate Charge
–––
10
15
Q
gs
Gate-to-Source Charge
–––
1.2
–––
Q
gd
Gate-to-Drain ("Miller") Charge
–––
2.8
–––
t
d(on)
Turn-On Delay Time
–––
5.1
–––
t
r
Rise Time
–––
1.7
–––
t
d(off)
Turn-Off Delay Time
–––
15
–––
t
f
Fall Time
–––
2.3
–––
C
iss
Input Capacitance
–––
255
–––
C
oss
Output Capacitance
–––
69
–––
C
rss
Reverse Transfer Capacitance
–––
29
–––
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Voltage
–––
–––
1.2
V
t
rr
Reverse Recovery Time
–––
35
53
ns
T
J
= 25°C,I
F
= 1.5A
Q
rr
Reverse Recovery Charge
–––
45
67
nC
di/dt = 100A/μs
d
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
12
––– –––
––– –––
3.0
I
D
= 1.0A
R
G
= 6.0
R
D
= 25
d
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
nA
μAV
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 55°C
V
GS
= 10V
V
GS
= -20V
V
DS
= 40V
V
DD
= 25V
A
pF
ns
nC
T
J
= 25°C, I
S
= 1.5A, V
GS
= 0V
d
integral reverse
p-n junction diode.
Conditions
MOSFET symbol
showing the
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 3.0A
d
R
DS(on)
Static Drain-to-Source On-Resistance mV
GS
= 4.5V, I
D
= 1.5A
d
V
DS
= V
GS
, I
D
= 250μA
Conditions
V
DS
= 15V, I
D
= 3.0A
I
D
= 2.0A
V
GS
= 20V
AUIRF7103Q
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December 5, 2012
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
Qualification Information
†
SO-8 MSL1
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
Charged Device
Model
Class C5 (+/- 1125V)
†††
AEC-Q101-005
Moisture Sensitivity Level
RoHS Compliant Yes
ESD
Machine Model Class M1A (+/- 50V)
†††
AEC-Q101-002
Human Body Model Class H0 (+/- 250V)
†††
AEC-Q101-001
AUIRF7103Q
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December 5, 2012
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
3.0A
3.0 6.0 9.0 12.0 15.0
VGS, Gate-to-Source Voltage (V)
1.00
10.00
100.00
ID, Drain-to-Source Current )
TJ = 25°C
TJ = 175°C
VDS = 25V
20μs PULSE WIDTH
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
ID, Drain-to-Source Current (A)
4.5V
20μs PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
4.5V
20μs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
AUIRF7103Q
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December 5, 2012
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 175 C
J°
T = 25 C
J°
0 1 10 100 1000
VDS , Drain-toSource Voltage (V)
0.01
0.1
1
10
100
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
0 3 6 9 12
0
3
6
9
12
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I=
D2.0A
V = 10V
DS
V = 25V
DS
V = 40V
DS
110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C
gs + C
gd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds + C
gd
AUIRF7103Q
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December 5, 2012
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width µs
Duty Factor 
RD
VGS
RG
D.U.T.
VGS
+
-
VDD
25 50 75 100 125 150 175
0.0
0.6
1.2
1.8
2.4
3.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
Thermal Response ( Z thJA ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
AUIRF7103Q
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December 5, 2012
Fig 13. Typical On-Resistance Vs. Drain
Current
Fig 12. Typical On-Resistance Vs. Gate
Voltage
Fig 14. Typical Threshold Voltage Vs.
Junction Temperature
Fig 15. Typical Power Vs. Time
4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0
-VGS, Gate -to -Source Voltage (V)
0.09
0.10
0.11
0.12
0.13
0.14
0.15
RDS(on), Drain-to -Source On Resistance ()
ID = 3.0A
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
1.0
1.3
1.5
1.8
2.0
VGS(th) Gate threshold Voltage (V)
ID = 250μA
0 5 10 15 20 25 30 35 40
ID , Drain Current (A)
0.000
0.500
1.000
1.500
2.000
2.500
RDS (on) , Drain-to-Source On Resistance ()
VGS = 10V
VGS = 4.5V
1.00 10.00 100.00 1000.00
Time (sec)
0
10
20
30
40
50
60
70
Power (W)
AUIRF7103Q
8www.irf.com
December 5, 2012
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3F
50K
.2F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VGS
Fig 17. Gate Charge Test Circuit Fig 18. Basic Gate Charge Waveform
Fig 16a. Maximum Avalanche Energy
Vs. Drain Current
Fig 16d. Unclamped Inductive Waveforms
Fig 16c. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150 175
0
12
24
36
48
60
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
1.2A
2.5A
3.0A
AUIRF7103Q
www.irf.com 9
December 5, 2012
Fig 19. Typical Avalanche Current Vs.Pulsewidth
Fig 20. Maximum Avalanche Energy
Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01
tav (sec)
0.01
0.1
1
10
100
1000
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses
0.01
0.10
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
5
10
15
20
25
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 10% Duty Cycle
ID = 3.0A
AUIRF7103Q
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December 5, 2012
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRF7103Q
www.irf.com 11
December 5, 2012
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
AUIRF7103Q
12 www.irf.com
December 5, 2012
Ordering Information
Base part
number
Package Type Standard Pack Complete Part Number
Form Quantity
AUIRF7103Q SO-8 Tube 95 AUIRF7103Q
Tape and Reel 4000 AUIRF7103QTR
AUIRF7103Q
www.irf.com 13
December 5, 2012
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