REVISIONS
LTR DESCRIPTION DATE (YR-MO-DA) APPROVED
A Drawing updated to reflect current requirements. - ro 02-04-18 R. MONNIN
B Make a change to footnote 1/ under Table I. Make changes to +VOUT test
under Table I. Add new footnote 2/ to the –VOUT test under Table I. - ro 06-12-08 R. MONNIN
C
Add device type 02 and RHA designator “R” requirements.
Add case outline H. Add paragraphs 1.4.1, 1.5, 3.2.3, 4.4.4.1, and Table IIB.
Make changes to 1.2, 1.2.2, 1.3, Table I, and figure 1.
Add a footnote 4/ to the IS test as specified under Table I.
Make changes to CMRR, PSRR tests, footnote 1/ for device type 01 as
specified under Table I. - ro
09-12-09 C. SAFFLE
D In Table I, add the word “mode” after Disabled in the conditions column for
IS test. In Table I, add “” to VOS, IIB, and IOS max limits column. In Table I,
under footnote 4/, add the words “Disabled mode” at beginning of note.
Delete the burn in and group c end point limits from Table IIB. - ro 10-02-22 C. SAFFLE
E Add device type 03 tested at low dose rate. Make changes to paragraphs
1.2.2, 1.5, 4.4.4.1 and Table I. - ro 11-09-08 C. SAFFLE
REV
SHEET
REV
SHEET
REV STATUS REV E E E E E E E E E E E E
OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12
PMIC N/A PREPARED BY
RICK OFFICER
DLA LAND AND MARITIME
COLUMBUS, OHIO 4321 8-3990
http://www.landandmaritime.dla.mil
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
CHECKED BY
RAJESH PITHADIA
APPROVED BY
MICHAEL FRYE
MICROCIRCUIT, LINEAR, 160 MHz, RAIL-TO-RAIL
AMPLIFIER WITH DISABLE, MONOLITHIC
SILICON
DRAWING APPROVAL DATE
96-03-29
AMSC N/A
REVISION LEVEL
E SIZE
A CAGE CODE
67268
5962-96839
SHEET 1 OF 12
DSCC FORM 2233
APR 97 5962-E415-11
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MICROCIRCUIT DRAWING
SIZE
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1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisti ng of high reliability (device classes Q and
M) and space application (de vice class V). A choice of case outlines and lead finishes are available and are reflected in the Part
or Identifying Number (PIN). When availa ble, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962 R 96839 02 V H A
Federal
stock class
designator
RHA
designator
(see 1.2.1)
Device
type
(see 1.2.2)
Device
class
designator
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
\ / (see 1.2.3)
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA lev els and are
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a n on-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type Generic number Circuit function
01 AD8041 160 MHz rail-to-rail amplifier with disable
02 AD8041 Radiation hardened, 160 MHz rail-to-rail
amplifier with disable
03 AD8041 Radiation hardened, 160 MHz rail-to-rail
amplifier with disable
1.2.3 Device class designator. The device class design ator is a single letter identifying the product assurance l evel as
follows:
Device class Device requirements docum entation
M Vendor self-certification to the requireme nts for MIL-STD-883 compliant, non-
JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Q or V Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter Descriptive designator Terminals Package style
P GDIP1-T8 or CDIP2-T8 8 Dual-in-line
H GDFP1-F10 or CDFP2-F10 10 Flat pack
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
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1.3 Absolute maximum ratings. 1/
Supply voltage ( +VS to –VS ) ...................................................................................................... +12.6 V
Input common mode range (VIN) ................................................................................................. VS
Internal power dissipation (PD) .................................................................................................... 1.3 W 2/
Junction temperature (TJ) ............................................................................................................ +175C
Storage temperature range ........................................................................................................... -65C to +125C
Lead temperature range (soldering, 60 seconds) ........................................................................ +300C
Thermal resistance, junction-to-case (JC) :
Case H ..................................................................................................................................... 45C/W
Case P ...................................................................................................................................... 37C/W
Thermal resistance, junction-to-ambient (JA) :
Case H ..................................................................................................................................... 190C/W
Case P ...................................................................................................................................... 88C/W 3/
1.4 Recommended operating conditions.
Supply voltage (VS) .................................................................................................................... 2.5 V (+5 V / 0 V) to 5 V
Operating ambient temperature range (TA) ................................................................................. -55C to +125C
1.4.1 Operating performance characteristics.
Input / output characteristics : (TA = +25C, VS = 2.5 V, RL = 2 k to 0 V)
Output current (VO = -2 V to +2 V) ........................................................................................... 50 mA
Input common mode voltage range .......................................................................................... -2.5 V to +1.5 V
Dynamic perform ance: (T A = +25C, VS = 2.5 V, RL = 2 k to 0 V)
-3 db small signal bandwidth (VO 0.5 VPP, G = 1) ................................................................. 160 MHz
Bandwidth for 0.1 dB flatness (G = +2, RL = 150 ) ................................................................. 30 MHz
Slew rate (G = -1, VO = 2 V step) ............................................................................................. 160 V/s
Full power response (VO = 2 VPP) ........................................................................................... 24 MHz
Noise /distortion performa nce: (TA = +25C, VS = 2.5 V, RL = 2 k to 0 V)
Total harmonic distortion (fC = 5 MHz, VO = 2 VPP, G = +2, RL = 1 k) .................................. -72 dB
Input voltage noise (f = 10 kHz) ................................................................................................ 16 nV/ Hz
Disable characteristics: (TA = +25C, VS = 2.5 V, RL = 2 k to 0 V, VO = 2 VPP at 10 MHz, G = +2)
Turn off time (RF = RL = 2 k) ................................................................................................. 120 ns
Turn on time (RF = RL = 2 k) ................................................................................................. 230 ns
Off isolation (DISABLE pin tied to –VS, RL = 100 , f = 5 MHz, G = +2, RF = 1 k) .............. 70 dB
Off voltage (device disabled) .................................................................................................... +VS – 2.5 V
On voltage (device enabled) ..................................................................................................... Open or +VS
_____
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ Maximum internal power dissipation is specified so that the j unction temperature does not exceed +175C. In product
application, ad ditional power dissipation created by output load current must not allow internal p ower dissipation absolute
maximum limit to be exceeded.
3/ Derate at 9 mW/C for TA 32C.
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1.5 Radiation features.
Device type 02:
Maximum total dose available (dose rate = 50 – 300 rads(S i)/s) .............................................. 100 krads(Si) 4/
Device type 03:
Maximum total dose available (dose rate 10 mrads(Si)/s) ..................................................... 50 krads(Si) 5/
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 - Test Method Standard Microcircuits.
MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standar d Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents ar e available online at https://assist.daps.dla.mil/quicksearch/ or from the Standardization
Document Order Desk, 700 Robbins Avenue , Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicabl e laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENT S
3.1 Item requir ements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specif ied herein or as modified in the device manufacturer's Quality Man ag ement (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in acc ordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.2 Design, co nstruction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for devic e class M.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 here in.
3.2.2 Terminal connections and block diagram. T he terminal connecti ons and block diagram shall be as specified on figure 1.
3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under docume nt
revision level control and shall be made availabl e to the preparing and acquiring activity upon request.
_____
4/ For device type 02, this part may be dose rate sensitive in a space environment and may demonstrate enhanced low
dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specifie d
in MIL-STD-883, method 1 01 9, conditi on A.
5/ For device type 03, radiation endpoint limits for the noted parameters are guaranteed for the conditio n specified in
MIL-STD-883, method 1 01 9, condition D.
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3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall appl y over the full
ambient operating temperature range.
3.4 Electrical t est requirements. The electrical test requirements shall be the subgroups specified in tab le IIA. T he electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN is not feasible due to space limitatio ns, the manufacturer has the
option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be marked.
Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in
accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. T he certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendi x A.
3.6 Certificate of compliance. For device classes Q and V, a certificate of complianc e shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an appr oved source of
supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of
MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appen dix A and herein.
3.7 Certificate of conf ormance. A certificate of conformance as required for device classes Q and V in MIL-PRF- 38535 or for
device class M in MIL-PRF-38 535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of
product (see 6.2 herein) inv olving devices acquired to this drawing is required for any change that affects this drawing.
3.9 Verification and rev iew for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritime’s agent,
and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore
documentation shall be mad e available onshore at the option of the revie wer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 49 (see MIL-PRF-38535, appendix A).
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TABLE I. Electrical performance characteristi cs.
Test Symbol Conditions 1/ 2/ 3/
-55C TA +125C
unless otherwise specified
Group A
subgroups
Device
type
Limits Unit
Min Max
Quiescent supply current IS 1,2,3 All 6.1 mA
M,D,P,L,R 1 02 6.1
M,D,P,L 1 03 6.1
Disabled mode 4/ 1,2,3 All 1.7
M,D,P,L,R 1 02 1.7
M,D,P,L 1 03 1.7
Input offset voltage VOS 1,2,3 All
9.5 mV
M,D,P,L,R 1 02
9.5
M,D,P,L 1 03
9.5
Common mode rejection
ratio CMRR VCM = -1 V to 2.5 V 1,2,3 All 70 dB
M,D,P,L,R 1 02 70
M,D,P,L 1 03 70
Power supply rejection
ratio PSRR VS = 2.5 V to 5.0 V 1,2,3 All 68 dB
M,D,P,L,R 1 02 68
M,D,P,L 1 03 68
Input bias current IIB 1,2,3 All
3.4 A
M,D,P,L,R 1 02
3.4
M,D,P,L 1 03
3.4
Input offset current IOS 1,2,3 All
0.7 A
M,D,P,L,R 1 02
0.7
M,D,P,L 1 03
0.7
See footnotes at end of table.
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TABLE I. Electrical performance characteristics – continued.
Test Symbol Conditions 1/ 2/ 3/
-55C TA +125C
unless otherwise specified
Group A
subgroups
Device
type
Limits Unit
Min Max
Open loop gain AOL R
L = 1 k 1,2,3 All 15 kV/V
M,D,P,L,R 1 02 15
M,D,P,L 1 03 15
Positive output swing
voltage +VOUT R
L = 1 k 1,2,3 All 1.75 V
M,D,P,L,R 1 02 1.75
M,D,P,L 1 03 1.75
RL = 50 1,2,3 All 1.45
M,D,P,L,R 1 02 1.45
M,D,P,L 1 03 1.45
Negative output swing
voltage -VOUT R
L = 1 k 1,2,3 All -2.15 V
M,D,P,L,R 1 02 -2.15
M,D,P,L 1 03 -2.15
RL = 50 1,2,3 All -1.5
M,D,P,L,R 1 02 -1.5
M,D,P,L 1 03 -1.5
1/ Unless otherwise specified, VS = 2.5 V and load resistance (RL) = 2 k to 0.0 V. This is equivalent to + VS = +5 V,
-V
S = 0 V, and load resistance (RL) = 2 k to 2.5 V.
2/ Device type 02 supplied to this drawing has been char acterized through all levels M, D, P, L, R of irradiation.
Device type 03 supplied to this drawing has been characterized throug h all levels M, D, P and L of irradiation. Ho wever,
device type 02 is only tested at the R level and device type 03 is only tested at L level. Pre and Post irradiation values are
identical unless otherwise specified in Table I. When performing post irradiation electrical measurements for any RHA
level, TA = +25C.
3/ For device type 02, this part may be dose rate sensitive in a space environment and may demonstrate enhanced low
dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specifie d
in MIL-STD-883, method 1019, condition A for devic e type 02. Device type 03 has been tested at a low dose rate.
For device type 03, radiation endpoint limits for the noted parameters are guaranteed for the conditio n specified in
MIL-STD-883, method 1019, condition D
4/ Disabled mode: the device has an active low disable bar pin which can be used to three state the output of the part and also
lower its supply current. If the disable bar pin is left floating, the part is enabled and will perform normally. If the disable pin
is pulled to 2.5 V (minimum) below the positive supply, the output of the device will be disabled and the IS supply current will
drop to IS disabled specification in Table I. For best isolation, the disable pin should be pulled to as low as possible, ideally
the -VS supply rail.
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NOTES:
NC = No connection.
DISABLE has an active low input.
FIGURE 1. Terminal connections and block dia gram.
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4. VERIFICATION
4.1 Sampling and inspection. F or device classes Q and V, sampling and inspection pr ocedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in
accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualific ation and technology conformance inspection. For device class M, screening shall be i n
accordance with method 5004 of MIL-STD-883, and shall b e conducted on all devices prior to qualit y co nformance inspection.
4.2.1 Additional criteria for device class M.
a. Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition B. The test circuit shall be m aintained by the manufacturer under document revisio n leve l control
and shall be made av ailable to the preparing or acquir ing activity upon request. The test circuit shall specif y the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method
1015 of MIL-STD-883.
(2) TA = +125C, minimum.
b. Interim and final electrical test parameters shall be as specified in table IIA herei n.
4.2.2 Additional criteria for device classes Q and V.
a. The burn-in test duration, test condition and test temperature, or approved alternatives shall b e as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level contro l of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordanc e wit h the inte nt specified in
method 1015 of MIL-STD-883.
b. Interim and final electrical test parameters shall be as specified in table IIA herei n.
c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shal l be in
accordance with MIL-PRF-38535. Inspectio ns to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technolog y conformance inspection for classes Q and V shall be in accor dance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for
device class M shall be in acc ordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed
for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspectio ns
(see 4.4.1 through 4.4.4).
4.4.1 Group A inspection.
a. Tests shall be as specifi ed in table IIA herein.
b. Subgroups 4, 5, 6, 7, 8, 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted.
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TABLE IIA. Electrical test requirements.
Test requirements Subgroups
(in accordance with
MIL-STD-883,
method 5005, table I)
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
class M Device
class Q Device
class V
Interim electrical
parameters (see 4.2) --- --- 1
Final electrical
parameters (see 4.2) 1,2,3 1/ 1,2,3 1/ 1,2,3 2/
Group A test
requirements (see 4.4) 1,2,3 1,2,3 1,2,3
Group C end-point electrical
parameters (see 4.4) 1 1 1,2,3 2/
Group D end-point electrical
parameters (see 4.4) 1 1 1,2,3
Group E end-point electrical
parameters (see 4.4) --- 1 1
1/ PDA applies to subgroup 1.
2/ Delta limits as specified in TABLE IIB shall be comp uted with reference to the previous interim
electrical parameters. Delta parameters are excluded from PDA.
TABLE IIB. Burn-in and operating life test de lta parameters. 1/
Parameter Delta limits Units
IS 1 mA
VOS 1 mV
IIB 0.5 A
1/ Deltas are performed at room temperature.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA here in.
4.4.2.1 Additio nal criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-88 3:
a. Test condition B. The test circuit shall be maintained by the manufacturer under document revision leve l control and
shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs,
outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
b. TA = +125C, minimum.
c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
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4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test conditio n and test tempe r ature,
or approved alternativ es shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-385 35. The
test circuit shall be maintained under docum ent revision level control by the device manufac turer' s TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiri ng or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA here in.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as ra diation hardness assured
(see 3.5 herein).
a. End-point electrical parameter s shall be as specified in table IIA herein.
b. For device classes Q and V, the devices or test vehicl e shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF - 38535, appendix A for the RHA level being tested. All device
classes must meet the postirradiation end-point electrical parameter limits as defined in t able I at TA = +25C 5C,
after exposure, to the subgrou ps specifi ed in table IIA herein.
4.4.4.1 Total dose irradiation testing. T otal dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019, condition A for device type 02, condition D for device t ype 03, and as specified herein.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging sha ll be in accordance with MIL-PRF-38535 for device classes
Q and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended u s e. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), desig n applications, and logistics purposes.
6.1.1 Replace ability. Microcircuits covered by this drawing will replace the same generic device cov ered by a contractor
prepared specification or drawing.
6.1.2 Substitut ability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Cha nge Proposal.
6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system applicatio n requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and
this list will be used for coordinatio n and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should c ontact DLA Land and Maritime -VA, telephone (61 4) 692-0544.
6.4 Comments . Comments on this drawing should be directed to DLA Land and Maritime -VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. T he abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-133 1.
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DSCC FORM 2234
APR 97
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for devic e classes Q and V are listed in QML-38535.
The vendors listed in QML-38535 h ave submitted a certificate of compliance (see 3.6 herein) to DLA Land and Maritime -VA and
have agreed to this drawing.
6.6.2 Approv ed sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 h ave agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DLA Land and Maritime -VA.
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 11-09-08
Approved sources of suppl y for SMD 5962-96839 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 an d QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been subm itted to and accepted by DLA Land and Maritim e -VA. T his information
bulletin is superseded by the ne xt dated revision of MIL-HDBK-103 and QML-38535. DL A Land and Maritime
maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962-9683901MPA 24355 (2) AD8041SQ
5962R9683902VHA 24355 (4) AD8041SL/QMLR
5962R9683902VPA 24355 (4) AD8041SQ/QMLR
5962L9683903VHA 24355 (4) AD8041SL/QMLL
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number m ay not
satisfy the performance requirements of this drawing.
Vendor CAGE Vendor name
number and address
24355 Analog Devices (2)
Route 1 Industrial Park
P.O. Box 9106
Norwood, MA 02062
Point of contact: 804 Woburn Street
Wilmington, MA 01887-3462
24355 Analog Devices (4)
Route 1 Industrial Park
P.O. Box 9106
Norwood, MA 02062
Point of contact: 7910 Triad Center Drive
Greensboro, NC 27409-9605
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoeve r for any inaccuracies in the
information bulletin.
