5SNA1600N170100 - Abb Switzerland Ltd. Semiconductors

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

VCE = 1700

V

IC = 1600

A

Doc. No. 5SYA1564-01 Oct 06

• Low-loss, rugged SPT chip-set

• Smooth switching SPT chip-set for

good EMC

• Industry standard package

• High power density

• AlSiC base-plate for high power

cycling capability

• AlN substrate for low thermal

resistance

Maximum rated values 1)

Parameter Symbol Conditions min max

Unit

Collector-emitter voltage VCES VGE = 0 V, Tvj ≥ 25 °C 1700

V

DC collector current IC Tc = 80 °C 1600

A

Peak collector current ICM tp = 1 ms, Tc = 80 °C 3200

A

Gate-emitter voltage VGES -20 20 V

Total power dissipation Ptot Tc = 25 °C, per switch (IGBT) 9100

W

DC forward current IF 1600

A

Peak forward current IFRM 3200

A

Surge current IFSM VR = 0 V, Tvj = 125 °C,

tp = 10 ms, half-sinewave 13200

A

IGBT short circuit SOA tpsc VCC = 1200 V, V CEM CHIP ≤ 1700 V

VGE ≤ 15 V, Tvj ≤ 125 °C 10 µs

Isolation voltage Visol 1 min, f = 50 Hz 4000

V

Junction temperature Tvj 150 °C

Junction operating temperature Tvj(op) -40 125 °C

Case temperature Tc -40 125 °C

Storage temperature Tstg -40 125 °C

Ms Base-heatsink, M6 screws 4 6

Mt1 Main terminals, M8 screws 8 10

Mounting torques 2) Mt2 Auxiliary terminals, M4 screws 2 3 Nm

1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747

2) For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01

ABB HiPak

TM

IGBT Module

5SNA 1600N170100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1564-01 Oct 06 page 2 of 9

IGBT characteristic values 3)

Parameter Symbol Conditions min typ max

Unit

Collector (-emitter)

breakdown voltage V(BR)CES V

GE = 0 V, IC = 10 mA, Tvj = 25 °C 1700

V

Tvj = 25 °C 2.0 2.3 2.6 V

Collector-emitter 4)

saturation voltage VCE sat IC = 1600 A, VGE = 15 V Tvj = 125 °C 2.3 2.6 2.9 V

Tvj = 25 °C 8 mA

Collector cut-off current ICES VCE = 1700 V, VGE = 0 V Tvj = 125 °C 80 mA

Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C -500

500 nA

Gate-emitter threshold voltage VGE(TO) IC = 160 mA, VCE = VGE, Tvj = 25 °C 4.5 6.5 V

Gate charge Qge IC = 1600 A, VCE = 900 V,

VGE = -15 V .. 15 V 14.6 µC

Input capacitance Cies 152

Output capacitance Coes 14.6

Reverse transfer capacitance Cres

VCE = 25 V, VGE = 0 V, f = 1 MHz,

Tvj = 25 °C 6.4 nF

Tvj = 25 °C 290

Turn-on delay time td(on) Tvj = 125 °C 300 ns

Tvj = 25 °C 175

Rise time tr

VCC = 900 V,

IC = 1600 A,

RG = 0.82 Ω,

VGE = ±15 V,

Lσ = 50 nH, inductive load Tvj = 125 °C 190 ns

Tvj = 25 °C 1050

Turn-off delay time td(off) Tvj = 125 °C 1140

ns

Tvj = 25 °C 150

Fall time tf

VCC = 900 V,

IC = 1600 A,

RG = 0.82 Ω,

VGE = ±15 V,

Lσ = 50 nH, inductive load Tvj = 125 °C 170 ns

Tvj = 25 °C 380

Turn-on switching energy Eon VCC = 900 V, IC = 1600 A,

VGE = ±15 V, RG = 0.82 Ω,

Lσ = 50 nH, inductive load Tvj = 125 °C 530 mJ

Tvj = 25 °C 460

Turn-off switching energy Eoff VCC = 900 V, IC = 1600 A,

VGE = ±15 V, RG = 0.82 Ω,

Lσ = 50 nH, inductive load Tvj = 125 °C 590 mJ

Short circuit current ISC tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,

VCC = 1200 V, VCEM CHIP ≤ 1700 V 7200

A

Module stray inductance Lσ CE 15 nH

TC = 25 °C 0.10

Resistance, terminal-chip RCC’+EE’ T

C

= 125 °C 0.13 mΩ

3) Characteristic values according to IEC 60747 – 9

4) Collector-emitter saturation voltage is given at chip level

5SNA 1600N170100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1564-01 Oct 06 page 3 of 9

Diode characteristic values 5)

Parameter Symbol Conditions min typ max

Unit

Tvj = 25 °C 1.65 2.0

Forward voltage 6) VF IF = 1600 A Tvj = 125 °C 1.7 2.0 V

Tvj = 25 °C 1090

Reverse recovery current Irr Tvj = 125 °C 1400

A

Tvj = 25 °C 390

Recovered charge Qrr Tvj = 125 °C 690 µC

Tvj = 25 °C 620

Reverse recovery time trr Tvj = 125 °C 830 ns

Tvj = 25 °C 280

Reverse recovery energy Erec

VCC = 900 V,

IF = 1600 A,

VGE = ±15 V,

RG = 0.82 Ω

Lσ = 50 nH

inductive load

Tvj = 125 °C 480 mJ

5) Characteristic values according to IEC 60747 – 2

6) Forward voltage is given at chip level

Thermal properties 7)

Parameter Symbol Conditions min typ max

Unit

IGBT thermal resistance

junction to case Rth(j-c)IGBT 0.011

K/W

Diode thermal resistance

junction to case Rth(j-c)DIODE

0.018

K/W

IGBT thermal resistance 2)

case to heatsink Rth(c-s)IGBT

IGBT per switch, λ grease = 1W/m x K 0.012

K/W

Diode thermal resistance 7)

case to heatsink Rth(c-s)DIODE

Diode per switch, λ grease = 1W/m x K 0.024

K/W

2) For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01

Mechanical properties 7)

Parameter Symbol Conditions min typ max

Unit

Dimensions L x W x H

Typical , see outline drawing 130 x 140 x 38 mm

Term. to base:

19

Clearance distance in air da according to IEC 60664-1

and EN 50124-1 Term. to term:

19 mm

Term. to base:

32

Surface creepage distance ds according to IEC 60664-1

and EN 50124-1 Term. to term:

32 mm

Mass m 920 g

7) Thermal and mechanical properties according to IEC 60747 – 15

5SNA 1600N170100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1564-01 Oct 06 page 4 of 9

Electrical configuration

Outline drawing 2)

Note: all dimensions are shown in mm

2) For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01

This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.

This product has been designed and qualified for industrial level.

5SNA 1600N170100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1564-01 Oct 06 page 5 of 9

0

400

800

1200

1600

2000

2400

2800

3200

0 1 2 3 4 5

VCE [V]

IC [A]

VGE = 15 V

125 °C

25 °C

0

400

800

1200

1600

2000

2400

2800

3200

012345678910111213

VGE [V]

IC [A]

125 °C

25 °C

VCE = 25 V

Fig. 1 Typical on-state characteristics, chip level Fig. 2 Typical transfer characteristics, chip level

0

400

800

1200

1600

2000

2400

2800

3200

0123456

VCE [V]

IC [A]

9V

11V

13V

15V

17V

Tvj = 25 °C

0

400

800

1200

1600

2000

2400

2800

3200

0123456

VCE [V]

IC [A]

Tvj = 125 °C

11V

9V

13V

17V

15V

Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level

5SNA 1600N170100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1564-01 Oct 06 page 6 of 9

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

01000 2000 3000 4000

IC [A]

Eon, Eoff [J]

VCC = 900 V

VCEM

≤ 1700 V

RG = 0.82 ohm

VGE = ±15 V

Tvj = 125 °C

Lσ = 50 nH

Eon

Eoff

E

sw

[mJ] = 1.63 x 10

-4

x I

C2

+0.275 x I

C

+ 258

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

012345678910111213

RG [ohm]

Eon, Eoff [J]

Eon

Eoff

VCC = 900 V

VCEM ≤ 1700 V

IC = 1600 A

VGE = ±15 V

Tvj = 125 °C

Lσ = 50 nH

Fig. 5 Typical switching energies per pulse

vs collector current Fig. 6 Typical switching energies per pulse

vs gate resistor

0.01

0.1

1

10

0 1000 2000 3000 4000

IC [A]

td(on), tr, td(off), tf [µs]

VCC = 900 V

VCEM ≤ 1700 V

RG = 0.82 ohm

VGE = ±15 V

Tvj = 125 °C

Lσ = 50 nH

td(on)

td(off)

tr

tf

0.1

1

10

0 1 2 3 4 5 6 7 8 9 10111213

RG [ohm]

td(on), tr, td(off), tf [µs]

VCC = 900 V

VCEM ≤ 1700 V

IC = 1600 A

VGE = ±15 V

Tvj = 125 °C

Lσ = 50 nH

td(on)

td(off)

tf

tr

Fig. 7 Typical switching times

vs collector current Fig. 8 Typical switching times

vs gate resistor

5SNA 1600N170100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1564-01 Oct 06 page 7 of 9

1

10

100

1000

0 5 10 15 20 25 30 35

VCE [V]

C [nF]

VGE = 0 V

fOSC = 1 MHz

VOSC = 50 mV

Cies

Coes

Cres

0

5

10

15

20

0 2 4 6 8 10 12

Qg [µC]

VGE [V]

V

CC

= 900 V

VCC = 1300 V

IC = 1600 A

Tvj = 25 °C

Fig. 9 Typical capacitances

vs collector-emitter voltage Fig. 10 Typical gate charge characteristics

0

0.5

1

1.5

2

2.5

0500 1000 1500 2000

VCE [V]

ICpulse / IC

Chip

Module

VCC ≤ 1200 V, Tvj = 125 °C

VGE = ±15 V, RG = 0.82 ohm

Fig. 11 Turn-off safe operating area (RBSOA)

5SNA 1600N170100

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1564-01 Oct 06 page 8 of 9

0

200

400

600

800

1000

1200

1400

1600

1800

0 1000 2000 3000 4000

IF [A]

Erec [mJ], Irr [A], Qrr [µC]

VCC = 900 V

RG = 0.82 ohm

Tvj = 125 °C

Lσ = 50 nH

Erec

Qrr

Irr

E

rec

[mJ] = -4 x 10

-5

x I

F2

+ 0.314 x I

F

+ 95

0

100

200

300

400

500

600

700

800

0 1 2 3 4 5 6 7 8 9 1011

di/dt [kA/µs]

Erec [mJ], Qrr [µC]

0

200

400

600

800

1000

1200

1400

1600

Irr [A]

RG = 0.82 Ω

RG = 0.56 Ω

RG

= 1.2 Ω

RG

= 2.2 Ω

RG

= 4.7 Ω

RG

= 6.8 Ω

RG = 12 Ω

Erec

Qrr

Irr

VCC = 900 V

IC = 1600 A

Tvj = 125 °C

Lσ = 50 nH

Fig. 12 Typical reverse recovery characteristics

vs forward current Fig. 13 Typical reverse recovery characteristics

vs di/dt

0

400

800

1200

1600

2000

2400

2800

3200

0 0.5 1 1.522.5

VF [V]

IF [A]

125°C

25°C

0

400

800

1200

1600

2000

2400

2800

3200

3600

0 500 1000 1500 2000

VR [V]

IR [A]

VCC ≤ 1200 V

di/dt ≤ 8 kA/µs

Tvj = 125 °C

Fig. 14 Typical diode forward characteristics,

chip level Fig. 15 Safe operating area diode (SOA)

5SNA 1600N170100

ABB Switzerland Ltd, Semiconductors reserves the rig

ht to change specifications without notice.

ABB Switzerland Ltd Doc. No. 5SYA1564-01 Oct 06

Semiconductors

Fabrikstrasse 3

CH-5600 Lenzburg, Switzerland

Telephone +41 (0)58 586 1419

Fax +41 (0)58 586 1306

Email abbsem@ch.abb.com

Internet www.abb.com/semiconductors

Analytical function for transient thermal

impedance:

)e-(1R = (t)Z n

1i

t/-

ic)-(jth ∑

=

i

τ

i 1 2 3 4

Ri(K/kW) 7.59 1.8 0.743 0.369

IGBT

τi(ms) 202 20.3 2.01 0.52

Ri(K/kW) 12.6 2.89 1.3 1.26

DIODE

τi(ms) 210 29.6 7.01 1.49

0.0001

0.001

0.01

0.1

0.001 0.01 0.1 1 10

t [s]

Zth(j-c) [K/W] IGBT, DIODE

Zth(j-c) IGBT

Zth(j-c) Diode

Fig. 16 Thermal impedance vs time

For detailed information refer to:

• 5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays

• 5SYA 2043-01 Load – cycle capability of HiPaks

• 5SZK 9120-00 Specification of environmental class for HiPak (available upon request)