Data Sheet 1 of 11 Rev. 04, 2007-10-31
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
PTFA191001E
PTFA191001F
Confidential, Limited Internal Distribution
Description
The PTFA191001E and PTFA191001F are thermally-enhanced,
100-watt, internally-matched LDMOS FETs intended for WCDMA,
IS-95 and CDMA2000 applications. They are characterized for single-
and two-carrier WCDMA operation from 1930 to 1990 MHz.
Thermally-enhanced packaging provides the coolest operation
available.
PTFA191001E
Package H-36248-2
Thermally-Enhanced High Power RF LDMOS FETs
100 W, 1930 – 1990 MHz
PTFA191001F
Package H-37248-2
Features
•Thermally-enhanced packages, Pb-free and
RoHS-compliant
•Broadband internal matching
•Typical two-carrier WCDMA performance at 1960
MHz, 30 V
- Average output power = 25 W
- Linear Gain = 17.0 dB
- Efficiency = 27.5%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –41.0 dBc
•Typical two-carrier IS-95 performance at 1930
MHz, 30 V
- Average output power = 25 W
- Efficiency = 28%
- Intermodulation distortion = –35 dBc @ 1.2288
- Adjacent channel power = –51 dBm
•Typical CW performance, 1960 MHz, 30 V
- Output power at P–1dB = 130 W
- Efficiency = 56%
•Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•Excellent thermal stability, low HCI drift
•Capable of handling 10:1 VSWR @ 30 V,
100 W (CW) output power
Two-carrier WCDMA Drive-up
VDD = 30 V, IDQ
= 900 mA, ƒ = 1960 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-53
-48
-43
-38
-33
-28
-23
34 36 38 40 42 44 46
Average Output Power (dBm)
IM3 (dBc), ACPR (dBc)
5
10
15
20
25
30
35
Drain Efficiency (%)
ACPR
Efficiency
IM3
*See Infineon distributor for future availability.
Data Sheet 2 of 11 Rev. 04, 2007-10-31
PTFA191001E
PTFA191001F
Confidential, Limited Internal Distribution
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 900 mA, POUT = 44 dBm average
ƒ1 = 1955 MHz, ƒ2 = 1965 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps 16 17.0 —dB
Drain Efficiency ηD26 28 —%
Intermodulation Distortion IMD —–37 –35 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.08 —Ω
Operating Gate Voltage VDS = 28 V, IDQ = 900 mA VGS 2.0 2.5 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ200 °C
Total Device Dissipation PD417 W
Above 25°C derate by 2.38 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 100 W CW) RθJC 0.42 °C/W
*See Infineon distributor for future availability.
Data Sheet 3 of 11 Rev. 04, 2007-10-31
PTFA191001E
PTFA191001F
Confidential, Limited Internal Distribution
Broadband Performance
VDD = 30 V, IDQ = 900 mA, POUT = 44.0 dBm
10
15
20
25
30
35
1900 1920 1940 1960 1980 2000 2020
Frequency (MHz)
Gain (dB), Efficiency (%)
-35
-30
-25
-20
-15
-10
-5
Input Return Loss (dB)
Gain
Efficiency
Return Loss
Two-carrier WCDMA at Selected Biases
VDD = 30 V, ƒ = 1960 MHz, 3GPP WCDMA signal,
P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ
-55
-50
-45
-40
-35
-30
34 36 38 40 42 44 46
Output Power, PEP (dBm)
3rd Order IMD (dBc)
900 mA
800 mA
1.0 A 1.1 A
Typical Performance (data taken in a production test fixture)
Ordering Information
Type and Version Package Type Package Description Marking
PTFA191001E V4 H-36248-2 Thermally-enhanced slotted flange, single-ended PTFA191001E
PTFA191001F V4 H-37248-2 Thermally-enhanced earless flange, single-ended PTFA191001F
Data Sheet 4 of 11 Rev. 04, 2007-10-31
PTFA191001E
PTFA191001F
Confidential, Limited Internal Distribution
Intermodulation Distortion Products
vs. Tone Spacing
VDD = 30 V IDQ = 900 mA, ƒ = 1960 MHz,
POUT = 49.5 dBm PEP
-60
-55
-50
-45
-40
-35
-30
-25
0 10 20 30 40
Tone Spacing (MHz)
Intermodulation Distortion (dBc)
3rd Order
5th
7th
Voltage Sweep
IDQ = 900 mA, ƒ = 1960 MHz,
tone spacing = 1 MHz, POUT (PEP) = 50 dBm
-45
-40
-35
-30
-25
-20
-15
-10
23 24 25 26 27 28 29 30 31 32 33
Supply Voltage (V)
3rd Order Intermodulation
Distortion (dBc)
10
15
20
25
30
35
40
45
50
55
Gain
Efficiency
IM3 Up
Gain (dB), Drain Efficiency (%)
Typical Performance (cont.)
Single-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 900 mA, ƒ = 1960 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping,
PAR = 8.5 dB, 3.84 MHz BW
-55
-50
-45
-40
-35
33 35 37 39 41 43 45
Average Output Power (dBm)
0
10
20
30
40
Drain Efficiency (%)
Efficiency
ACPR ACPR Up
ACPR Low
Power Sweep, CW Conditions
VDD = 30 V, IDQ = 900 mA, ƒ = 1960 MHz
14
15
16
17
18
020 40 60 80 100 120
Output Power (W)
Gain (dB)
10
20
30
40
50
60
Drain Efficiency (%)
Gain
Efficiency TCASE = 25°C
TCASE = 90°C
Data Sheet 5 of 11 Rev. 04, 2007-10-31
PTFA191001E
PTFA191001F
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Z Source Z Load
G
S
D
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
1900 5.41 –4.79 2.88 2.91
1930 5.23 –4.54 2.81 3.18
1960 5.05 –4.32 2.77 3.39
1990 4.92 –4.06 2.80 3.63
2020 4.79 –3.81 2.73 3.89
0.2
0.1
0.2
0.1
-
W
AV
E
LE
N
GT
H
ST
O
W
AR
D
G
E
NE
R
AT
O
R
--->
-
-
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
0.1
Z Load
Z Source
2020 MHz 1900 MHz
2020 MHz
1900 MHz
Z0 = 50 Ω
IS-95 Two-carrier NCDMA Drive-up
VDD = 30 V, IDQ = 900 mA,
ƒ1 = 1962.5 MHz, ƒ2 = 1960 MHz
-55
-50
-45
-40
-35
-30
-25
-20
36.0 38.0 40.0 42.0 44.0
Average Output Power (dBm)
0
5
10
15
20
25
30
35
Drain Efficiency (%)
Efficiency
IMD Low
Intermodulation Distortion (dBc)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 0 20 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage (V)
0.2 A
0.6 A
1.0 A
1.5 A
3.0 A
4.5 A
6.0 A
7.5 A
9.0 A
Typical Performance (cont.)
Data Sheet 6 of 11 Rev. 04, 2007-10-31
PTFA191001E
PTFA191001F
Confidential, Limited Internal Distribution
Reference Circuit
Reference circuit schematic for ƒ = 1960 MHz
Circuit Assembly Information
DUT PTFA191001E or PTFA191001F LDMOS Transistor
PCB 0.76 mm [.030”] thick, εr = 4.5 Rogers TMM4 2 oz. copper
Microstrip Electrical Characteristics at 1960 MHz1Dimensions: L x W (mm) Dimensions: L x W (in.)
l10.352 λ, 50.4 Ω29.31 x 1.42 1.154 x 0.056
l20.183 λ, 38.0 Ω14.86 x 2.16 0.585 x 0.085
l30.016 λ, 11.4 Ω1.22 x 10.19 0.048 x 0.401
l40.026 λ, 60.0 Ω2.16 x 0.99 0.085 x 0.039
l50.213 λ, 60.0 Ω18.03 x 0.99 0.710 x 0.039
l60.069 λ, 6.9 Ω5.11 x 17.86 0.201 x 0.703
l70.289 λ, 54.5 Ω24.16 x 1.24 0.951 x 0.049
l80.289 λ, 54.5 Ω24.16 x 1.24 0.951 x 0.049
l90.040 λ, 5.0 Ω2.95 x 25.40 0.116 x 1.000
l10 (taper) 0.050 λ, 5.0 Ω / 11.8 Ω3.81 x 25.40 / 9.80 0.150 x 1.000 / 0.386
l11 (taper) 0.027 λ, 11.8 Ω / 31.0 Ω2.18 x 9.80 / 2.84 0.086 x 0.386 / 0.112
l12 0.009 λ, 31.0 Ω0.76 x 2.87 0.030 x 0.113
l13 0.034 λ, 41.0 Ω2.82 x 1.91 0.111 x 0.075
l14 0.086 λ, 41.0 Ω7.06 x 1.91 0.278 x 0.075
l15 0.364 λ, 50.4 Ω30.33 x 1.42 1.194 x 0.056
1Electrical characteristics are rounded.
R3
2K VR4
2K V
C3
0.001µF
C2
0.001µF
BCP56
R2
1.3KVR1
1.2K V
LM7805
C1
0.001µF
VDD
QQ1
Q1
R5
10 V
1µF
5.1KV
R6
R7 C6
V5.1K
10 µF
35V
C4 C5
0.1µF
A191001ef_sch
10 pF
l1l2l3l6
l4
10 V
R9
C9
DUT
l5
10 pF
C8
10 pF
1 µF 10 µF
50V
10 pF 0.02 µF
1.0 pF
1.0 pF
1.5 pF
10 pF 1 µF 10 µF
0.02 µF
VDD
l7
l8
l9l13 l14 l15
C10 C11 C12 C13
C18
C19 C20
C21
C17C16
C15
C14
l10 l11
50V
l12
RF_IN RF_OUT
2KV
R8
0.01µF
C7
Data Sheet 7 of 11 Rev. 04, 2007-10-31
PTFA191001E
PTFA191001F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4 Tantalum capacitor, 10 µF, 35 V Digi-Key PCS6106TR-ND
C5 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C6, C11, C15 Capacitor, 1.0 µF Digi-Key 920C 105
C7 Capacitor, 0.01 µF Digi-Key 200B 103
C8, C9, C10, C14, Capacitor (ceramic), 10 pF ATC 100B 100
C21
C12, C16 Capacitor, 0.02 µF Digi-Key 200B 203
C13, C17 Tantalum capacitor, 10 µF, 50 V Garrett Electronics TPS106K050R0400
C18, C19 Capacitor (ceramic), 1.0 pF ATC 100B 1R0
C20 Capacitor (ceramic), 1.5 pF ATC 100B 1R5
Q1 Transistor Infineon BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip resistor, 1.2 k-ohms Digi-Key P1.2KGCT-ND
R2 Chip resistor, 1.3 k-ohms Digi-Key P1.3KGCT-ND
R3, R8 Chip resistor, 2 k-ohms Digi-Key P2KECT-ND
R4 Potentiometer, 2 k-ohms Digi-Key 3224W-202ETR-ND
R5, R9 Chip resistor, 10 ohms Digi-Key P10ECT-ND
R6, R7 Chip resistor, 5.1 k-ohms Digi-Key P5.1KECT-ND
See next page for reference circuit assembly diagram
Data Sheet 8 of 11 Rev. 04, 2007-10-31
PTFA191001E
PTFA191001F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
*Gerber Files for this circuit available on request
Reference circuit assembly diagram* (not to scale)
A191001ef_assy
LM
10
35V
+
C1
C2
R1
R2
R8
C3
C4 R3
R4
R5
R7
RF_IN RF_OUT
C8
QQ1
R6 Q1
C9
C5
R9
C12 C13
C11
C10
C15
C14
VDD
C18
C21
C19
C20
C17
C16
VDD
VDD
C6
C7
A191001ef_dtl
C1
QQ1
VDD
R1
R2
R3
R6
C4
R7
C2
C3
C5
R5
R4
Q1
+LM
R8
C8
C6
C7
Data Sheet 9 of 11 Rev. 04, 2007-10-31
PTFA191001E
PTFA191001F
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-36248-2
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness, Package H-36248-2:
S, D, G - flange & leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
C
L
34.04
[1.340]
19.81±0.20
[.780±.008]
1.02
[.040]
19.43 ±0.51
[.765±.020]
(45° X 2.72
[.107])
2X 12.70
[.500]
2X 4.83±0.51
[.190±.020]
27.94
[1.100]
4X R1.52
[.060]
2X R1.63
[.064]
D
G
S
FLANGE 9.78
[.385]
0.0381 [.0015] -A-
248-cases: h-30248-2_po
C
L
C
L
3.61±0.38
[.142±.015]
SPH 1.57
[.062]
[.370 ]
+.004
–.006
LID 9.40 +0.10
–0.15
Data Sheet 10 of 11 Rev. 04, 2007-10-31
PTFA191001E
PTFA191001F
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.)
Package H-37248-2
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6Gold plating thickness:
S, D, G - flange & leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
C
L
0.0381 [.0015]
2X 12.70
[.500]
19.43±0.51
[.765±.020]
19.81±0.20
[.780±.008]
SPH 1.57
[.062]
FLANGE 9.78
[.385]
S
G
D
( 45° X 2.72
[.107])
20.57
[.810]
-A-
3.61±0.38
[.142±.015]
1.02
[.040]
2X 4.83±0.51
[.190±.020]
248-cases: h-31248-2_po
C
L
C
L
[R.020 ]
+.015
–.005
4X R0.508 +0.381
–0.127
LID 9.40+0.10
–0.15
[.370 ]
+.004
–.006
Data Sheet 11 of 11 Rev. 04, 2007-10-31
PTFA191001E/F
Confidential, Limited Internal Distribution
Revision History: 2007-10-31 Data Sheet
Previous Version: Rev. 02, 2005-08-11, Data Sheet; Rev. 03, 2007-06-25
Page Subjects (major changes since last revision)
1, 10 Update company information.
1, 3, 9, 10 Update to product V4, with new package technologies. Update package outline diagrams.
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2007-10-31
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2004.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any
third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
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