SKiM®4
IGBT Modules
SKiM 300GD063D
Preliminary Data
Features
  
   
  ! !"  # $
% & ' (!)*+
,  ,,
 #-.)/++ 0,12 !
+3.4+) ,  #56/ 0!2
7-4/)848#
Typical Applications
9    /-- :;<
, "
! !,     )-
:;<
GD
Absolute Maximum Ratings = )8> !  ,
Symbol Conditions Values Units
IGBT
 #--
= )8 0.-2 > )7- 0/5-2 (
@ = )8 0.-2 > = /  75- 0+#-2 (
 A )-
B0"2 7- 666 C /8- 0/)82 >
 $6  "  >
! ( / 6 )8--
Inverse diode
D= )8 0.-2 > )77 0/582 (
D@ =@ = )8 0.-2 > = /  75- 0+#-2 (
D@ = /- E 6E B= /8- > )F-- (
Characteristics = )8 > !  ,
Symbol Conditions min. typ. max. Units
IGBT
02  = E = 5 ( 7 8 8 8 # 8
  = -E  = E
B= )8 >
- + (
* B= )8 > - F 0- 52
 B= )8 02 > ) F 0+ F2 G
 = )-- (E  = /8
B= )8 0/)82 >   !!
/ 8 0/ #2 / .
  = -E  = )8 E = / @;< )+ D
  = -E  = )8 E = / @;< ) 8 D
  = -E  = )8 E = / @;< / 8 D
H )- ;
9ICI  ! = )8 0/)82 > / 8 0/ #2 G
,02  = +-- /+- 
= +-- ( .8 
,02 9 = 9 = 5 G .-- 
B= /)8 > 8- 
 02  A /8 /# 8 0/7 82 J
 02  3; #E B= >
 = E = (
J
Inverse diode
D=  D= )-- (E  = - E
B= )8 0/)82 >
/ )8 0/ )2 / 7
* B= )8 0/)82 > 0- 582 0- F2
B= )8 0/)82 > 0/ #2 0) .82 K
99@ D= +-- (E B= /)8 > ))8 (
L  = - ,4, = +.-- (4M +- M
 9 = 9 = 5 G 8 J
Thermal characteristics
90B2   - ) 34N
90B2  DN% - )58 34N
Temperature Sensor
9 = )8 0/--2 > / 0/ #.2 :G
! = )8 0/--2 > + 0)2 O
Mechanical data
@/ : 0@82 ) + 
@) ! 0@#2 7 8 
+/- "
SKiM 300GD063D
1 19-03-2004 SCT © by SEMIKRON
Fig. 1 Output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC= f (TC)
Fig. 3 Turn-on /-off energy = f (IC) Fig. 4 Turn-on /-off energy = f (RG)
Fig. 5 Transfer characteristic Fig. 6 Gate charge characteristic
SKiM 300GD063D
2 19-03-2004 SCT © by SEMIKRON
Fig. 7 Switching times vs. ICFig. 8 Switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Zth(j-s) = f (tp);D=tp/tc= tp* f
Fig. 10 Transient thermal impedance of FWD
Zth(j-s) = f (tp);D=tp/tc= tp* f
Fig. 11 CAL diode forward characteristic, incl. RCC'+ EE' Fig. 12 CAL diode peak reverse recovery current
SKiM 300GD063D
3 19-03-2004 SCT © by SEMIKRON
Fig. 13 Typ. CAL diode recovered charge
Dimensions in mm
 %
%  %
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SKiM 300GD063D
4 19-03-2004 SCT © by SEMIKRON