Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.3
www.infineon.com 2018-03-29
IHW20N135R3
ResonantSwitchingSeries
ReverseconductingIGBTwithmonolithicbodydiode
Features:
•Offersnewhigherbreakdownvoltageto1350Vforimproved
reliability
•Powerfulmonolithicbodydiodewithlowforwardvoltage
designedforsoftcommutationonly
•TRENCHSTOPTMtechnologyoffering:
-verytightparameterdistribution
-highruggedness,temperaturestablebehavior
-lowVCEsat
-easyparallelswitchingcapabilityduetopositive
temperaturecoefficientinVCEsat
•LowEMI
•QualifiedaccordingtoJESD-022fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogenfree(accordingtoIEC61249-2-21)
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•Inductivecooking
•Inverterizedmicrowaveovens
•Resonantconverters
•Softswitchingapplications
Packagepindefinition:
•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter
G
C
E
G
C
E
KeyPerformanceandPackageParameters
Type VCE ICVCEsat,Tvj=25°C Tvjmax Marking Package
IHW20N135R3 1350V 20A 1.6V 175°C H20R1353 PG-TO247-3
Datasheet 2 V2.3
2018-03-29
IHW20N135R3
ResonantSwitchingSeries
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Datasheet 3 V2.3
2018-03-29
IHW20N135R3
ResonantSwitchingSeries
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter Symbol Value Unit
Collector-emitter voltage VCE 1350 V
DCcollectorcurrent,limitedbyTvjmax
Tc=25°C
Tc=100°C
IC40.0
20.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 60.0 A
TurnoffsafeoperatingareaVCE≤1350V,Tvj≤175°C - 60.0 A
Diodeforwardcurrent,limitedbyTvjmax
Tc=25°C
Tc=100°C
IF40.0
20.0
A
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 60.0 A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20
±25 V
PowerdissipationTc=25°C
PowerdissipationTc=100°C Ptot 310.0
155.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+175 °C
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s 260 °C
Mounting torque, M3 screw
Maximum of mounting processes: 3 M0.6 Nm
ThermalResistance
Value
min. typ. max.
Parameter Symbol Conditions Unit
RthCharacteristics
IGBT thermal resistance,
junction - case Rth(j-c) - - 0.48 K/W
Diode thermal resistance,
junction - case Rth(j-c) - - 0.48 K/W
Thermal resistance
junction - ambient Rth(j-a) - - 40 K/W
Datasheet 4 V2.3
2018-03-29
IHW20N135R3
ResonantSwitchingSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1350 - - V
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=20.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
1.60
1.80
1.90
1.80
-
-
V
Diode forward voltage VF
VGE=0V,IF=20.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
1.60
1.73
1.80
1.80
-
-
V
Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 5.1 5.8 6.4 V
Zero gate voltage collector current ICES
VCE=1350V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
-
-
100
2500
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=20.0A - 14.8 - S
Integrated gate resistor rGnone Ω
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 1500 -
Output capacitance Coes - 55 -
Reverse transfer capacitance Cres - 45 -
VCE=25V,VGE=0V,f=1MHz pF
Gate charge QGVCC=1080V,IC=20.0A,
VGE=15V - 195.0 - nC
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°C
Turn-off delay time td(off) - 335 - ns
Fall time tf- 50 - ns
Turn-off energy Eoff - 1.30 - mJ
Tvj=25°C,
VCC=600V,IC=20.0A,
VGE=0.0/15.0V,
RG(on)=15.0Ω,RG(off)=15.0Ω,
Lσ=175nH,Cσ=40pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Datasheet 5 V2.3
2018-03-29
IHW20N135R3
ResonantSwitchingSeries
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=175°C
Turn-off delay time td(off) - 405 - ns
Fall time tf- 100 - ns
Turn-off energy Eoff - 2.25 - mJ
Tvj=175°C,
VCC=600V,IC=20.0A,
VGE=0.0/15.0V,
RG(on)=15.0Ω,RG(off)=15.0Ω,
Lσ=175nH,Cσ=40pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Datasheet 6 V2.3
2018-03-29
IHW20N135R3
ResonantSwitchingSeries
Figure 1. Collectorcurrentasafunctionofswitching
frequency
(Tvj≤175°C,D=0.5,VCE=600V,VGE=0/15V,
RG=15Ω)
f,SWITCHINGFREQUENCY[kHz]
IC,COLLECTORCURRENT[A]
1 10 100 1000
0
10
20
30
40
50
60
70
TC=80°
TC=110°
Figure 2. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C;VGE=15V)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
1 10 100 1000
0.1
1
10
100
tp=1µs
5µs
10µs
50µs
1ms
10ms
DC
Figure 3. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot,POWERDISSIPATION[W]
25 50 75 100 125 150 175
0
50
100
150
200
250
300
350
Figure 4. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
TC,CASETEMPERATURE[°C]
IC,COLLECTORCURRENT[A]
25 50 75 100 125 150 175
0
5
10
15
20
25
30
35
40
45
Datasheet 7 V2.3
2018-03-29
IHW20N135R3
ResonantSwitchingSeries
Figure 5. Typicaloutputcharacteristic
(Tvj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
012345
0
10
20
30
40
50
60
VGE=20V
17V
15V
13V
11V
9V
7V
Figure 6. Typicaloutputcharacteristic
(Tvj=175°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
012345
0
10
20
30
40
50
60
VGE=20V
17V
15V
13V
11V
9V
7V
5V
Figure 7. Typicaltransfercharacteristic
(VCE=20V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
0 2 4 6 8 10 12
0
10
20
30
40
50
60
70
Tvj=25°C
Tvj=175°C
Figure 8. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
Tvj,JUNCTIONTEMPERATURE[°C]
VCEsat,COLLECTOR-EMITTERSATURATION[V]
0 25 50 75 100 125 150 175
1.0
1.5
2.0
2.5
3.0
IC=10A
IC=20A
IC=40A
Datasheet 8 V2.3
2018-03-29
IHW20N135R3
ResonantSwitchingSeries
Figure 9. Typicalswitchingtimesasafunctionof
collectorcurrent
(inductiveload,Tvj=175°C,VCE=600V,
VGE=0/15V,RG(on)=15Ω,RG(off)=15Ω,dynamic
test circuit in Figure E)
IC,COLLECTORCURRENT[A]
t,SWITCHINGTIMES[ns]
0 10 20 30 40
10
100
1000
td(off)
tf
Figure 10. Typicalswitchingtimesasafunctionofgate
resistance
(inductiveload,Tvj=175°C,VCE=600V,
VGE=0/15V,IC=20A,dynamictestcircuitin
Figure E)
RG,GATERESISTANCE[Ω]
t,SWITCHINGTIMES[ns]
10 20 30 40 50
10
100
1000
td(off)
tf
Figure 11. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=600V,VGE=0/15V,
IC=20A,RG(on)=15Ω,RG(off)=15Ω,dynamic
test circuit in Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
t,SWITCHINGTIMES[ns]
25 50 75 100 125 150 175
10
100
1000
td(off)
tf
Figure 12. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.5mA)
Tvj,JUNCTIONTEMPERATURE[°C]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
0 25 50 75 100 125 150 175
2
3
4
5
6
7
8
typ.
min.
max.
Datasheet 9 V2.3
2018-03-29
IHW20N135R3
ResonantSwitchingSeries
Figure 13. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=175°C,VCE=600V,
VGE=0/15V,RG(on)=15Ω,RG(off)=15Ω,
dynamic test circuit in Figure E)
IC,COLLECTORCURRENT[A]
E,SWITCHINGENERGYLOSSES[mJ]
0 10 20 30 40
0
1
2
3
4
Eoff
Figure 14. Typicalswitchingenergylossesasa
functionofgateresistance
(inductiveload,Tvj=175°C,VCE=600V,
VGE=0/15V,IC=20A,dynamictestcircuitin
Figure E)
RG,GATERESISTANCE[Ω]
E,SWITCHINGENERGYLOSSES[mJ]
10 20 30 40 50
0
1
2
3
4
Eoff
Figure 15. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=600V,VGE=0/15V,
IC=20A,RG(on)=15Ω,RG(off)=15Ω,dynamic
test circuit in Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
E,SWITCHINGENERGYLOSSES[mJ]
25 50 75 100 125 150 175
0
1
2
3
4
Eoff
Figure 16. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=175°C,VGE=0/15V,
IC=20A,RG(on)=15Ω,RG(off)=15Ω,dynamic
test circuit in Figure E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
400 500 600 700 800 900 1000 1100 1200
0
1
2
3
4
Eoff
Datasheet 10 V2.3
2018-03-29
IHW20N135R3
ResonantSwitchingSeries
Figure 17. Typicalturnoffswitchingenergylossfor
softswitching
(inductiveload,Tvj=175°C,VGE=0/15V,
IC=20A,RG=15Ω,dynamictestcircuitin
Figure E)
dv/dt,VOLTAGESLOPE[V/µs]
E,SWITCHINGENERGYLOSSES[mJ]
100 1000
0.0
0.5
1.0
1.5
2.0
2.5
Tvj=25°C
Tvj=175°C
Figure 18. Typicalgatecharge
(IC=20A)
QGE,GATECHARGE[nC]
VGE,GATE-EMITTERVOLTAGE[V]
0 50 100 150 200
0
2
4
6
8
10
12
14
16
270V
1080V
Figure 19. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,CAPACITANCE[pF]
0 10 20 30 40 50 60 70 80 90 100
10
100
1000
Cies
Coes
Cres
Figure 20. IGBTtransientthermalresistance
(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
9.8E-3
2.8E-5
2
0.01407993
4.7E-5
3
0.0698
2.0E-4
4
0.1158
1.2E-3
5
0.1569
9.9E-3
6
0.1137
0.08835259
Datasheet 11 V2.3
2018-03-29
IHW20N135R3
ResonantSwitchingSeries
Figure 21. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
9.8E-3
2.8E-5
2
0.0141
4.7E-5
3
0.0698
2.0E-4
4
0.1158
1.2E-3
5
0.1569
9.9E-3
6
0.1137
0.08835259
Figure 22. Typicaldiodeforwardcurrentasafunction
offorwardvoltage
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
10
20
30
40
Tvj=25°C
Tvj=175°C
Figure 23. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature
Tvj,JUNCTIONTEMPERATURE[°C]
VF,FORWARDVOLTAGE[V]
25 50 75 100 125 150 175
1.0
1.5
2.0
2.5
3.0
IC=10A
IC=20A
IC=40A
Datasheet 12 V2.3
2018-03-29
IHW20N135R3
ResonantSwitchingSeries
Package Drawing PG-TO247-3
Datasheet 13 V2.3
2018-03-29
IHW20N135R3
ResonantSwitchingSeries
t
ab
td(off) tftr
td(on)
90% IC
10% IC
90% IC
10% VGE
10% IC
t
90% VGE
t
t
90% VGE
VGE(t)
t
t
t
t1t4
2% IC
10% VGE
2% VCE
t2t3
E
t
t
V I t
off = x x d
1
2
CE C
E
t
t
V I t
on = x x d
3
4
CE C
CC
dI /dt
F
dI
I,V
Figure A.
Figure B.
Figure C. Definition of diode switching
characteristics
Figure E. Dynamic test circuit
Figure D.
I (t)
C
Parasitic inductance L ,
parasitic capacitor C ,
relief capacitor C ,
(only for ZVT switching)
s
s
r
t t t
Q Q Q
rr a b
rr a b
= +
= +
QaQb
V (t)
CE
VGE(t)
I (t)
C
V (t)
CE
Testing Conditions
Datasheet 14 V2.3
2018-03-29
IHW20N135R3
ResonantSwitchingSeries
RevisionHistory
IHW20N135R3
Revision:2018-03-29,Rev.2.3
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2011-05-03 Final data sheet
2.2 2015-01-26 Minor changes
2.3 2018-03-29 Fig.12 and Fig.17 minor change of legend
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