Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
Max
16.7 25
40 50
R
θJC
2.5 3
Maximum Junction-to-Case
D
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s R
θJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State °C/W
W
T
A
=70°C 1.6
Junction and Storage Temperature Range -55 to 175
Power Dissipation
A
T
A
=25°C P
DSM
2.5
A
Repetitive avalanche energy L=0.3mH
C
mJ
Power Dissipation
B
T
C
=25°C P
D
W
T
C
=100°C
Avalanche Current
C
Continuous Drain
Current
B,G
Maximum UnitsParameter
T
A
=25°C
G
T
A
=100°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
I
D
Gate-Source Voltage
Drain-Source Voltage -30
Pulsed Drain Current
C
-25
-20
-60
V
V±20
25
A
-14
30
50
°C
AOD417
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -30V
I
D
= -25A (V
GS
= -10V)
R
DS(ON)
< 34mΩ (V
GS
= -10V)
R
DS(ON)
< 55mΩ (V
GS
= -4.5V)
100% UIS Tested!
100% Rg Tested!
General Description
The AOD417 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications.
-RoHS Compliant
-Halogen Free*
G
D
S
G
D-PAK
Top View
S
Bottom View
D
G
S
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOD417
Symbol Min Typ Max Units
BV
DSS
-30 V
-1
T
J
=55°C -5
I
GSS
±100 nA
V
GS(th)
-1 -1.9 -3 V
I
D(ON)
-60 A
27 34
T
J
=125°C 36
40 55 mΩ
g
FS
18 S
V
SD
-0.75 -1 V
I
S
-6 A
C
iss
920 pF
C
oss
140 pF
C
rss
90 pF
R
g
6 9 Ω
Q
g
(10V) 16.2 nC
Q
g
(4.5V) 8.2 nC
Q
gs
2.9 nC
Q
gd
3.6 nC
t
D(on)
8 ns
t
r
30 ns
t
D(off)
22 ns
t
f
26 ns
t
rr
23 ns
Q
rr
14 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=-15V, f=1MHz
Gate Drain Charge
Total Gate Charge (10V)
V
GS
=-10V, V
DS
=-15V, I
D
=-20A
Turn-On Rise Time
Turn-Off DelayTime V
GS
=-10V, V
DS
=-15V, R
L
=0.75Ω,
R
GEN
=0.75Ω
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge (4.5V)
Gate Source Charge
mΩ
V
GS
=-4.5V, I
D
=-7A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-20A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
µA
Gate Threshold Voltage V
DS
=V
GS
I
D
=-250µA
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-20A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250µA, V
GS
=0V
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-20A
Reverse Transfer Capacitance
I
F
=-20A, dI/dt=100A/µs
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
TA =25°C. The Power dissipation P DSM is based on R θJA (<10s) and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev1: Sep. 2008
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOD417
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
I
D
=-10mA, V
GS
=0V
850
185
90
0
10
20
30
40
50
60
0 1 2 3 4 5
-V
DS
(Volts)
Figure 1: On-Region Characteristics
-I
D
(A)
V
GS
=-3.5V
-6V
-4.5V
-10V
0
5
10
15
20
25
1 1.5 2 2.5 3 3.5 4 4.5 5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A)
20
25
30
35
40
45
50
55
60
0 5 10 15 20 25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
(mΩ
Ω
Ω
Ω)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A)
25°C
125°C
-40°C
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
V
GS
=-10V
I
D
=-20A
V
GS
=-4.5V
I
D
=-7A
20
30
40
50
60
70
80
345678910
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(ON)
(mΩ
Ω
Ω
Ω)
25°C
125°C
V
DS
=-5V
V
GS
=-4.5V
V
GS
=-10V
25°C
125°C
I
D
=-20A
-40°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOD417
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
I
D
=-10mA, V
GS
=0V
850
185
90
0
2
4
6
8
10
0 3 6 9 12 15 18
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(Volts)
0
250
500
750
1000
1250
1500
0 5 10 15 20 25 30
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
θ
θ
θJC
Normalized Transient
Thermal Resistance
C
oss
C
rss
V
DS
=-15V
I
D
=-20A
Single Pulse
D=T
on
/T
T
J,PK
=T
c
+P
DM
.Z
θJC
.R
θJC
R
θJC
=3°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175°C
T
C
=25°C
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
V
DS
(Volts)
I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10µs
DC
R
DS(ON)
limited
T
J(Max)
=175°C
T
C
=25°C
100
µ
s
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOD417
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
I
D
=-10mA, V
GS
=0V
850
185
90
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=50°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
20
40
60
80
100
120
0.000001 0.00001 0.0001 0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
-I
D
(A), Peak Avalanche Current
0
10
20
30
40
50
60
0 25 50 75 100 125 150 175
T
CASE
(°C)
Figure 13: Power De-rating (Note B)
Power Dissipation (W)
0
5
10
15
20
25
30
0 25 50 75 100 125 150 175
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
Current rating
T
A
=25°C
0
10
20
30
40
50
60
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Power (W)
T
A
=25°C
T
A
=150°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOD417
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
Vdd
Vgs
Id
Vgs
Rg
DUT
VDC
Vgs
Vds
Id
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds L
-
+
2
E = 1/2 LI
AR
AR
BV
DSS
I
AR
Ig
Vgs -
+
VDC
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
-Isd
-Vds
F
-I
-I
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
tt
t
90%
10%
r
on
d(off) f
off
d(on)
Alpha & Omega Semiconductor, Ltd. www.aosmd.com